UNISONIC TECHNOLOGIES CO., LTD UT2311 Power MOSFET -4A, -20V P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES * Extremely low on-resistance due to high density cell * Perfect thermal performance and electrical capability with advanced technology of trench process SYMBOL ORDERING INFORMATION Ordering Number Note: UT2311G-AE3-R Pin Assignment: G: Gate D: Drain Package SOT-23 Pin Assignment 1 2 3 S G D Packing Tape Reel S: Source MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-365.D UT2311 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current ID -4 A Pulsed Drain Current IDM -20 A Power Dissipation (TA=25°C) (Note 2) PD 1.25 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Surface mounted on 1 in 2 copper pad of FR4 board. THERMAL DATA PARAMETER Junction to Ambient (PCB mounted) Note: Surface Mounted on FR4 board t ≤ 5 sec. SYMBOL θJA RATINGS 100 UNIT °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS =0V, ID =-250µA VDS =-16V,VGS =0V VGS =±8V, VDS =0V VGS(TH) VDS =VGS, ID =-250µA VGS =-4.5V, ID =-4.0 A VGS =-2.5V, ID =-2.5 A VDS ≥ -10V, VGS =-4.5V RDS(ON) On-State Drain Current ID(ON) DYNAMIC PARAMETERSb Input Capacitance CISS Output Capacitance COSS VDS =-6V, VGS =0 V, f =1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERSb Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD =-4V, VGEN =-4.5V, ID =-1A Turn-OFF Delay Time tD(OFF) RL =4Ω, RG =6Ω Turn-OFF Fall-Time tF Total Gate Charge QG VGS =-4.5V, VDS =-6V, ID =-4.0A Gate Source Charge QGS Gate Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS =0 V, IS =-1.6A, Maximum Continuous Drain-Source IS Diode Forward Current Note: Pulse test; pulse width ≤ 300μs, duty cycle ≤ 2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -20 -1.0 ±100 -0.45 45 75 55 85 -6 V µA nA V mΩ mΩ A 970 485 160 pF pF pF 18 45 95 65 8.5 1.5 2.1 ns ns ns ns nC nC nC -0.8 12 -1.2 V -1.6 A 2 of 4 QW-R502-365.D UT2311 Power MOSFET TEST CIRCUITS AND WAVEFORMS Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Switching Waveforms 3 of 4 QW-R502-365.D UT2311 Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Gate Threshold Voltage 300 300 250 250 Drain Current, -ID (µA) Drain Current, -ID (µA) Drain Current vs. Drain-Source Breakdown Voltage 200 150 100 50 0 200 150 100 50 0 5 10 15 20 25 30 0 35 0.1 0.2 0.3 0.4 0.5 0.6 Gate Threshold Voltage, -VTH (V) Drain-Source Breakdown Voltage, -BVDSS (V) Drain Current, -ID (A) Drain Current, -ID (A) 0 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-365.D