ISC 2SC2270

Inchange Semiconductor
Product Specification
2SC2270
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-126 package
·Low collector saturation voltage
·High collector power dissipation
APPLICATIONS
·Strobo flash applications
·Medimum power amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
50
V
VCEO
Collector-emitter voltage
Open base
20
V
VEBO
Emitter-base voltage
Open collector
8
V
IC
Collector current (DC)
5
A
ICM
Collector current-peak
8
A
IE
Emitter current (DC)
-5
A
IEM
Emitter current-peak
-8
A
PC
Total power dissipation
Ta=25℃
1.0
TC=25℃
10
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC2270
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
20
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
8
V
Collector-emitter saturation voltage
IC=4A; IB=0.1A
1.0
V
VBE
Base-emitter voltage
IC=4A ; VCE=2V
1.5
V
ICBO
Collector cut-off current
VCB=40V; IE=0
0.1
μA
IEBO
Emitter cut-off current
VEB=8V; IC=0
0.1
μA
hFE-1
DC current gain
IC=0.5A ; VCE=2V
140
hFE-2
DC current gain
IC=4A ; VCE=2V
70
Transition frequency
IC=0.5A ; VCE=2V
100
MHz
Collector output capacitance
IE=0;f=1MHz ; VCB=10V
40
pF
VCEsat
fT
COB
‹
CONDITIONS
hFE-1 Classifications
A
B
C
140-240
200-330
300-450
2
MIN
TYP.
MAX
UNIT
450
Inchange Semiconductor
Product Specification
2SC2270
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3