datasheet

SEMiX603GB12E4Ip
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
1200
V
Tc = 25 °C
1110
A
Tc = 80 °C
853
A
600
A
ICnom
ICRM
SEMiX® 3p shunt
VGES
tpsc
Trench IGBT Modules
Tj
SEMiX603GB12E4Ip
IF
ICRM = 3xICnom
VCC = 800 V
VGE ≤ 20 V
VCES ≤ 1200 V
Tj = 150 °C
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• Press-fit pins as auxiliary contacts
• Thermally optimized ceramic
• Current sensing shunt resistor
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Renewable energy systems
Remarks
• Product reliability results are valid for
Tj=150°C
• Visol between temperature sensor and
power section is only 2500V
VRRM
Tj = 25 °C
10
µs
-40 ... 175
°C
Tj = 175 °C
1200
V
856
A
Tc = 80 °C
640
A
IFRM = 3xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
600
A
1800
A
3456
A
-40 ... 175
°C
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
407
A
-40 ... 125
°C
4000
V
Characteristics
Symbol
IGBT
VCE(sat)
VCE0
rCE
Conditions
IC = 600 A
VGE = 15 V
chiplevel
chiplevel
VGE = 15 V
chiplevel
min.
typ.
max.
Unit
Tj = 25 °C
1.80
2.05
V
Tj = 150 °C
2.03
2.30
V
Tj = 25 °C
0.87
1.01
V
Tj = 150 °C
0.77
0.9
V
Tj = 25 °C
1.6
1.7
mΩ
Tj = 150 °C
2.1
2.3
mΩ
5.8
6.3
V
5
mA
VGE(th)
VGE=VCE, IC = 22.2 mA
ICES
VGE = 0 V
VCE = 1200 V
Coes
Cres
VCE = 25 V
VGE = 0 V
5.3
Tj = 25 °C
Tj = 150 °C
mA
f = 1 MHz
37.5
nF
f = 1 MHz
2.31
nF
f = 1 MHz
2.04
nF
QG
VGE = - 8 V...+ 15 V
3450
nC
RGint
1.17
Ω
Rth(j-c)
Tj = 25 °C
VCC = 600 V
IC = 600 A
VGE = +15/-15 V
RG on = 1.5 Ω
RG off = 1.5 Ω
di/dton = 6800 A/µs
di/dtoff = 3700 A/µs
du/dt = 3400 V/µs
Ls = 21 nH
per IGBT
Rth(c-s)
per IGBT (λgrease=0.81 W/(m*K))
0.035
K/W
Rth(c-s)
per IGBT, pre-applied phase change
material
0.025
K/W
td(on)
tr
Eon
td(off)
tf
Eoff
© by SEMIKRON
V
Tc = 25 °C
IFRM
Cies
GB + shunt
A
Inverse diode
IFnom
Features
1800
-20 ... 20
Tj = 150 °C
260
ns
Tj = 150 °C
85
ns
Tj = 150 °C
63
mJ
Tj = 150 °C
560
ns
Tj = 150 °C
145
ns
Tj = 150 °C
80
mJ
Rev. 4.0 – 27.05.2015
0.037
K/W
1
SEMiX603GB12E4Ip
Characteristics
Symbol
Conditions
Inverse diode
VF = VEC IF = 600 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
SEMiX® 3p shunt
Trench IGBT Modules
SEMiX603GB12E4Ip
chiplevel
min.
Tj = 25 °C
Tj = 150 °C
typ.
max.
Unit
2.08
2.44
V
2.08
2.34
V
Tj = 25 °C
1.1
1.39
1.59
V
Tj = 150 °C
0.7
1.08
1.18
V
1.2
1.4
mΩ
1.7
1.9
mΩ
Tj = 25 °C
Rth(j-c)
Tj = 150 °C
IF = 600 A
Tj = 150 °C
di/dtoff = 6500 A/µs T = 150 °C
j
VGE = -15 V
T
j = 150 °C
VCC = 600 V
per diode
Rth(c-s)
per diode (λgrease=0.81 W/(m*K))
0.039
K/W
Rth(c-s)
per diode, pre-applied phase change
material
0.031
K/W
IRRM
Qrr
Err
465
A
108
µC
40
mJ
0.065
K/W
Module
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• Press-fit pins as auxiliary contacts
• Thermally optimized ceramic
• Current sensing shunt resistor
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Renewable energy systems
LCE
RCC'+EE'
Rth(c-s)1
Rth(c-s)2
Rth(c-s)2
Ms
res. terminal-chip, TC = 25 °C
shunt excluded
TC = 125 °C
calculated without thermal coupling
including thermal coupling,
Ts underneath module (λgrease=0.81 W/
(m*K))
including thermal coupling,
Ts underneath module, pre-applied
phase change material
to heat sink (M5)
to terminals (M6)
Mt
20
nH
1.2
mΩ
1.65
mΩ
0.009
K/W
0.015
K/W
0.011
K/W
3
6
Nm
3
6
Nm
Nm
w
Remarks
• Product reliability results are valid for
Tj=150°C
• Visol between temperature sensor and
power section is only 2500V
350
g
Temperature Sensor
R100
B100/125
Tc=100°C (R25=5 kΩ)
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
493 ± 5%
Ω
3550
±2%
K
Characteristics
Symbol
Shunt
IShunt
RShunt
Conditions
Tc = 100 °C, TShunt,max = 170 °C,
Rth = 2.3 K/W
Tolerance = ±5 %
α
min.
typ.
max.
Unit
407
A
75
ppm/K
0.19
mΩ
GB + shunt
2
Rev. 4.0 – 27.05.2015
© by SEMIKRON
SEMiX603GB12E4Ip
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 4.0 – 27.05.2015
3
SEMiX603GB12E4Ip
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 4.0 – 27.05.2015
© by SEMIKRON
SEMiX603GB12E4Ip
SEMiX 3p shunt
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 4.0 – 27.05.2015
5