UNISONIC TECHNOLOGIES CO., LTD 2N7002K Power MOSFET 300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UTC 2N7002K uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF) * ESD Protected * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Note: 2N7002KG-AE2-R Pin Assignment: G: Gate D: Drain Package SOT-23-3 S: Source 1 S Pin Assignment 2 3 G D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-541.D 2N7002K Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified.) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 60 V ±20 V Continuous 300 Drain Current ID mA Pulse(Note 2) 800 350 mW Power Dissipation PD Derating above TA=25°C 2.8 mW/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VDSS VGSS ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance (Note) SYMBOL TEST CONDITIONS MIN BVDSS IDSS IGSS VGS=0V, ID=10µA VDS=60V, VGS=0V VDS=0V, VGS=±20V 60 VGS(TH) VDS=10V, ID=1mA VGS=10V, ID=300m A VGS=4.5V, ID=200mA 1.0 RDS(ON) TYP MAX UNIT 1.0 ±10 DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) ID=0.2 A, VDD=30V, VGS=10V, RL=150Ω, RG=10Ω Turn-OFF Delay Time tD(OFF) DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS=0V, Is=300mA (Note ) Maximum Pulsed Drain-Source Diode ISM Forward Current Maximum Continuous Drain-Source Diode IS Forward Current 1.85 2.5 2 4 V µA µA V Ω 25 10 3.0 50 25 5.0 pF pF pF 12 20 20 30 ns ns 0.88 1.5 V 0.8 A 300 mA Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size. 2. Pulse width≦300μs, Duty cycle≦1% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R502-541.D 2N7002K Power MOSFET TEST CIRCUITS AND WAVEFORMS Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Switching Waveforms 3 of 4 QW-R502-541.D 2N7002K Power MOSFET TYPICAL CHARACTERISTICS Drain-Source Current, ID (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-541.D