VSMF2893SLX01 High Speed Infrared Emitting Diode, 890

VSMF2893SLX01
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs, DH
FEATURES
• Package type: surface mount
• Package form: side view
• Dimensions (L x W x H in mm): 2.3 x 2.55 x 2.3
• AEC-Q101 qualified
• Peak wavelength: p = 890 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity:  = ± 25°
• Low forward voltage
• Suitable for high pulse current operation
• Package matches with detector VEMD2xx3SSLX01 and
VEMT2xx3SLX01 series
DESCRIPTION
VSMF2893SLX01 is an infrared, 890 nm, side looking
emitting diode in GaAlAs (DH) technology with high radiant
power and high speed, molded in clear, untinted plastic
package (with lens) for surface mounting (SMD).
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• IrDA compatible data transmission
• 3D TV
• IR touch panels
• Miniature light barrier
• Photointerrupters
• Optical switch
• Shaft encoders
• IR emitter source for proximity applications
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
 (deg)
p (nm)
tr (ns)
20
± 25
890
30
VSMF2893SLX01
Note
• Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VSMF2893SLX01
Tape and reel
MOQ: 3000 pcs, 3000 pcs/reel
Side view
Note
• MOQ: minimum order quantity



Rev. 1.0, 26-Feb-13
Document Number: 83483
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMF2893SLX01
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
VR
5
V
Reverse voltage
Forward current
IF
100
mA
Peak forward current
tp/T = 0.5, tp  100 μs
IFM
200
mA
Surge forward current
tp = 100 μs
IFSM
1
A
PV
160
mW
Power dissipation
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 85
°C
Storage temperature range
Tstg
- 40 to + 100
°C
Soldering temperature
Acc. figure 9, J-STD-020
Tsd
260
°C
Thermal resistance junction/ambient
J-STD-051, leads 7 mm,
soldered on PCB
RthJA
250
K/W
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
100
RthJA = 250 K/W
80
60
40
100
80
60
RthJA = 250 K/W
40
20
20
0
0
0
10
21343
20 30
40
50
60
70 80
90
100
0
Tamb - Ambient Temperature (°C)
10
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
21344
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERSITICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of VF
Reverse current
Junction capacitance
Radiant intensity
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 100 mA, tp = 20 ms
VF
1.25
1.4
1.6
V
IF = 1 A, tp = 100 μs
VF
2.3
V
IF = 1 mA
TKVF
- 1.8
mV/K
IF = 100 mA
TKVF
- 1.1
VR = 5 V
IR
VR = 0 V, f = 1 MHz, E = 0
mW/cm2
IF = 100 mA, tp = 20 ms
CJ
Ie
mV/K
10
μA
30
mW/sr
125
10
20
pF
IF = 1 A, tp = 100 μs
Ie
180
IF = 100 mA, tp = 20 ms
e
40
mW
IF = 100 mA
TKe
- 0.35
%/K
Peak wavelength
IF = 30 mA
p
Spectral bandwidth
IF = 30 mA

40
nm
Radiant power
Temperature coefficient of e

Angle of half intensity
Temperature coefficient of p
mW/sr
± 25
870
890
deg
910
nm
IF = 30 mA
TKp
0.25
nm/K
Rise time
IF = 100 mA, 20 % to 80 %
tr
30
ns
Fall time
IF = 100 mA, 20 % to 80 %
tf
30
ns
IDC = 70 mA, IAC = 30 mA pp
fc
12
MHz
Cut-off frequency
Rev. 1.0, 26-Feb-13
Document Number: 83483
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMF2893SLX01
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERSITICS (Tamb = 25 °C, unless otherwise specified)
1.25
Φe rel - Relative Radiant Power
100
tp = 100 µs
tp/T = 0.001
10
1.0
0.75
0.5
0.25
1
0
1
2
3
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 6 - Relative Radiant Power vs. Wavelength
0°
110
VF, rel - Relative Forward Voltage (%)
1000
900
λ - Wavelength (nm)
20082
VF - Forward Voltage (V)
18873_1
0
800
4
10°
20°
30°
Ie rel - Relative Radiant Intensity
108
106
104
102
IF = 100 mA
100
IF = 10 mA
98
tp = 20 ms
96
94
IF = 1 mA
92
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
IF - Forward Current (mA)
1000
80°
90
- 40
- 20
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
21443
0.6
0.4
0.2
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
1000
0.02
IF - Forward Current (mA)
Ie - Radiant Intensity (mW/sr)
tp = 100 µs
100
10
1
0.1
IF - Forward Current (A)
Fig. 5 - Radiant Intensity vs. Forward Current
Rev. 1.0, 26-Feb-13
0.05
0.1
0.2
0.5
100
0.01
0.01
Tamb < 50 °C
tp/T = 0.01
1000
0.1
0.001
0
22694
1
16031
0.1
1
10
100
tp - Pulse Duration (ms)
Fig. 8 - Pulse Forward Current vs. Pulse Duration
Document Number: 83483
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMF2893SLX01
www.vishay.com
Vishay Semiconductors
SOLDER PROFILE
DRYPACK
300
255 °C
240 °C
217 °C
250
Temperature (°C)
max. 260 °C
245 °C
FLOOR LIFE
200
max. 30 s
150
max. 100 s
max. 120 s
100
max. ramp up 3 °C/s max. ramp down 6 °C/s
50
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
DRYING
0
0
19841
50
100
150
200
250
300
Time (s)
Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
PACKAGE DIMENSIONS in millimeters: VSMF2893SLX01
Rev. 1.0, 26-Feb-13
Document Number: 83483
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMF2893SLX01
www.vishay.com
Vishay Semiconductors
TAPING AND REEL DIMENSIONS in millimeters: VSMF2893SLX01
Rev. 1.0, 26-Feb-13
Document Number: 83483
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000