UNISONIC TECHNOLOGIES CO., LTD UT2312

UNISONIC TECHNOLOGIES CO., LTD
UT2312
Power MOSFET
5A, 20V N-CHANNEL
ENHANCEMENT MODE MOSFET

DESCRIPTION
The UT2312 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.

FEATURES
* RDS(ON) < 33 mΩ @ VGS =4.5V, ID =5.0 A
* RDS(ON) < 40 mΩ @ VGS =2.5 V, ID =4.0 A
* Advanced trench process technology
* Excellent thermal and electrical capabilities
* High density cell design for ultra low on-resistance

SYMBOL
3.Drain
2.Gate
1.Source

ORDERING INFORMATION
Ordering Number
Note:

UT2312G-AE3-R
Pin Assignment: G: Gate
D: Drain
Package
SOT-23
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
S: Source
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-205.F
UT2312

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain Current
ID
5
A
Pulsed Drain Current
IDM
15
A
Power Dissipation (TA =25°C) (Note 2)
PD
1.25
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Surface mounted on 1 in 2 copper pad of FR4 board.

THERMAL DATA
PARAMETER
Junction to Ambient

SYMBOL
θJA
RATINGS
100
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
ON CHARACTERISTICS
Gate-Threshold Voltage
Static Drain–Source On–Resistance
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS =0V, ID =250 µA
VDS=20 V, VGS =0 V
VGS =±8V, VDS = 0 V
VGS(TH)
VDS =VGS, ID =250 µA
VGS =4.5V, ID =5.0 A
VGS =2.5 V, ID =4.0 A
VDS≥10 V, VGS = 4.5 V
VDS = 5V, ID = 5.0 A
RDS(ON)
On-State Drain Current
ID(ON)
Forward Transconductance
gFS
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =10V, VGS =0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS =10V, VGS =4.5V, ID =3.6A
Gate Source Charge
QGS
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD=10V, ID =1A, RL =10Ω
Turn-ON Rise Time
tR
VGEN =4.5V, RG =6Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=1.0 A,VGS=0 V
Max. Diode Forward Current
IS
Notes: Pulse test; pulse width ≤ 300μs, duty cycle ≤ 2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
20
1.0
±100
0.45
V
µA
nA
20
V
mΩ
mΩ
A
S
900
140
100
pF
pF
pF
25
35
33
40
15
11
1.4
2.2
15
40
48
31
14
25
60
70
45
nC
nC
nC
ns
ns
ns
ns
0.75
1.2
1.6
V
A
2 of 3
QW-R502-205.F
UT2312

Power MOSFET
TEST CIRCUIT AND WAVEFORM
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R502-205.F