VSMY1940ITX01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 940 nm, Surface Emitter Technology FEATURES • Package type: surface-mount • Package form: 0805 • Dimensions (L x W x H in mm): 2 x 1.25 x 0.85 • AEC-Q101 qualified • Enhanced operating temperature range: -40 °C to +105 °C • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity • High speed • Angle of half sensitivity: ϕ = ± 60° • Suitable for high pulse current operation DESCRIPTION As part of the SurfLightTM portfolio, the VSMY1940ITX01 is an infrared, 940 nm emitting diode based on GaAlAs surface emitter chip technology with high radiant intensity, high optical power and high speed, molded in clear, untinted 0805 plastic package for surface mounting (SMD). • 0805 standard surface-mountable package • Floor life: 72 h, MSL 4, according to J-STD-020 • Lead (Pb)-free reflow soldering • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Miniature light barrier • Photointerrupters • Optical switch • Emitter source for proximity sensors • Emitter for automotive applications (e.g. rain sensor) • IR flash • IR illumination PRODUCT SUMMARY COMPONENT VSMY1940ITX01 Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 10 ± 60 940 10 Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY1940ITX01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805 Note • MOQ: minimum order quantity Rev. 1.1, 13-Oct-15 Document Number: 84271 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY1940ITX01 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 5 V Reverse voltage Forward current IF 100 mA Peak forward current tp/T = 0.1, tp = 100 μs IFM 200 mA Surge forward current tp = 100 μs IFSM 1 A PV 180 mW Power dissipation Junction temperature Tj 110 °C Operating temperature range Tamb -40 to +105 °C Storage temperature range Tstg -40 to +110 °C According to figure 10, J-STD-020 Tsd 260 °C J-STD-051, soldered on PCB RthJA 250 K/W Soldering temperature Thermal resistance junction / ambient 120 180 IF - Forward Current (mA) PV - Power Dissipation (mW) 200 160 140 120 100 80 RthJA = 250 K/W 60 40 20 100 0 80 60 RthJA = 250 K/W 40 20 0 0 15 30 45 60 75 90 0 105 120 Tamb - Ambient Temperature (°C) 15 30 45 60 75 90 105 120 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 100 mA, tp = 20 ms VF - 1.45 1.8 V IF = 1 A, tp = 100 μs VF - 2.2 - V IF = 100 mA TKVF - -2 - mV/K Reverse current Junction capacitance IR VR = 0 V, f = 1 MHz, E = 0 mW/cm2 Not designed for reverse operation 125 - pF 5 10 15 mW/sr - 75 - mW/sr φe - 50 - mW IF = 100 mA TKφe - -0.2 - %/K ϕ - ± 60 - deg Peak wavelength IF = 100 mA λp 920 940 960 nm Spectral bandwidth IF = 100 mA Δλ - 40 - nm Temperature coefficient of λp IF = 30 mA TKλp - 0.25 - nm/K Rise time IF = 100 mA, 20 % to 80 % tr - 10 - ns Fall time IF = 100 mA, 20 % to 80 % tf - 10 - ns Radiant intensity Radiant power Temperature coefficient of radiant power CJ - IF = 100 mA, tp = 20 ms Ie IF = 1 A, tp = 100 μs Ie IF = 100 mA, tp = 20 ms μA Angle of half intensity Rev. 1.1, 13-Oct-15 Document Number: 84271 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY1940ITX01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 100 tp = 100 µs Ie - Radiant Intensity (mW/sr) IF - Forward Current (mA) tp = 100 µs 100 10 1 1.0 10 1 0.1 0.01 1.2 1.4 1.6 1.8 2.0 2.2 2.4 1 10 VF - Forward Voltage (V) Fig. 3 - Forward Current vs. Forward Voltage 130 Ie - Relative Radiant Intensity (%) IF = 100 mA VF - Forward Voltage (V) 1.60 1.55 1.50 1.45 1.40 1.35 -40 -20 0 20 40 60 80 110 100 90 80 70 -60 100 -20 0 20 40 60 80 100 Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature 112 1.0 IF = 100 mA 110 Ie - Relative Radiant Intensity (%) VF,rel - Relative Forward Voltage (%) -40 Tamb - Ambient Temperature (°C) Fig. 4 - Forward Voltage vs. Ambient Temperature 108 106 104 102 100 98 96 94 -40 -20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Rev. 1.1, 13-Oct-15 IF = 100 mA 120 Tamb - Ambient Temperature (°C) 92 -60 1000 Fig. 6 - Radiant Intensity vs. Forward Current 1.65 1.30 -60 100 IF - Forward Current (mA) 0.9 IF = 100 mA 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 800 850 900 950 1000 1050 λ - Wavelength (nm) Fig. 8 - Relative Radiant Intensity vs. Wavelength Document Number: 84271 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY1940ITX01 www.vishay.com Vishay Semiconductors DRYPACK 0° 10° Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 20° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement Ie, rel - Relative Radiant Intensity 30° 80° 0.6 0.4 0.2 0 948013-1 Fig. 9 - Relative Radiant Intensity vs. Angular Displacement FLOOR LIFE Time between soldering and removing from MBB must not exceed the time indicated in J-STD-020: Moisture sensitivity: level 4 Floor life: 72 h Conditions: Tamb < 30 °C, RH < 60 % DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. REFLOW SOLDER PROFILE 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 200 max. 30 s 150 max. 100 s max. 120 s 100 max. ramp down 6 °C/s 50 max. ramp up 3 °C/s 0 0 19841 50 100 150 200 250 300 Time (s) Fig. 10 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 Rev. 1.1, 13-Oct-15 Document Number: 84271 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY1940ITX01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters Bottom View Cathode Anode 1 technical drawings according to DIN specifications Not indicated tolerances ± 0.1 Side View 0.35 0.85 2 0.6 0.6 Recommended solder pad Footprint Top View 1 0.82 0.625 1.2 1.25 1 0.6 Drawing-No.: 6.541-5083.01-4 Issue: 1; 29.03.10 22111 Rev. 1.1, 13-Oct-15 Document Number: 84271 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY1940ITX01 www.vishay.com Vishay Semiconductors BLISTER TAPE DIMENSIONS in millimeters 4 Ø 1.55 ± 0.05 0.2 ± 0.05 2 ± 0.05 8 2.24 3.5 ± 0.05 1.75 Anode 0.94 Cathode 1.45 4 Ø 1.1 + 0.1 Not indicated tolerances ±0.1 Reel off direction Drawing-No.: 9.700-5352.01-4 Issue: 1; 13.04.10 technical drawings according to DIN specifications 22112 REEL DIMENSIONS in millimeters 8.4 +2.5 Ø 177.8 max. Ø 55 min. 8.4 +0.15 Z Form of the leave open of the wheel is supplier specific. 14.4 max. Ø 20.2 min. 1.5 min. Ø 13 - 0.2 + 0.5 Z 2:1 Drawing-No.: 9.800-5096.01-4 Issue: 2; 26.04.10 20875 Rev. 1.1, 13-Oct-15 technical drawings according to DIN specifications Document Number: 84271 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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