2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=2000V (Typical:3000V) as per JESD22 A114 and ESD CDM=2000V as per JESD22 C101 D S G SOT-23 Marking : 7K Absolute Maximum Ratings * Symbol TA = 25°C unless otherwise noted Parameter Value Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage RGS ≤ 1.0MΩ 60 V VGSS Gate-Source Voltage ±20 V 300 800 mA ID Drain Current TJ Operating Junction Temperature Range -55 to +150 °C Storage Temperature Range -55 to +150 °C TSTG Continuous Pulsed * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol PD RθJA Parameter Value Units Total Device Dissipation Derating above TA = 25°C 350 2.8 mW mW/°C Thermal Resistance, Junction to Ambient * 350 °C/W * Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size © 2011 Fairchild Semiconductor Corporation 2N7002K Rev. A3 www.fairchildsemi.com 1 2N7002K — N-Channel Enhancement Mode Field Effect Transistor January 2012 Symbol TA = 25°C unless otherwise noted Parameter Test Condition MIN MAX Units Off Characteristics (Note1) BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 10uA 60 V IDSS Zero Gate Voltage Drain Current VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, @TC=125°C 1.0 500 μA IGSS Gate-Body Leakage VGS = ±20V, VDS = 0V ±10 μA 2.5 V 2 4 Ω On Characteristics (Note1) VGS(th) Gate Threshold Voltage RDS(ON) Satic Drain-Source On-Resistance VGS = 10V, ID = 0.5A VGS = 4.5V, ID = 200mA ID(ON) gFS VDS = VGS, ID = 250uA 1.0 On-State Drain Current VGS = 10V, VDS = 7.5V 1.5 A Forward Transconductance VDS = 10V, ID = 0.2A 200 mS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS= 0V, f = 1.0MHz 50 pF 15 pF 6 pF Switching Characteristics tD(ON) Turn-On Delay Time tD(OFF) Turn-Off Delay Time VDD = 30V, IDSS = 200mA, RG = 10Ω, VGS= 10V 5 30 ns Note1 : Short duration test pulse used to minimize self-heating effect. © 2011 Fairchild Semiconductor Corporation 2N7002K Rev. A3 www.fairchildsemi.com 2 2N7002K — N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate Voltage and Drain Current 3.0 RDS(on), (Ω) DRANI-SOURCE ON-RESISTANCE ID. DRAIN-SOURCE CURRENT(A) 2.0 VGS = 10V 5V 1.5 4V 1.0 3V 0.5 2V 2 4 6 8 10 4V 2.5 4.5V 5V 2.0 6V 7V 1.5 10V 1.0 9V 8V 0.5 0.0 0.0 0 VGS = 3V 0.2 0.4 0.6 0.8 1.0 ID. DRAIN-SOURCE CURRENT(A) VDS. DRAIN-SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate-Source Voltage RDS(on) (Ω) DRANI-SOURCE ON-RESISTANCE 3.0 VDS = 10V ID = 500 mA 2.5 2.0 1.5 1.0 0.5 -50 0 50 100 150 o TJ. JUNCTION TEMPERATURE( C) Figure 6. Gate Threshold Variation with Temperature Vth, Gate-Source Threshold Voltage (V) Figure 5. Transfer Characteristics ID. DRAIN-SOURCE CURRENT(A) 1.0 VDS = 10V 0.8 o 25( C) o TJ = -25( C) o 150( C) 0.6 o 125( C) 0.4 o 75( C) 0.2 3 4 5 6 ID = 1 mA 1.6 ID = 0.25 mA 1.4 1.2 0 50 100 150 o VGS. GATE-SOURCE VOLTAGE (V) TJ. JUNCTION TEMPERATURE( C) © 2011 Fairchild Semiconductor Corporation 2N7002K Rev. A3 VDS = VGS 1.8 1.0 -50 0.0 2 2.0 www.fairchildsemi.com 3 2N7002K — N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics 2N7002K — N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics (Continue) Figure 7. Reverse Drain Current Variation with Diode Forward Voltage and Temperature IS Reverse Drain Current, [mA] VGS = 0 V 100 o TA=150 C o 25 C 10 o -55 C 1 0.0 0.2 0.4 0.6 0.8 1.0 VSD, Body Diode Forward Voltage [V] © 2011 Fairchild Semiconductor Corporation 2N7002K Rev. A3 www.fairchildsemi.com 4 2N7002K — N-Channel Enhancement Mode Field Effect Transistor Physical Dimensions SOT-23 Dimensions in Millimeters © 2011 Fairchild Semiconductor Corporation 2N7002K Rev. A3 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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