Formosa MS ESD N-Channel SMD MOSFET 2N7002K List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................................................. 2,3 Rating and characteristic curves........................................................ 4,5 Pinning information........................................................................... 6 Marking........................................................................................... 6 Suggested solder pad layout............................................................. 6 Packing information.......................................................................... 7 Reel packing.................................................................................... 8 Suggested thermal profiles for soldering processes............................. 8 High reliability test capabilities........................................................... 9 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 1 Document ID Issued Date Revised Date DS-251105 2008/02/10 2010/05/10 Revision E Page. 9 Formosa MS ESD N-Channel SMD MOSFET 2N7002K 60V N-Channel Enhancement Mode MOSFET- ESD Protection Package outline Features 0.012 (0.30) 0.020 (0.50) .084(2.10) .068(1.70) 0.110 (2.80) 0.120 (3.04) solid-state relays drivers, relays, displays, lamps, solenoids, memories, etc. In compliance with EU RoHS 2002/95/EC directives. Suffix "-H" indicates Halogen-free part, ex. 2N7002K-H. (B) (C) (A) 0.063 (1.60) 0.027 (0.67) 0.013 (0.32) 0.047 (1.20) 0.108 (2.75) R 0.05 (0.002) Mechanical data 0.051 (1.30) 0.003 (0.09) 0.083 (2.10) 0.007 (0.18) • • 0.045 (1.15) • R DS(ON), V GS@10V, I D@500mA=3.0 Ω • R DS(ON), V [email protected], I D@200mA=4.0 Ω • ESD protection 2KV (Human body mode) • Advanced trench process technology. • High density cell design for ultra low on-resistance. • Very low leakage current in off condition • Specially designed for battery operated system, 0.034 (0.85) SOT-23 0.034 (0.89) • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOT-23 • Terminals : Solder plated, solderable per Dimensions in inches and (millimeters) MIL-STD-750, Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.0084 gram M aximum ratings (AT T A =25 oC unless otherwise noted) PARAMETER CONDITIONS Symbol Ratings UNIT Drain-Source voltage V DS 60 V Gate-source voltage V GS ±20 V Continuous drain current ID 300 mA I DM 2000 mA Pulsed drain current 1) PARAMETER CONDITIONS P D@T A= 25°C Total power dissipation Symbol MIN. TYP. Thermal resistance(PCB mounted) 2) W 0.21 T J , T STG Junction to ambient UNIT 0.35 PD P D@ T A=75°C Operation junction and storage temperature range MAX. o +150 -55 o 357 R θJA C C/W Note : 1. Maximum DC current limited by package 2. Surface mounted on FR4 board, t < 5 sec http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 2 Document ID Issued Date Revised Date DS-251105 2008/02/10 2010/05/10 Revision E Page. 9 Formosa MS ESD N-Channel SMD MOSFET 2N7002K Electrical characteristics (AT T =25 C unless otherwise noted) o A PARAMETER CONDITIONS Drain-source Breakdown Voltage Gate Threshold Voltage Symbol MIN. V GS = 0V, I D = 10µA BV DSS 60 V DS = V GS , I D = 250µA V GS(th) 1.0 TYP. MAX. V 2.5 V GS = 10V, I D = 500mA V 3.0 Drain-Source On-State Resistance Ω R DS(on) V GS = 4.5V, I D = 200mA 4.0 µA V DS = 60V, V GS = 0V I DSS 1 Gate-Body leakage Current V GS = +/-20V, V DS = 0V I GSS ±10 Forward TransConductance V DS = 15V, I D = 250mA g fS V DS = 15V, I D = 200mA V GS = 4.5V Qg 0.80 t on 20 t off 40 Zero Gate Voltage Drai n Current UNIT µA mS 100 DYNAMIC Total Gate Charge Turn-On Delay Time V DD = 30V, R L = 150Ω, I D = 200mA, V gen = 10V, R G = 10Ω Turn-Off Delay Time ns Input Capacitance V DS = 25V, V GS = 0V f = 1.0 MHz Output Capacitance nC Reverse Transfer Capacitance C iss 35 C oss 10 C rss 5 pF Source-Drain Diode Diode Forward Voltage V SD I S=200mA, V GS=0V Switching Test Circuit 0.82 Gate Charge Test Circuit V DD V DD RL V IN V GS V 1.3 RL V OUT D V GS D 1mA RG V GS DUT DUT G G RG S http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 S Page 3 Document ID Issued Date Revised Date DS-251105 2008/02/10 2010/05/10 Revision E Page. 9 Rating and characteristic curves (2N7002K) FIG.2 TRANSFER CHARACTERISTIC FIG.1 TYPICAL FORWARD CHARACTERISTIC 1.2 V GS = 6V~10V DRAIN TO SOURCE CURRENT,(A) DRAIN TO SOURCE CURRENT,(A) 1.2 5.0V 1.0 4.0V 0.8 0.6 0.4 3.0V 0.2 V DS = 10V 1.0 0.8 0.6 0.4 o 25 C 0.2 0 0 0 1 2 3 4 5 0 1 DRAIN TO SOURCE VOLTAGE, (V) 4 5 6 FIG.4 ON RESISTANCE VS GATE TO SOURCE VOLTAGE 5 5 4 4 ON-RESISTANCE, (ohm) ON-RESISTANCE, (ohm) 3 GATE TO SOURCE VOLTAGE, (V) FIG.3 ON RESISTANCE VS DRAIN CURRENT 3 V GS = 4.5V 2 2 1 3 I D = 500mA 2 I D = 200mA 1 V GS = 10V 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 2 3 4 5 6 7 8 9 10 GATE TO SOURCE VOLTAGE, (V) DRAIN current, (A) STATIC DRAIN-SOURCE ON-RESISTANCE , VDS(0N) (NORMALIZED) FIG.5 ON RESISTANCE VS JUNCTION TEMPERATURE 7.7 7.0 V GS = 10V 6.3 I D = 500mA 5.6 4.9 4.2 3.5 2.8 2.1 1.4 0.7 -60 -20 +20 +60 +100 +140 o JUNCTION TEMPERATURE, ( C) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 4 Document ID Issued Date Revised Date DS-251105 2008/02/10 2010/05/10 Revision E Page. 9 Rating and characteristic curves (2N7002K) FIG.7 GATE CHARGE FIG.6 GATE CHARGE WAVEFORM 10 Vgs Qsw Vgs(th) V DS = 10V GATE TO SOURCE VOLTAGE,(V) Qg 8 I D = 250mA 6 4 2 0 0 Qg(th) Qgs 0.2 0.6 0.8 1.0 GATE CHARGE, (nC) Qg Qgd 0.4 GATE CHARGE WAVEFORM FIG.8 THRESHOLD VOLTAGE VS TEMPERATURE FIG.9 BREAKDOWN VOLTAGE VS JUNCTION TEMPERATURE 90 V DS =V GS 88 1.10 I D = 10mA 86 BREAKDOWN VOLTAGE, (V) THRESHOLD VOLTAGE, (V) NORMALIZED 1.20 1.15 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 I D = 250uA 84 82 80 78 76 74 72 -60 -20 +20 +60 +100 +140 -50 o -25 0 25 50 75 100 125 150 o JUNCTION TEMPERATURE, ( C) JUNCTION TEMPERATURE, ( C) FIG.10 SOURCE-DRAIN DIODE FORWARD VOLTAGE 10 SOURCE CURRENT,(A) V GS = 0V 1 o 25 C o 125 C o -55 C 0.1 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 SOURCE TO DRAIN VOLTAGE, (V) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 5 Document ID Issued Date Revised Date DS-251105 2008/02/10 2010/05/10 Revision E Page. 9 Formosa MS ESD N-Channel SMD MOSFET 2N7002K Pinning information Pin Simplified outline Symbol D PinD PinG PinS Drain Drain Gate Source Gate G Source S Marking Type number Marking code 02KYM (Note 1) K72 2N7002K 7002K Note:1.YM indicate Date ode, Y= year code, 8=2008, 9=2009 M= week code, A~Z = 1st ~ 26th week a ~z= 27th ~ 52nd week . =53rd week Suggested solder pad layout SOT-23 0.037(0.95) 0.037(0.95) 0.079(2.0) 0.035(0.90) 0.031(0.80) Dimensions in inches and (millimeters) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 6 Document ID Issued Date Revised Date DS-251105 2008/02/10 2010/05/10 Revision E Page. 9 Formosa MS ESD N-Channel SMD MOSFET 2N7002K Packing information P0 P1 d E F B A W P D2 D1 T C W1 D unit:mm Item Symbol Tolerance SOT-23 Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 3.15 2.77 1.22 1.50 178.00 55.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 12.0 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 7 Document ID Issued Date Revised Date DS-251105 2008/02/10 2010/05/10 Revision E Page. 9 Formosa MS ESD N-Channel SMD MOSFET 2N7002K Reel packing PACKAGE REEL SIZE SOT-23 7" REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) 3,000 4.0 15,000 183*183*123 178 CARTON SIZE (m/m) 382*262*387 CARTON (pcs) APPROX. GROSS WEIGHT (kg) 11.6 240,000 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 t25o C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o <3 C /sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) 150 oC 200 oC 60~120sec Tsmax to T L -Ramp-upRate <3 oC/sec Time maintained above: -Temperature(T L ) -Time(t L ) 217 oC 60~260sec 255 oC-0/+5 oC Peak Temperature(T P ) Time within 5 oC of actual Peak Temperature(t P ) 10~30sec Ramp-down Rate <6 oC/sec Time 25 oC to Peak Temperature <6minutes http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 8 Document ID Issued Date Revised Date DS-251105 2008/02/10 2010/05/10 Revision E Page. 9 Formosa MS ESD N-Channel SMD MOSFET 2N7002K High reliability test capabilities Item Test Conditions Reference MIL-STD-750D METHOD-2031 O 1. Solder Resistance at 260 ± 5 C for 10 ± 2sec. immerse body into solder 1/16"±1/32" at 245±5 C for 5 sec. MIL-STD-202F METHOD-208 V DS =0.8 X BV DSS, V GS =0V at T J=150 OC for 168 hrs. MIL-STD-750D METHOD-1026 O 2. Solderability 3. High Temperature Reverse Bias MIL-STD-750D METHOD-1027 O 4. Operation Life Test Continuous operation at max rated T A=25 C, P C=P C(max) for 500hrs. 5. Pressure Cooker 15P SIG at T A=121 OC for 4 hrs. 6. Temperature Cycling -55 C to +125 C dwelled for 30 min. and transferred for 5min. total 10 cycles. 7. Thermal Shock 0 OC for 5 min. rise to 100 OC for 5 min. total 10 cycles. MIL-STD-750D METHOD-1056 8. Humidity at T A=85 OC, RH=85% for 1000hrs. MIL-STD-750D METHOD-1038 9. High Temperature Storage Life at 175 OC for 1000 hrs. MIL-STD-750D METHOD-1031 O http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 JESD22-A102 MIL-STD-750D METHOD-1051 O Page 9 Document ID Issued Date Revised Date DS-251105 2008/02/10 2010/05/10 Revision E Page. 9