VSMF2893SLX01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs, DH FEATURES • Package type: surface mount • Package form: side view • Dimensions (L x W x H in mm): 2.3 x 2.55 x 2.3 • AEC-Q101 qualified • Peak wavelength: p = 890 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: = ± 25° • Low forward voltage • Suitable for high pulse current operation • Package matches with detector VEMD2xx3SSLX01 and VEMT2xx3SLX01 series DESCRIPTION VSMF2893SLX01 is an infrared, 890 nm, side looking emitting diode in GaAlAs (DH) technology with high radiant power and high speed, molded in clear, untinted plastic package (with lens) for surface mounting (SMD). • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • IrDA compatible data transmission • 3D TV • IR touch panels • Miniature light barrier • Photointerrupters • Optical switch • Shaft encoders • IR emitter source for proximity applications PRODUCT SUMMARY COMPONENT Ie (mW/sr) (deg) p (nm) tr (ns) 20 ± 25 890 30 VSMF2893SLX01 Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMF2893SLX01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel Side view Note • MOQ: minimum order quantity Rev. 1.0, 26-Feb-13 Document Number: 83483 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMF2893SLX01 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 5 V Reverse voltage Forward current IF 100 mA Peak forward current tp/T = 0.5, tp 100 μs IFM 200 mA Surge forward current tp = 100 μs IFSM 1 A PV 160 mW Power dissipation Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature Acc. figure 9, J-STD-020 Tsd 260 °C Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 250 K/W 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 250 K/W 80 60 40 100 80 60 RthJA = 250 K/W 40 20 20 0 0 0 10 21343 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 10 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21344 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERSITICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 100 mA, tp = 20 ms VF 1.25 1.4 1.6 V IF = 1 A, tp = 100 μs VF 2.3 V IF = 1 mA TKVF - 1.8 mV/K IF = 100 mA TKVF - 1.1 VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 mW/cm2 IF = 100 mA, tp = 20 ms CJ Ie mV/K 10 μA 30 mW/sr 125 10 20 pF IF = 1 A, tp = 100 μs Ie 180 IF = 100 mA, tp = 20 ms e 40 mW IF = 100 mA TKe - 0.35 %/K Peak wavelength IF = 30 mA p Spectral bandwidth IF = 30 mA 40 nm Radiant power Temperature coefficient of e Angle of half intensity Temperature coefficient of p mW/sr ± 25 870 890 deg 910 nm IF = 30 mA TKp 0.25 nm/K Rise time IF = 100 mA, 20 % to 80 % tr 30 ns Fall time IF = 100 mA, 20 % to 80 % tf 30 ns IDC = 70 mA, IAC = 30 mA pp fc 12 MHz Cut-off frequency Rev. 1.0, 26-Feb-13 Document Number: 83483 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMF2893SLX01 www.vishay.com Vishay Semiconductors BASIC CHARACTERSITICS (Tamb = 25 °C, unless otherwise specified) 1.25 Φe rel - Relative Radiant Power 100 tp = 100 µs tp/T = 0.001 10 1.0 0.75 0.5 0.25 1 0 1 2 3 Fig. 3 - Forward Current vs. Forward Voltage Fig. 6 - Relative Radiant Power vs. Wavelength 0° 110 VF, rel - Relative Forward Voltage (%) 1000 900 λ - Wavelength (nm) 20082 VF - Forward Voltage (V) 18873_1 0 800 4 10° 20° 30° Ie rel - Relative Radiant Intensity 108 106 104 102 IF = 100 mA 100 IF = 10 mA 98 tp = 20 ms 96 94 IF = 1 mA 92 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement IF - Forward Current (mA) 1000 80° 90 - 40 - 20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) 21443 0.6 0.4 0.2 Fig. 4 - Relative Forward Voltage vs. Ambient Temperature Fig. 7 - Relative Radiant Intensity vs. Angular Displacement 1000 0.02 IF - Forward Current (mA) Ie - Radiant Intensity (mW/sr) tp = 100 µs 100 10 1 0.1 IF - Forward Current (A) Fig. 5 - Radiant Intensity vs. Forward Current Rev. 1.0, 26-Feb-13 0.05 0.1 0.2 0.5 100 0.01 0.01 Tamb < 50 °C tp/T = 0.01 1000 0.1 0.001 0 22694 1 16031 0.1 1 10 100 tp - Pulse Duration (ms) Fig. 8 - Pulse Forward Current vs. Pulse Duration Document Number: 83483 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMF2893SLX01 www.vishay.com Vishay Semiconductors SOLDER PROFILE DRYPACK 300 255 °C 240 °C 217 °C 250 Temperature (°C) max. 260 °C 245 °C FLOOR LIFE 200 max. 30 s 150 max. 100 s max. 120 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020. DRYING 0 0 19841 50 100 150 200 250 300 Time (s) Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. PACKAGE DIMENSIONS in millimeters: VSMF2893SLX01 Rev. 1.0, 26-Feb-13 Document Number: 83483 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMF2893SLX01 www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VSMF2893SLX01 Rev. 1.0, 26-Feb-13 Document Number: 83483 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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