SEMiX453GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX® 3s Trench IGBT Modules SEMiX453GAR12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V 1350 A -20 ... 20 V 10 µs -40 ... 175 °C Tc = 25 °C 544 A Tc = 80 °C 407 A 450 A Tj = 150 °C Inverse diode IF Tj = 175 °C IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 1,0 RGoff,main = 1,0 RG,X = 2,2 RE,X = 0,5 IFRM IFRM = 3xIFnom 1350 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 2430 A -40 ... 175 °C Tc = 25 °C 544 A Tc = 80 °C 407 A 450 A Tj Freewheeling diode IF Tj = 175 °C IFnom IFRM IFRM = 3xIFnom 1350 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 2430 A -40 ... 175 °C Tj Module It(RMS) Tterminal = 80 °C Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 °C 4000 V Characteristics Symbol IGBT VCE(sat) VCE0 Conditions IC = 450 A VGE = 15 V chiplevel chiplevel min. typ. max. Unit Tj = 25 °C 1.8 2.05 V Tj = 150 °C 2.2 2.4 V Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V Tj = 25 °C 2.2 2.6 m 3.3 3.6 m 5.8 6.5 V 5 mA rCE VGE = 15 V chiplevel VGE(th) VGE=VCE, IC = 18 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V Tj = 150 °C 5 Tj = 25 °C Tj = 150 °C mA f = 1 MHz 27.9 nF f = 1 MHz 1.74 nF f = 1 MHz 1.53 nF QG VGE = - 8 V...+ 15 V 2550 nC RGint Tj = 25 °C 1.67 GAR © by SEMIKRON Rev. 2 – 03.07.2013 1 SEMiX453GAR12E4s Characteristics Symbol td(on) tr Eon td(off) tf Eoff SEMiX® 3s Trench IGBT Modules SEMiX453GAR12E4s Rth(j-c) rF • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 1,0 RGoff,main = 1,0 RG,X = 2,2 RE,X = 0,5 Qrr Err Rth(j-c) chiplevel IRRM Qrr Err Rth(j-c) typ. max. chiplevel Unit 336 ns Tj = 150 °C 80 ns Tj = 150 °C 45 mJ Tj = 150 °C 615 ns Tj = 150 °C 130 ns Tj = 150 °C 66.5 mJ 0.065 K/W Tj = 25 °C 2.1 2.46 V Tj = 150 °C 2.1 2.4 V V Tj = 25 °C 1.1 1.3 1.5 Tj = 150 °C 0.7 0.9 1.1 V Tj = 25 °C 1.4 1.9 2.1 m 2.2 2.6 2.8 m Tj = 150 °C IF = 450 A Tj = 150 °C di/dtoff = 5000 A/µs T = 150 °C j VGE = -15 V Tj = 150 °C VCC = 600 V per diode Freewheeling diode VF = VEC IF = 450 A VGE = 0 V chiplevel VF0 chiplevel rF min. Tj = 150 °C per IGBT Inverse diode VF = VEC IF = 450 A VGE = 0 V chiplevel VF0 chiplevel IRRM Features Conditions VCC = 600 V IC = 450 A VGE = ±15 V RG on = 1.9 RG off = 1.9 di/dton = 4000 A/µs di/dtoff = 5000 A/µs 350 A 70 µC 28 mJ 0.11 K/W Tj = 25 °C 2.1 2.46 V Tj = 150 °C 2.1 2.4 V V Tj = 25 °C 1.1 1.3 1.5 Tj = 150 °C 0.7 0.9 1.1 V Tj = 25 °C 1.4 1.9 2.1 m 2.6 2.8 m Tj = 150 °C IF = 450 A Tj = 150 °C di/dtoff = 5000 A/µs T = 150 °C j VGE = -15 V Tj = 150 °C VCC = 600 V per diode 2.2 350 A 70 µC 28 mJ 0.11 K/W Module LCE RCC'+EE' 20 res., terminal-chip Rth(c-s) per module Ms to heat sink (M5) TC = 25 °C 0.7 m TC = 125 °C 1 m 0.04 to terminals (M6) Mt nH K/W 3 5 2.5 5 Nm Nm Nm w 300 g Temperature Sensor R100 B100/125 Tc=100°C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2% K GAR 2 Rev. 2 – 03.07.2013 © by SEMIKRON SEMiX453GAR12E4s Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 2 – 03.07.2013 3 SEMiX453GAR12E4s Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 2 – 03.07.2013 © by SEMIKRON SEMiX453GAR12E4s SEMiX 3s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 2 – 03.07.2013 5