datasheet

SKM200GBD126D
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 25 °C
Tj = 150 °C
1200
V
Tc = 25 °C
264
A
Tc = 80 °C
186
A
150
A
ICnom
ICRM
SEMITRANS® 3
Trench IGBT Modules
SKM200GBD126D
Preliminary Data
Features
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability, self limiting
to 6 x IC
• UL recognized, file no. E63532
Typical Applications*
• Current source inverter
Remarks
• The Fig.1 to Fig.9 are based on
measurements of the
SKM200GB126D
• The series diodes (FWD) have the data
of the inverse diodes of the
SKM300GB126D
VGES
tpsc
Tj
ICRM = 2xICnom
VCC = 900 V
VGE ≤ 15 V
VCES ≤ 1200 V
300
A
-20 ... 20
V
10
µs
-40 ... 150
°C
Tc = 25 °C
34
A
Tc = 80 °C
23
A
30
A
Tj = 125 °C
Inverse diode
IF
Tj = 150 °C
IFnom
IFRM
IFRM = 2xIFnom
60
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
414
A
-40 ... 150
°C
Tc = 25 °C
250
A
Tc = 80 °C
169
A
200
A
Tj
Freewheeling diode
IF
Tj = 150 °C
IFnom
IFRM
IFRM = 2xIFnom
400
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
1656
A
-40 ... 150
°C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50 Hz, t = 1 min
500
A
-40 ... 125
°C
4000
V
Characteristics
Symbol
IGBT
VCE(sat)
VCE0
Conditions
IC = 150 A
VGE = 15 V
chiplevel
chiplevel
rCE
VGE = 15 V
chiplevel
VGE(th)
VGE=VCE, IC = 6 mA
ICES
VGE = 0 V
VCE = 1200 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
QG
VGE = - 8 V...+ 20 V
RGint
Tj = 25 °C
min.
typ.
max.
Unit
Tj = 25 °C
1.71
2.10
V
Tj = 125 °C
2.00
2.45
V
Tj = 25 °C
1
1.2
V
Tj = 125 °C
0.9
1.1
V
Tj = 25 °C
4.7
6.0
mΩ
7.3
9.0
mΩ
5.8
6.5
V
2.0
mA
Tj = 125 °C
5
Tj = 25 °C
Tj = 125 °C
mA
f = 1 MHz
10.7
nF
f = 1 MHz
0.56
nF
f = 1 MHz
0.48
nF
1530
nC
5.0
Ω
GBD
© by SEMIKRON
Rev. 1.0 – 06.08.2015
1
SKM200GBD126D
Characteristics
Symbol
td(on)
tr
Eon
td(off)
tf
Conditions
VCC = 600 V
IC = 150 A
VGE = +15/-15 V
RG on = 1.5 Ω
RG off = 1.5 Ω
Eoff
SEMITRANS® 3
Rth(j-c)
SKM200GBD126D
Preliminary Data
rF
Features
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability, self limiting
to 6 x IC
• UL recognized, file no. E63532
Typical Applications*
• Current source inverter
Remarks
• The Fig.1 to Fig.9 are based on
measurements of the
SKM200GB126D
• The series diodes (FWD) have the data
of the inverse diodes of the
SKM300GB126D
IRRM
Qrr
Err
Rth(j-c)
chiplevel
IF = 15 A
di/dtoff = 150 A/µs
VGE = -15 V
VCC = 600 V
per diode
Freewheeling diode
VF = VEC IF = 200 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
IRRM
Qrr
Err
Rth(j-c)
typ.
chiplevel
max.
Unit
260
ns
Tj = 125 °C
40
ns
Tj = 125 °C
18
mJ
Tj = 125 °C
540
ns
Tj = 125 °C
110
ns
Tj = 125 °C
24
mJ
per IGBT
Inverse diode
VF = VEC IF = 30 A
VGE = 0 V
chiplevel
VF0
chiplevel
Trench IGBT Modules
min.
Tj = 125 °C
0.13
K/W
Tj = 25 °C
2.00
2.50
V
Tj = 125 °C
1.80
2.30
V
Tj = 25 °C
1.1
1.45
V
Tj = 125 °C
0.85
1.2
V
Tj = 25 °C
30
35
mΩ
37
mΩ
Tj = 125 °C
32
Tj = 125 °C
12
Tj = 125 °C
1
A
µC
Tj = 125 °C
mJ
1.5
K/W
Tj = 25 °C
1.60
1.80
V
Tj = 125 °C
1.60
1.80
V
Tj = 25 °C
1
1.1
V
Tj = 125 °C
0.8
0.9
V
Tj = 25 °C
3.0
3.5
mΩ
Tj = 125 °C
4.0
4.5
mΩ
IF = 200 A
Tj = 125 °C
di/dtoff = 6200 A/µs T = 125 °C
j
VGE = ±15 V
T
j = 125 °C
VCC = 600 V
per Diode
290
A
44
µC
18
mJ
15
nH
TC = 25 °C
0.35
mΩ
TC = 125 °C
0.5
mΩ
0.25
K/W
Module
LCE
RCC'+EE'
terminal-chip
Rth(c-s)
per module
Ms
to heat sink M6
Mt
0.02
to terminals M6
0.038
K/W
3
5
Nm
2.5
5
Nm
Nm
w
325
g
GBD
2
Rev. 1.0 – 06.08.2015
© by SEMIKRON
SKM200GBD126D
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 1.0 – 06.08.2015
3
SKM200GBD126D
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance of IGBT
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 10: Transient thermal impedance of FWD
Zthp(j-c)=f(tp): D=tp/tc=tp*f
Fig. 11: CAL diode forward characteristic
Fig. 12: Typ. CAL diode peak reverse recovery current
4
Rev. 1.0 – 06.08.2015
© by SEMIKRON
SKM200GBD126D
SEMITRANS 3
GBD
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 1.0 – 06.08.2015
5