SEMiX603GB12E4Ip Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 1110 A Tc = 80 °C 853 A 600 A ICnom ICRM SEMiX® 3p shunt VGES tpsc Trench IGBT Modules Tj SEMiX603GB12E4Ip IF ICRM = 3xICnom VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 150 °C • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • Press-fit pins as auxiliary contacts • Thermally optimized ceramic • Current sensing shunt resistor • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Renewable energy systems Remarks • Product reliability results are valid for Tj=150°C • Visol between temperature sensor and power section is only 2500V VRRM Tj = 25 °C 10 µs -40 ... 175 °C Tj = 175 °C 1200 V 856 A Tc = 80 °C 640 A IFRM = 3xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj 600 A 1800 A 3456 A -40 ... 175 °C Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min 407 A -40 ... 125 °C 4000 V Characteristics Symbol IGBT VCE(sat) VCE0 rCE Conditions IC = 600 A VGE = 15 V chiplevel chiplevel VGE = 15 V chiplevel min. typ. max. Unit Tj = 25 °C 1.80 2.05 V Tj = 150 °C 2.03 2.30 V Tj = 25 °C 0.87 1.01 V Tj = 150 °C 0.77 0.9 V Tj = 25 °C 1.6 1.7 mΩ Tj = 150 °C 2.1 2.3 mΩ 5.8 6.3 V 5 mA VGE(th) VGE=VCE, IC = 22.2 mA ICES VGE = 0 V VCE = 1200 V Coes Cres VCE = 25 V VGE = 0 V 5.3 Tj = 25 °C Tj = 150 °C mA f = 1 MHz 37.5 nF f = 1 MHz 2.31 nF f = 1 MHz 2.04 nF QG VGE = - 8 V...+ 15 V 3450 nC RGint 1.17 Ω Rth(j-c) Tj = 25 °C VCC = 600 V IC = 600 A VGE = +15/-15 V RG on = 1.5 Ω RG off = 1.5 Ω di/dton = 6800 A/µs di/dtoff = 3700 A/µs du/dt = 3400 V/µs Ls = 21 nH per IGBT Rth(c-s) per IGBT (λgrease=0.81 W/(m*K)) 0.035 K/W Rth(c-s) per IGBT, pre-applied phase change material 0.025 K/W td(on) tr Eon td(off) tf Eoff © by SEMIKRON V Tc = 25 °C IFRM Cies GB + shunt A Inverse diode IFnom Features 1800 -20 ... 20 Tj = 150 °C 260 ns Tj = 150 °C 85 ns Tj = 150 °C 63 mJ Tj = 150 °C 560 ns Tj = 150 °C 145 ns Tj = 150 °C 80 mJ Rev. 4.0 – 27.05.2015 0.037 K/W 1 SEMiX603GB12E4Ip Characteristics Symbol Conditions Inverse diode VF = VEC IF = 600 A VGE = 0 V chiplevel VF0 chiplevel rF SEMiX® 3p shunt Trench IGBT Modules SEMiX603GB12E4Ip chiplevel min. Tj = 25 °C Tj = 150 °C typ. max. Unit 2.08 2.44 V 2.08 2.34 V Tj = 25 °C 1.1 1.39 1.59 V Tj = 150 °C 0.7 1.08 1.18 V 1.2 1.4 mΩ 1.7 1.9 mΩ Tj = 25 °C Rth(j-c) Tj = 150 °C IF = 600 A Tj = 150 °C di/dtoff = 6500 A/µs T = 150 °C j VGE = -15 V T j = 150 °C VCC = 600 V per diode Rth(c-s) per diode (λgrease=0.81 W/(m*K)) 0.039 K/W Rth(c-s) per diode, pre-applied phase change material 0.031 K/W IRRM Qrr Err 465 A 108 µC 40 mJ 0.065 K/W Module Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • Press-fit pins as auxiliary contacts • Thermally optimized ceramic • Current sensing shunt resistor • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Renewable energy systems LCE RCC'+EE' Rth(c-s)1 Rth(c-s)2 Rth(c-s)2 Ms res. terminal-chip, TC = 25 °C shunt excluded TC = 125 °C calculated without thermal coupling including thermal coupling, Ts underneath module (λgrease=0.81 W/ (m*K)) including thermal coupling, Ts underneath module, pre-applied phase change material to heat sink (M5) to terminals (M6) Mt 20 nH 1.2 mΩ 1.65 mΩ 0.009 K/W 0.015 K/W 0.011 K/W 3 6 Nm 3 6 Nm Nm w Remarks • Product reliability results are valid for Tj=150°C • Visol between temperature sensor and power section is only 2500V 350 g Temperature Sensor R100 B100/125 Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% Ω 3550 ±2% K Characteristics Symbol Shunt IShunt RShunt Conditions Tc = 100 °C, TShunt,max = 170 °C, Rth = 2.3 K/W Tolerance = ±5 % α min. typ. max. Unit 407 A 75 ppm/K 0.19 mΩ GB + shunt 2 Rev. 4.0 – 27.05.2015 © by SEMIKRON SEMiX603GB12E4Ip Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 4.0 – 27.05.2015 3 SEMiX603GB12E4Ip Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 4.0 – 27.05.2015 © by SEMIKRON SEMiX603GB12E4Ip SEMiX 3p shunt pinout This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 4.0 – 27.05.2015 5