VSMB14942 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW FEATURES • Package type: surface mount • Package form: side view • Dimensions (L x W x H in mm): 3.2 x 2.51 x 1.2 • Peak wavelength: p = 940 nm • High reliability • High radiant power • Very high radiant intensity • Angle of half intensity: = ± 16° • Suitable for high pulse current operation DESCRIPTION VSMB14942 is an infrared, 940 nm, side looking emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed, molded in clear, untinted PCB based package (with lens) for surface mounting (SMD). APPLICATIONS • Emitter for remote control • IR touch panels • Photointerrupters • Floor life: 168 h, MSL 3, according to J-STD-020 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 • Optical switch PRODUCT SUMMARY COMPONENT VSMB14942 Ie (mW/sr) (deg) p (nm) tr (ns) 26 ± 16 940 15 Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMB14942 Tape and reel MOQ: 1500 pcs, 1500 pcs/reel Side view Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE Reverse voltage VR 5 V Forward current IF 100 mA Surge forward current TEST CONDITION tp = 100 μs Power dissipation Junction temperature UNIT IFSM 1 A PV 160 mW °C Tj 100 Operating temperature range Tamb -40 to +85 °C Storage temperature range Tstg -40 to +100 °C Soldering temperature According fig. 10, J-STD-020 Tsd 260 °C Thermal resistance junction/ambient J-STD-051, soldered on PCB RthJA 400 K/W Rev. 1.2, 19-Nov-15 Document Number: 84223 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB14942 www.vishay.com Vishay Semiconductors 120 160 140 120 100 80 RthJA = 400 K/W 60 100 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 40 20 80 60 RthJA = 400 K/W 40 20 0 0 0 20 40 60 80 0 100 Tamb - Ambient Temperature (°C) 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF TEST CONDITION IF = 20 mA, tp = 20 ms IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs IF = 100 mA SYMBOL VF VF VF TKVF MIN. 1.0 - IR CJ Ie Ie Ie e TKe p TKp tr tf VR = 5 V Reverse current VR = 0 V, f = 1 MHz, E = 0 mW/cm2 IF = 20 mA, tp = 20 ms Radiant intensity IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs Radiant power IF = 70 mA, tp = 20 ms Temperature coefficient of radiant power IF = 20 mA Angle of half intensity Peak wavelength IF = 70 mA Spectral bandwidth IF = 30 mA Temperature coefficient of p IF = 30 mA Rise time IF = 100 mA, 20 % to 80 % Fall time IF = 100 mA, 20 % to 80 % Junction capacitance TYP. 1.18 1.28 1.83 -0.98 MAX. 1.4 1.6 - UNIT V V V mV/K - - 10 μA 2.8 920 - 116 5.5 27 210 28 -0.32 ± 16 940 30 0.30 15 15 8.5 960 - pF mW/sr mW/sr mW/sr mW %/K deg nm nm nm/K ns ns BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) tp = 100 μs 100 10 1 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 VF - Forward Voltage (V) Fig. 3 - Forward Current vs. Forward Voltage Rev. 1.2, 19-Nov-15 VF - Forward Voltage (V) IF - Forward Current (mA) 1000 1.60 1.55 1.50 1.45 1.40 1.35 1.30 1.25 1.20 1.15 1.10 1.05 1.00 IF = 100 mA tp = 20 ms -60 -40 -20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 4 - Forward Voltage vs. Ambient Temperature Document Number: 84223 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB14942 Vishay Semiconductors 115 Ie, rel - Relative Radiant Intensity (%) IF = 100 mA tp = 20 ms 110 105 100 95 90 -60 -40 -20 0 20 40 60 80 100 IF = 20 mA 90 80 70 60 50 40 30 20 10 0 100 800 850 900 Fig. 5 - Relative Forward Voltage vs. Ambient Temperature 0° Ie, rel - Relative Radiant Intensity Ie - Radiant Intensity (mW/sr) tp = 100 μs 100 10 1 0.1 100 1050 Fig. 8 - Relative Radiant Power vs. Wavelength 1000 10 1000 λ - Wavelength (nm) Tamb - Ambient Temperature (°C) 1 950 1000 10° 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 0.4 0.2 ϕ - Angular Displacement VF, rel - Relative Forward Voltage (%) www.vishay.com 0 IF - Forward Current (mA) Ie, rel - Relative Radiant Intensity (%) Fig. 6 - Radiant Intensity vs. Forward Current 120 115 110 105 100 95 90 85 80 75 70 65 60 Fig. 9 - Relative Radiant Intensity vs. Angular Displacement IF = 100 mA tp = 20 ms -60 -40 -20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature Rev. 1.2, 19-Nov-15 Document Number: 84223 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB14942 www.vishay.com Vishay Semiconductors SOLDER PROFILE DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Temperature 10 s max. 217 °C 200 °C 255 °C to 260 °C 3 °C/s max. FLOOR LIFE Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: 6 °C/s max. 150 °C Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % 3 °C/s max. 60 s to 120 s Moisture sensitivity level 3, according to J-STD-020. 60 s max. DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Time Fig. 10 - Lead (Pb)-free Reflow Solder Profile According to J-STD-020 PACKAGE DIMENSIONS in millimeters: VSMB14942 1.20 Molding body (lens) 0.60 PC board + 1.60 Soldering terminal 3.20 LED dice Cathode mask 0.60 Polarity 1.90 ± 0.15 2.51 ± 0.15 1.10 Not indicated tolerances ± 0.1 mm Recommended Solder Pad 1.5 (0.059) 5.0 (0.197) Rev. 1.2, 19-Nov-15 1.5 (0.059) Document Number: 84223 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB14942 www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VSMB14942 Rev. 1.2, 19-Nov-15 Document Number: 84223 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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