UNISONIC TECHNOLOGIES CO., LTD UT2312 Power MOSFET 5A, 20V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UT2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) < 33 mΩ @ VGS =4.5V, ID =5.0 A * RDS(ON) < 40 mΩ @ VGS =2.5 V, ID =4.0 A * Advanced trench process technology * Excellent thermal and electrical capabilities * High density cell design for ultra low on-resistance SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Note: UT2312G-AE3-R Pin Assignment: G: Gate D: Drain Package SOT-23 Pin Assignment 1 2 3 S G D Packing Tape Reel S: Source MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-205.F UT2312 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current ID 5 A Pulsed Drain Current IDM 15 A Power Dissipation (TA =25°C) (Note 2) PD 1.25 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Surface mounted on 1 in 2 copper pad of FR4 board. THERMAL DATA PARAMETER Junction to Ambient SYMBOL θJA RATINGS 100 UNIT °C/W ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate–Body Leakage, Forward ON CHARACTERISTICS Gate-Threshold Voltage Static Drain–Source On–Resistance SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS =0V, ID =250 µA VDS=20 V, VGS =0 V VGS =±8V, VDS = 0 V VGS(TH) VDS =VGS, ID =250 µA VGS =4.5V, ID =5.0 A VGS =2.5 V, ID =4.0 A VDS≥10 V, VGS = 4.5 V VDS = 5V, ID = 5.0 A RDS(ON) On-State Drain Current ID(ON) Forward Transconductance gFS DYNAMIC PARAMETERS Input Capacitance CISS VDS =10V, VGS =0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS =10V, VGS =4.5V, ID =3.6A Gate Source Charge QGS Gate Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=10V, ID =1A, RL =10Ω Turn-ON Rise Time tR VGEN =4.5V, RG =6Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=1.0 A,VGS=0 V Max. Diode Forward Current IS Notes: Pulse test; pulse width ≤ 300μs, duty cycle ≤ 2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 20 1.0 ±100 0.45 V µA nA 20 V mΩ mΩ A S 900 140 100 pF pF pF 25 35 33 40 15 11 1.4 2.2 15 40 48 31 14 25 60 70 45 nC nC nC ns ns ns ns 0.75 1.2 1.6 V A 2 of 3 QW-R502-205.F UT2312 Power MOSFET TEST CIRCUIT AND WAVEFORM UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-205.F