AOT29S50/AOB29S50/AOTF29S50 500V 29A α MOS TM Power Transistor General Description Product Summary The AOT29S50 & AOB29S50 & AOTF29S50 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max 600V IDM 120A RDS(ON),max 0.15Ω Qg,typ 26.6nC Eoss @ 400V 6.3µJ 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT29S50L & AOB29S50L & AOTF29S50L Top View TO-220 TO-263 D2PAK TO-220F D D AOT29S50 G D S G D AOTF29S50 VGS Gate-Source Voltage TC=25°C Pulsed Drain Current TC=100°C C ID S AOB29S50 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter AOT29S50/AOB29S50 VDS Drain-Source Voltage Continuous Drain Current G S S G AOTF29S50 500 AOTF29S50L ±30 29 18 IDM Units V V 29* 29* 18* 18* A 120 Avalanche Current C IAR 7.5 A Repetitive avalanche energy C EAR 110 mJ Single pulsed avalanche energy G EAS TC=25°C PD Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness H Peak diode recovery dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering J purpose, 1/8" from case for 5 seconds TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Symbol RθJA mJ 50 37.9 W 2.9 0.4 0.3 W/ oC 100 20 -55 to 150 dv/dt A RθCS Maximum Case-to-sink Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev0: March 2012 608 357 V/ns °C 300 °C AOT29S50/AOB29S50 AOTF29S50 AOTF29S50L 65 65 65 °C/W 0.5 0.35 -2.5 -3.3 °C/W °C/W www.aosmd.com Units Page 1 of 7 AOT29S50/AOB29S50/AOTF29S50 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units ID=250µA, VGS=0V, TJ=25°C 500 - - ID=250µA, VGS=0V, TJ=150°C 550 600 - V µA STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VDS=500V, VGS=0V - - 1 VDS=400V, TJ=150°C - 10 - IGSS Gate-Body leakage current VDS=0V, VGS=±30V - - ±100 VGS(th) Gate Threshold Voltage VDS=5V,ID=250µA 2.6 3.3 3.9 nΑ V RDS(ON) Static Drain-Source On-Resistance VSD Diode Forward Voltage IS ISM VGS=10V, ID=14.5A, TJ=25°C - 0.13 0.15 Ω VGS=10V, ID=14.5A, TJ=150°C - 0.34 0.4 Ω IS=14.5A,VGS=0V, TJ=25°C - 0.85 - V Maximum Body-Diode Continuous Current - - 29 A Maximum Body-Diode Pulsed Current - - 120 A - 1312 - pF - 88 - pF - 78 - pF - 227 - pF VGS=0V, VDS=100V, f=1MHz - 2.5 - pF VGS=0V, VDS=0V, f=1MHz - 4.8 - Ω - 26.6 - nC - 6.2 - nC DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Co(er) Effective output capacitance, energy related H Crss Effective output capacitance, time related I Reverse Transfer Capacitance Rg Gate resistance Co(tr) VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 400V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg VGS=10V, VDS=400V, ID=14.5A Qgs Gate Source Charge Qgd Gate Drain Charge - 9.2 - nC tD(on) Turn-On DelayTime - 28 - ns tr Turn-On Rise Time - 39 - ns tD(off) Turn-Off DelayTime - 103 - ns tf trr Turn-Off Fall Time - 40 - ns VGS=10V, VDS=400V, ID=14.5A, RG=25Ω Body Diode Reverse Recovery Time Peak Reverse Recovery Current IF=14.5A,dI/dt=100A/µs,VDS=400V - 387 - ns Irm IF=14.5A,dI/dt=100A/µs,VDS=400V - 29.6 - Qrr Body Diode Reverse Recovery Charge IF=14.5A,dI/dt=100A/µs,VDS=400V - 7.3 - A µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. L=60mH, IAS=4.5A, VDD=150V, Starting TJ=25°C H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS. I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS. J. Wavesoldering only allowed at leads. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: March 2012 www.aosmd.com Page 2 of 7 AOT29S50/AOB29S50/AOTF29S50 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 50 10V 10V 45 35 40 7V 35 6V ID (A) ID (A) 6V 25 30 25 7V 30 5.5V 20 5.5V 15 20 15 10 5V 10 5V 5 VGS=4.5V 5 VGS=4.5V 0 0 0 5 10 15 0 20 5 10 15 20 VDS (Volts) Figure 2: On-Region Characteristics@125°C VDS (Volts) Figure 1: On-Region Characteristics@25°C 0.5 1000 VDS=20V -55°C 0.4 100 RDS(ON) (Ω ) 125°C ID(A) 10 1 25°C 0.3 VGS=10V 0.2 0.1 0.1 0.0 0.01 2 4 6 8 0 10 20 30 40 50 60 ID (A) Figure 4: On-Resistance vs. Drain Current and Gate Voltage VGS(Volts) Figure 3: Transfer Characteristics 1.2 3 2.5 VGS=10V ID=14.5A BVDSS (Normalized) Normalized On-Resistance 10 2 1.5 1 1.1 1 0.9 0.5 0 -100 -50 0 50 100 150 200 Temperature (°C) Figure 5: On-Resistance vs. Junction Temperature Rev0: March 2012 www.aosmd.com 0.8 -100 -50 0 50 100 150 200 TJ (oC) Figure 6: Break Down vs. Junction Temperature Page 3 of 7 AOT29S50/AOB29S50/AOTF29S50 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 1.0E+02 1.0E+01 125°C 12 VDS=400V ID=14.5A 25°C 1.0E-01 9 VGS (Volts) IS (A) 1.0E+00 1.0E-02 6 1.0E-03 3 1.0E-04 1.0E-05 0 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 7: Body-Diode Characteristics (Note E) 0 5 10 15 20 25 30 35 40 Qg (nC) Figure 8: Gate-Charge Characteristics 10000 10 8 1000 Eoss(uJ) Capacitance (pF) Ciss Coss 100 Eoss 6 4 Crss 10 2 0 1 0 100 200 300 400 VDS (Volts) Figure 9: Capacitance Characteristics 100 200 300 VDS (Volts) Figure 10: Coss stroed Energy 400 500 1000 1000 100 RDS(ON) limited 10µs RDS(ON) limited 10µs 10 100µs 1ms 1 DC ID (Amps) 100 ID (Amps) 0 500 10 100µs 1ms 1 10ms 10ms DC 0.1 0.1 TJ(Max)=150°C TC=25°C 0.01 0.1s 1s TJ(Max)=150°C TC=25°C 0.01 1 10 100 1000 VDS (Volts) Figure 11: Maximum Forward Biased Safe Operating Area for AOT(B)29S50 (Note F) Rev0: March 2012 www.aosmd.com 0.1 1 10 VDS (Volts) 100 1000 Figure 12: Maximum Forward Biased Safe Operating Area for AOTF29S50(Note F) Page 4 of 7 AOT29S50/AOB29S50/AOTF29S50 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 700 1000 600 10µs RDS(ON) limited 10 100µs 1ms 1 10ms 0.1s DC 0.1 TJ(Max)=150°C TC=25°C 1s 500 EAS(mJ) ID (Amps) 100 400 300 200 100 0.01 0 0.1 1 10 VDS (Volts) 100 1000 Figure 13: Maximum Forward Biased Safe Operating Area for AOTF29S50L(Note F) 25 50 75 100 125 TCASE (°C) Figure 14: Avalanche energy 150 175 30 Current rating ID(A) 25 20 15 10 5 0 0 25 75 100 125 TCASE (°C) Figure 15: Current De-rating (Note B) Rev0: March 2012 50 150 www.aosmd.com Page 5 of 7 AOT29S50/AOB29S50/AOTF29S50 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.35°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton 0.01 T Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance for AOT(B)29S50 (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 17: Normalized Maximum Transient Thermal Impedance for AOTF29S50 (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3.3°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 18: Normalized Maximum Transient Thermal Impedance for AOTF29S50L (Note F) Rev0: March 2012 www.aosmd.com Page 6 of 7 AOT29S50/AOB29S50/AOTF29S50 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev0: March 2012 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 7 of 7