VSMY7852X01 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: Little Star® • Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5 • Peak wavelength: λp = 850 nm 20783 • High reliability • High radiant power DESCRIPTION • High radiant intensity As part of the SurfLightTM portfolio, the VSMY7852X01 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal resistance Little Star package. A 20 mil chip provides outstanding low forward voltage and allows DC operation of the device up to 250 mA. • Angle of half intensity: ϕ = ± 60° • Low forward voltage • Designed for high drive currents: up to 250 mA DC and up to 1.5 A pulses • Low thermal resistance: RthJP = 15 K/W • Floor life: 1 year, MSL 2, acc. J-STD-020 APPLICATIONS • Lead (Pb)-free reflow soldering • Infrared illumination for CMOS cameras (CCTV) • AEC-Q101 qualified • Driver assistance systems • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 • Machine vision IR data transmission PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) VSMY7852X01 42 ± 60 850 8 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY7852X01-GS08 Tape and reel MOQ: 2000 pcs, 2000 pcs/reel Little Star Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5 V Forward current IF 250 mA mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 500 Surge forward current tp = 100 μs IFSM 1.5 A PV 500 mW Power dissipation Junction temperature Tj 125 °C Operating temperature range Tamb -40 to +100 °C Storage temperature range Tstg -40 to +100 °C Acc. figure 7, J-STD-20 Tsd 260 °C Acc. J-STD-051, soldered on PCB RthJP 15 K/W Soldering temperature Thermal resistance junction/pin Rev. 1.6, 07-Nov-14 Document Number: 81146 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY7852X01 Vishay Semiconductors 600 300 500 250 IF - Forward Current (mA) PV - Power Dissipation (mW) www.vishay.com 400 300 200 RthJP = 15 K/W 100 200 150 100 RthJP = 15 K/W 50 0 0 0 21779 20 40 60 80 100 120 0 Tamb - Ambient Temperature (°C) 20 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 40 60 80 100 120 Tamb - Ambient Temperature (°C) 21780 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage TEST CONDITION SYMBOL IF = 250 mA, tp = 20 ms VF MIN. TYP. MAX. UNIT 1.8 2.0 V IF = 1.5 A, tp = 100 μs VF 2.8 V Temperature coefficient of VF IF = 1 mA TKVF -1.5 mV/K Reverse current VR = 5 V IR not designed for reverse operation μA Radiant intensity Radiant power Temperature coefficient of φe IF = 250 mA, tp = 20 ms Ie IF = 1.5 A, tp = 100 μs Ie 30 42 220 90 mW/sr mW/sr IF = 250 mA, tp = 20 ms φe 130 mW IF = 1 A TKφe -0.5 %/K ϕ ± 60 deg Angle of half intensity Peak wavelength IF = 250 mA λp 850 nm Spectral bandwidth IF = 250 mA Δλ 30 nm Temperature coefficient of λp IF = 250 mA TKλp 0.2 nm/K Rise time IF = 250 mA tr 8 ns Fall time IF = 250 mA tf 10 ns Rev. 1.6, 07-Nov-14 Document Number: 81146 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY7852X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 Φe, rel - Relative Radiant Power 1 1 0.1 0.01 0.001 0 0.5 1 1.5 2 2.5 0.5 0.25 0 650 3 VF - Forward Voltage (V) 21781 0.75 750 Fig. 3 - Forward Current vs. Forward Voltage 0° Ie, rel - Relative Radiant Intensity Ie - Radiant Intensity (mW/sr) 10° 20° 30° tp = 100 µs 100 10 1 0.1 0.001 0.01 0.1 1 40° 1.0 0.9 50° 0.8 60° 70° 0.7 10 IF - Forward Current (A) Fig. 4 - Radiant Intensity vs. Forward Current Rev. 1.6, 07-Nov-14 950 Fig. 5 - Relative Radiant Power vs. Wavelength 1000 21782 850 λ- Wavelength (nm) 21776 ϕ - Angular Displacement IF - Forward Current (A) tp = 100 µs 80° 0.6 0.4 0.2 0 948013-1 Fig. 6 - Relative Radiant Intensity vs. Angular Displacement Document Number: 81146 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY7852X01 www.vishay.com Vishay Semiconductors TAPING DIMENSIONS in millimeters 20846 Rev. 1.6, 07-Nov-14 Document Number: 81146 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY7852X01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 6 0.7 0.5 5.2 0.7 3 Ø 3.3 1.6 0.6 2.6 7 6 2.6 0.1 0.3 Anode marking Recommended solder pad Recommended area for heat sink connected with anode pad technical drawings according to DIN specifications 8.2 6.2 Not indicated tolerances ± 0.1 8.65 3 17.5 1.2 2 solder pad cathode solder pad anode contour of device Drawing-No.: 6.541-5076.01-4 Issue: 3; 22.10.14 Rev. 1.6, 07-Nov-14 19 Document Number: 81146 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY7852X01 www.vishay.com Vishay Semiconductors SOLDER PROFILE DRYPACK 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 200 FLOOR LIFE max. 30 s Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: max. 100 s Floor life: 1 year 150 max. 120 s Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 100 Conditions: Tamb < 30 °C, RH < 60 % max. ramp up 3 °C/s max. ramp down 6 °C/s 50 0 0 19841 50 100 150 200 250 300 Time (s) Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 for Preconditioning acc. to JEDEC®, Level 2 Rev. 1.6, 07-Nov-14 Moisture sensitivity level 2, acc. to J-STD-020B DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Document Number: 81146 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000