VSMY99445DS www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, Surface Emitter Technology FEATURES • • • • • • • • • • DESCRIPTION As part of the SurfLightTM portfolio, the VSMY99445DS is an infrared, 940 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal resistance SMD package with lens. A 42 mil chip provides outstanding radiant intensity and allows DC operation of the device up to 1 A. Superior ESD characteristics are ensured by an integrated Zener diode. • • • • Package type: surface mount Double stack technology Package form: high power SMD with lens Dimensions (L x W x H in mm): 3.85 x 3.85 x 2.24 Peak wavelength: λp = 940 nm Zener diode for ESD protection up to 2 kV High radiant power High radiant intensity Angle of half intensity: ϕ = ± 45° Designed for high drive currents: up to 1 A (DC) and up to 5 A pulses Low thermal resistance: RthJP = 10 K/W Floor life: 168 h, MSL 3, acc. J-STD-020 Lead (Pb)-free reflow soldering Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Infrared illumination for CMOS cameras (CCTV) • Illumination for cameras (3D gaming) • Machine vision PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) VSMY99445DS 500 ± 45 940 15 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY99445DS Tape and reel MOQ: 600 pcs, 600 pcs/reel High power with lens Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 1 A A Peak forward current tp/T = 0.5, tp = 100 μs IFM 2 Surge forward current tp = 100 μs IFSM 5 A PV 3.4 W Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction / pin Rev. 1.0, 12-Feb-16 Tj 110 °C Tamb -40 to +85 °C °C Tstg -55 to +100 According to fig. 10, J-STD-20 Tsd 260 °C According to J-STD-051, soldered on PCB RthJP 10 K/W Document Number: 84249 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY99445DS www.vishay.com Vishay Semiconductors 1.0 3.5 IF - Forward Current (A) PV - Power Dissipation (W) 4.0 3.0 2.5 2.0 RthJA = 10 K/W 1.5 1.0 0.5 0 0.8 RthJA = 10 K/W 0.6 0.4 0.2 0 0 20 40 60 80 100 0 20 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 1 A, tp = 20 ms VF - 2.9 3.4 V IF = 5 A, tp = 100 μs VF - 4.6 - V Temperature coefficient of VF IF = 1 A TKVF - -2.5 - mV/K Reverse current VR = 5 V IR Radiant intensity Radiant power Temperature coefficient of φe Not designed for reverse operation μA IF = 1 A, tp = 20 ms Ie 320 500 900 mW/sr IF = 5 A, tp = 100 μs Ie - 2790 - mW/sr IF = 1 A, tp = 20 ms φe - 935 - mW IF = 1 A TKφe - -0.2 - %/K ϕ - ± 45 - deg Angle of half intensity Peak wavelength IF = 1 A λp 920 940 960 nm Spectral bandwidth IF = 1 A Δλ - 50 - nm Temperature coefficient of λp IF = 1 A TKλp - 0.3 - nm/K Rise time IF = 1 A tr - 15 - ns Fall time IF = 1 A tf - 18 - ns Rev. 1.0, 12-Feb-16 Document Number: 84249 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY99445DS www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 000 Ie - Radiant Intensity (mW/sr) IF - Forward Current (A) 10 tp = 100 μs 1 tp = 100 μs 1000 0.1 100 1 2 3 4 5 100 VF - Forward Voltage (V) IF = 1.0 A tp = 20 ms 3.20 3.00 2.80 2.60 0 20 40 60 80 Fig. 6 - Radiant Intensity vs. Forward Current Ie, rel - Relative Radiant Intensity (%) VF - Forward Voltage (V) 3.60 -60 -40 -20 110 IF = 1.0 A tp = 20 ms 105 100 95 90 85 80 100 -60 -40 -20 115 IF = 1.0 A tp = 20 ms 105 100 95 90 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Rev. 1.0, 12-Feb-16 20 40 60 80 100 Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature Ie, rel - Relative Radiant Intensity (%) VF, rel - Relative Forward Voltage (%) Fig. 4 - Forward Voltage vs. Ambient Temperature -60 -40 -20 0 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) 110 10 000 IF - Forward Current (mA) Fig. 3 - Forward Current vs. Forward Voltage 3.40 1000 100 IF = 1.0 A 90 80 70 60 50 40 30 20 10 0 800 850 900 950 1000 1050 λ - Wavelength (nm) Fig. 8 - Relative Radiant Intensity vs. Wavelength Document Number: 84249 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY99445DS www.vishay.com 10° 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 0.4 0.2 ϕ - Angular Displacement Ie, rel - Relative Radiant Intensity 0° Vishay Semiconductors 0 Fig. 9 - Relative Radiant Intensity vs. Angular Displacement TAPING DIMENSIONS in millimeters Notes • Empty component pockets sealed with top cover tape. • 7 inch reel - 600 pieces per reel. • The maximum number of consecutive missing lamps is two. • In accordance with ANSI/EIA 481-1-A-1994 specifications. 8.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05 Cathode Ø 1.50 + 0.10 1.75 ± 0.10 12.00 +- 0.30 0.10 5.50 ± 0.05 Ø 1.50 + 0.25 Rev. 1.0, 12-Feb-16 Document Number: 84249 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY99445DS www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters Notes • Tolerance is ± 0.10 mm (0.004") unless otherwise noted. • Specifications are subject to change without notice. Rev. 1.0, 12-Feb-16 Document Number: 84249 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY99445DS www.vishay.com SOLDER PROFILE Vishay Semiconductors DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. FLOOR LIFE Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 3, acc. to J-STD-020B DRYING Fig. 10 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 Rev. 1.0, 12-Feb-16 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Document Number: 84249 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000