datasheet

SEMiX453GB17E4p
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
1700
V
Tc = 25 °C
731
A
Tc = 80 °C
555
A
450
A
ICnom
ICRM
SEMiX® 3p
VGES
tpsc
Tj
ICRM = 3xICnom
VCC = 1000 V
VGE ≤ 15 V
VCES ≤ 1700 V
Tj = 150 °C
1350
A
-20 ... 20
V
10
µs
-40 ... 175
°C
Inverse diode
SEMiX453GB17E4p
VRRM
IF
Tj = 25 °C
Tj = 175 °C
1700
V
Tc = 25 °C
557
A
Tc = 80 °C
412
A
450
A
IFnom
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• Press-fit pins as auxiliary contacts
• UL recognized, file no. E63532
Typical Applications*
IFRM
IFRM = 2xIFnom
900
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
2565
A
-40 ... 175
°C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
• AC inverter drives
• UPS
• Renewable energy systems
Characteristics
Remarks
IGBT
• Product reliability results are valid for
Tj=150°C
• Visol between temperature sensor and
power section is only 2500V
Symbol
VCE(sat)
VCE0
rCE
chiplevel
VGE = 15 V
chiplevel
V
Unit
Tj = 25 °C
1.90
2.20
V
Tj = 150 °C
2.26
2.45
V
Tj = 25 °C
1.1
1.2
V
Tj = 150 °C
1
1.1
V
Tj = 25 °C
1.8
2.2
mΩ
Tj = 150 °C
2.8
3.0
mΩ
5.8
6.4
V
5
mA
VGE=VCE, IC = 18 mA
Cres
4000
max.
VGE = 0 V
VCE = 1700 V
VCE = 25 V
VGE = 0 V
A
°C
typ.
ICES
Coes
5.2
Tj = 25 °C
mA
f = 1 MHz
36.0
nF
f = 1 MHz
1.50
nF
f = 1 MHz
1.14
nF
QG
VGE = - 8 V...+ 15 V
3600
nC
RGint
1.67
Ω
Rth(j-c)
Tj = 25 °C
VCC = 900 V
IC = 450 A
VGE = +15/-15 V
RG on = 2.7 Ω
RG off = 2.7 Ω
di/dton = 4600 A/µs
di/dtoff = 2300 A/µs
du/dt = 3200 V/µs
Ls = 21 nH
per IGBT
Rth(c-s)
per IGBT (λgrease=0.81 W/(m*K))
0.029
K/W
Rth(c-s)
per IGBT, pre-applied phase change
material
0.02
K/W
td(on)
tr
Eon
td(off)
tf
Eoff
© by SEMIKRON
IC = 450 A
VGE = 15 V
chiplevel
min.
VGE(th)
Cies
GB
Conditions
600
-40 ... 125
Tj = 150 °C
290
ns
Tj = 150 °C
90
ns
Tj = 150 °C
131
mJ
Tj = 150 °C
790
ns
Tj = 150 °C
175
ns
Tj = 150 °C
146
mJ
Rev. 1.0 – 27.08.2015
0.06
K/W
1
SEMiX453GB17E4p
Characteristics
Symbol
Conditions
Inverse diode
VF = VEC IF = 450 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
SEMiX® 3p
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
1.16
Tj = 150 °C
Tj = 25 °C
1.2
typ.
max.
Unit
1.98
2.37
V
2.11
2.52
V
1.32
1.56
V
1.08
1.22
V
1.5
1.8
mΩ
2.3
2.9
mΩ
Rth(j-c)
Tj = 150 °C
IF = 450 A
Tj = 150 °C
di/dtoff = 4850 A/µs T = 150 °C
j
VGE = -15 V
T
j = 150 °C
VCC = 900 V
per diode
Rth(c-s)
per diode (λgrease=0.81 W/(m*K))
0.048
K/W
Rth(c-s)
per diode, pre-applied phase change
material
0.038
K/W
IRRM
Qrr
Err
SEMiX453GB17E4p
chiplevel
min.
380
A
120
µC
72
mJ
0.1
K/W
Module
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• Press-fit pins as auxiliary contacts
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Renewable energy systems
Remarks
• Product reliability results are valid for
Tj=150°C
• Visol between temperature sensor and
power section is only 2500V
LCE
RCC'+EE'
Rth(c-s)1
Rth(c-s)2
Rth(c-s)2
Ms
res. terminal-chip
20
nH
TC = 25 °C
0.85
mΩ
TC = 150 °C
1.2
mΩ
0.009
K/W
0.014
K/W
0.011
K/W
calculated without thermal coupling
including thermal coupling,
Ts underneath module (λgrease=0.81 W/
(m*K))
including thermal coupling,
Ts underneath module, pre-applied
phase change material
to heat sink (M5)
to terminals (M6)
Mt
3
6
Nm
3
6
Nm
Nm
w
350
g
Temperature Sensor
R100
B100/125
Tc=100°C (R25=5 kΩ)
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
493 ± 5%
Ω
3550
±2%
K
GB
2
Rev. 1.0 – 27.08.2015
© by SEMIKRON
SEMiX453GB17E4p
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 1.0 – 27.08.2015
3
SEMiX453GB17E4p
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 1.0 – 27.08.2015
© by SEMIKRON
SEMiX453GB17E4p
SEMiX 3p
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 1.0 – 27.08.2015
5