UNISONIC TECHNOLOGIES CO., LTD UT2308 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2308 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SYMBOL ORDERING INFORMATION Ordering Number Note: UT2308G-AE2-R UT2308G-AE3-R Pin Assignment: S: Source Package G: Gate SOT-23-3 SOT-23 D: Drain Pin Assignment 1 2 3 S G D S G D Packing Tape Reel Tape Reel MARKING 23GG www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-128.E UT2308 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±10 V Continuous Drain Current ID 2.7 A Power Dissipation PD 1.25 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS =0 V, ID =250 µA Drain-Source Leakage Current IDSS VDS =20 V, VGS =0 V Gate-Source Leakage Current IGSS VDS =0 V, VGS = ±10V ON CHARACTERISTICS Gate-Threshold Voltage VGS(TH) VDS =VGS, ID =250 µA VGS =4.5 V, ID =1A Static Drain-Source On-State RDS(ON) Resistance (Note2) VGS =2.5 V, ID =1A DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG Gate Source Charge QGS VGS=4.5V Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width≤300μs, duty cycle≤2%. 3. Surface mounted on FR4 board t≤5 sec. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 20 0.4 0.8 1.0 ±100 V µA nA 1.0 80 110 V mΩ mΩ 215 65 45 pF pF pF 3.8 0.7 0.9 nC nC nC 0.8 1.2 V 2 of 3 QW-R502-128.E UT2308 Power MOSFET TYPICAL CHARACTERICS ■ Drain Current vs. Drain-Source Breakdown Voltage 300 Drain Current vs. Gate Threshold Voltage 300 250 Drain Current, ID (μA) Drain Current, ID (μA) 250 200 150 100 50 150 100 50 0 0 5 10 15 20 25 30 0 35 0 0.2 0.4 0.6 0.8 1.0 1.2 Drain-Source Breakdown Voltage, BVDSS (V) Gate Threshold Voltage, VTH (V) Static Drain-Source On-State Resistance Drain-Source Current vs. Source to Drain Voltage 1.2 Continuous Drain-Source Current, ISD (A) 1.2 1 Drain Current, ID (A) 200 VGS=4.5V 0.8 0.6 VGS=2.5V 0.4 0.2 0 0 10 20 30 40 50 60 70 Drain to Source Voltage, VDS(mV) 1.4 1 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Source to Drain Voltage, VSD(V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-128.E