TSUS5400, TSUS5401, TSUS5402 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • • • • • • • • • • • 94 8390 DESCRIPTION Package type: leaded Package form: T-1¾ Dimensions (in mm): Ø 5 Leads with stand-off Peak wavelength: λp = 950 nm High reliability Angle of half intensity: ϕ = ± 22° Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 TSUS5400 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package. APPLICATIONS • Infrared remote control and free air transmission systems with low forward voltage and small package requirements • Emitter in transmissive sensors • Emitter in reflective sensors PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 14 17 20 ± 22 ± 22 ± 22 950 950 950 800 800 800 TSUS5400 TSUS5401 TSUS5402 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSUS5400 TSUS5401 TSUS5402 PACKAGING REMARKS PACKAGE FORM Bulk Bulk Bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ T-1¾ T-1¾ Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Rev. 1.8, 24-Aug-11 TEST CONDITION tp/T = 0.5, tp = 100 μs tp = 100 μs t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB SYMBOL VALUE UNIT VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA 5 150 300 2.5 170 100 - 40 to + 85 - 40 to + 100 260 230 V mA mA A mW °C °C °C °C K/W Document Number: 81056 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSUS5400, TSUS5401, TSUS5402 www.vishay.com Vishay Semiconductors 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 230 K/W 80 60 40 20 100 80 60 RthJA = 230 K/W 40 20 0 0 10 21313 20 30 40 50 60 70 80 90 0 100 0 Tamb - Ambient Temperature (°C) 21314 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TEST CONDITION SYMBOL TYP. MAX. UNIT IF = 100 mA, tp = 20 ms VF 1.3 1.7 V IF = 100 mA TKVF - 1.3 VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj 30 pF IF = 20 mA TKφe - 0.8 %/K ϕ ± 22 deg Peak wavelength IF = 100 mA λp 950 nm Spectral bandwidth IF = 100 mA Δλ 50 nm Temperature coefficient of λp IF = 100 mA TKλp 0.2 nm/K IF = 100 mA tr 800 ns IF = 1.5 A tr 400 ns IF = 100 mA tf 800 ns IF = 1.5 A tf 400 ns d 2.9 mm PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Temperature coefficient of φe Angle of half intensity Rise time Fall time Virtual source diameter MIN. mV/K 100 μA TYPE DEDICATED CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage TEST CONDITION IF = 1.5 A, tp = 100 μs IF = 100 mA, tp = 20 ms Radiant intensity IF = 1.5 A, tp = 100 μs Radiant power Rev. 1.8, 24-Aug-11 IF = 100 mA, tp = 20 ms PART SYMBOL TYP. MAX. UNIT TSUS5400 VF MIN. 2.2 3.4 V TSUS5401 VF 2.2 3.4 V TSUS5402 VF 2.2 2.7 V TSUS5400 Ie 7 14 35 mW/sr TSUS5401 Ie 10 17 35 mW/sr TSUS5402 Ie 15 20 35 TSUS5400 Ie 60 140 TSUS5401 Ie 85 160 mW/sr TSUS5402 Ie 120 190 mW/sr mW/sr mW/sr TSUS5400 φe 13 mW TSUS5401 φe 14 mW TSUS5402 φe 15 mW Document Number: 81056 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSUS5400, TSUS5401, TSUS5402 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 Ie - Radiant Intensity (mW/sr) I F - Forward Current (A) 10 1 I FSM = 2.5 A ( Single Pulse ) tp/T = 0.01 10 0 0.05 0.1 0.5 1.0 10 -1 -2 10 94 7989 TSUS 5401 TSUS 5402 100 TSUS5400 10 1 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 0 10 2 10 1 10 2 10 3 I F - Forward Current (mA) 94 7997 Fig. 3 - Pulse Forward Current vs. Pulse Duration 10 4 Fig. 6 - Radiant Intensity vs. Forward Current 10 4 Φ - Radiant Power (mW) e I F - Forward Current (mA) 1000 10 3 10 2 10 1 10 0 10 -1 0 1 2 3 4 TSUS 5402 100 TSUS5400 10 1 0.1 V F - Forward Voltage (V) 94 7996 10 0 10 1 10 2 10 3 I F - Forward Current (mA) 94 7998 10 4 Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Radiant Power vs. Forward Current 1.6 1.1 IF = 10 mA 1.2 1.0 Ie rel; Φe rel VF rel - Relative Forward Voltage (V) 1.2 0.9 IF = 20 mA 0.8 0.8 0.4 0.7 0 94 7990 20 40 60 80 100 Tamb - Ambient Temperature (°C) 0 - 10 0 10 94 7993 50 100 140 T amb - Ambient Temperature (°C) Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature Rev. 1.8, 24-Aug-11 Document Number: 81056 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSUS5400, TSUS5401, TSUS5402 www.vishay.com Vishay Semiconductors 0° I e rel - Relative Radiant Intensity Φe rel - Relative Radiant Power 1.25 1.0 0.75 0.5 0.25 10° 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 IF = 100 mA 0 900 80° 0.6 1000 950 λ - Wavelength (nm) 94 7994 0.4 0.2 0 0.2 0.4 0.6 94 7999 Fig. 9 - Relative Radiant Power vs. Wavelength Fig. 10 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters C ± 0.15 A ± 0.15 7.7 < 0.7 ± 0.3 8.7 11.9 ± 0.3 (4.1) 5.8 R 2.49 (sphere) 34.9 ± 0.55 Area not plane ± 0.25 Ø 5 ± 0.15 1 min. 1.1 0.5 0.5 + 0.15 - 0.05 technical drawings according to DIN specifications + 0.15 - 0.05 2.54 nom. 6.544-5258.01-4 Issue: 5; 19.05.09 96 12119 Rev. 1.8, 24-Aug-11 Document Number: 81056 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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