VEMT2023SLX01 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: surface mount • Package form: side view • Dimensions (L x W x H in mm): 2.3 x 2.55 x 2.3 • AEC-Q101 qualified • High radiant sensitivity • Daylight blocking filter matched with 830 nm to 950 nm IR emitters • Fast response times • Angle of half sensitivity: = ± 35° • Package matched with IR emitter series VSMB2943SLX01 • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 • Lead (Pb)-free reflow soldering DESCRIPTION VEMT2023SLX01 is a silicon NPN epitaxial planar phototransistor in a miniature side looking, surface mount package (SMD) with dome lens and daylight blocking filter. Filter bandwidth is matched with 830 nm to 950 nm IR emitters. • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Detector in automotive applications • Photo interrupters • Miniature switches • Counters • Encoders • Position sensors PRODUCT SUMMARY COMPONENT Ica (mA) (deg) 0.5 (nm) 2.7 ± 35 790 to 970 VEMT2023SLX01 Note • Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMT2023SLX01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel Side view Note • MOQ: minimum order quantity Rev. 1.0, 05-Apr-13 Document Number: 84166 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMT2023SLX01 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE UNIT Collector emitter voltage PARAMETER TEST CONDITION VCEO 20 V Emitter collector voltage VECO 7 V IC 50 mA PV 100 mW Tj 100 °C Tamb - 40 to + 100 °C °C Collector current Tamb 75 °C Power power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Tstg - 40 to + 100 Acc. reflow profile fig. 8 Tsd 260 °C Acc. J-STD-051 RthJA 250 K/W Thermal resistance junction/ambient PV - Power Dissipation (mW) 120 100 80 60 RthJA = 250 K/W 40 20 0 0 21619 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Collector emitter breakdown voltage Collector dark current Collector emitter capacitance Collector light current TEST CONDITION SYMBOL MIN. IC = 0.1 mA VCEO 20 TYP. UNIT V VCE = 5 V, E = 0 ICEO 1 VCE = 0 V, f = 1 MHz, E = 0 CCEO 25 Ee = 1 mW/cm2, = 950 nm, VCE = 5 V Ica 1.3 MAX. 2.7 100 nA pF 4.1 mA Angle of half sensitivity ± 35 Wavelength of peak sensitivity p 860 nm Range of spectral bandwidth 0.5 790 to 970 nm Collector emitter saturation voltage Temperature coefficient of Ica Rev. 1.0, 05-Apr-13 IC = 0.05 mA VCEsat Ee = 1 mW/cm2, = 950 nm, VCE = 5 V TkIca deg 0.4 1.1 V %/K Document Number: 84166 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMT2023SLX01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1 S(λ)rel - Relative Spectral Sensitivity IF = 0 1000 VCE = 70 V VCE = 25 V VCE = 5 V 100 10 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1 0 10 20594 20 30 40 50 60 70 80 0 600 650 700 750 800 850 900 950 1000 1050 1100 90 100 Tamb - Ambient Temperature (°C) λ - Wavelength (nm) 21574 Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 5 - Relative Spectral Sensitivity vs. Wavelength 0° Srel - Relative Radiant Sensitivity Ica - Collector Light Current (mA) 100 10 VCE = 5 V, λ = 950 nm 1 0.1 0.01 0.1 1 10 Fig. 3 - Collector Light Current vs. Irradiance 30° 1.0 0.9 50° 0.8 60° 70° 80° 0.4 0.2 0 Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement 100 80 RL = 100 Ω 70 60 50 40 tf 30 tr 20 10 0 0 20599 250 500 750 1000 1250 1500 1750 2000 IC - Collector Current (µA) Fig. 4 - Rise/Fall Time vs. Collector Current Rev. 1.0, 05-Apr-13 Ica rel - Relative Collector Current 2.0 90 tr/tf - Rise/Fall Time (µs) 20° 40° 0.7 0.6 Ee - Irradiance (mW/cm²) 10° ϕ - Angular Displacement ICE0 - Collector Dark Current (nA) 10 000 1.8 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm 1.6 1.4 1.2 1.0 0.8 0.6 0 94 8239 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 7 - Relative Collector Current vs. Ambient Temperature Document Number: 84166 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMT2023SLX01 www.vishay.com Vishay Semiconductors REFLOW SOLDER PROFILE DRYPACK 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 FLOOR LIFE 200 Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020. max. 30 s 150 max. 100 s max. 120 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 0 0 19841 50 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 100 150 200 250 300 Time (s) Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. PACKAGE DIMENSIONS VEMT2023SLX01 in millimeters Rev. 1.0, 05-Apr-13 Document Number: 84166 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMT2023SLX01 www.vishay.com Vishay Semiconductors TAPE AND REEL DIMENSIONS VEMT2023SLX01 in millimeters Reel Unreel direction Ø 13 ±0 .5 Ø 330 ± 1 0.5 5± Ø 62 ± 0.5 2. Tape position coming out from reel 3000 pcs / reel technical drawings according to DIN specifications Label posted here 12.4 ± 1.5 Leader and tailer tape: Empty (160 mm min.) Parts mounted Direction of pulling out 1.75 ± 0.1 Empty (400 mm min.) Terminal position in tape Lead II Cathode Rev. 1.0, 05-Apr-13 5.5 ± 0.05 Emitter Drawing refers to following types: Reel dimensions and tape X 2:1 Ø1.55 ± 0.05 I Anode +0.3 12 -0.1 Lead I Device VSMB2943SLX01 VSMF2893SLX01 Cathode VSMB2948SL VEMD2023SLX01 VEMD2523SLX01 VEMT2023SLX01 Collector VEMT2523SLX01 Anode VSMY2853SL 4 ±0.1 2 ± 0.05 8 ± 0.1 II 2.85± 0.1 see table Drawing-No.: 9.800-5123.01-4 Issue: 2; 19.02.13 Document Number: 84166 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000