UNISONIC TECHNOLOGIES CO., LTD UT4411 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) < 32mΩ @ VGS = -10 V, ID = -8 A * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL Drain Gate Source ORDERING INFORMATION Ordering Number Note: UT4411G-S08-R Pin Assignment: G: Gate Package D: Drain SOP-8 S: Source 1 S 2 S Pin Assignment 3 4 5 6 S G D D 7 D 8 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-191.D UT4411 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID -8 A Pulsed Drain Current IDM -40 A Power Dissipation PD 3 W Junction Temperature TJ +150 °C Strong Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL θJA Junction-to-Ambient MIN TYP 54 MAX 75 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS Gate Threshold Voltage On State Drain Current Static Drain-Source On-Resistance SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS =0 V, ID =-250 µA VDS =-24 V, VGS =0 V VDS =0 V, VGS = ±20 V -30 VGS(TH) ID(ON) VDS =VGS, ID =-250 µA VDS =-5V, VGS =-10 V VGS =-10V, ID =-8A VGS =-4.5V, ID =-5A -1.2 -40 RDS(ON) DYNAMIC PARAMETERS Input Capacitance CISS VDS =-15V, VGS =0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS =-15V, VGS =-10V, Gate Source Charge QGS ID =-8A Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VGS=-10V,VDS=-10V, ID =-0.25A, RGEN =25Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=-1A,VGS=0V Maximum Body-Diode Continuous Current IS Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300us, duty cycle ≤0.5% max. 3. Surface mounted on 1 in 2 copper pad of FR4 board, t≤10s. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -1 ±100 -2.4 26 50 32 55 1200 1400 170 122 18.4 2.7 4.9 38 47 300 130 23 -0.76 -1 -4.2 V µA nA V A mΩ pF nC ns V A 2 of 5 QW-R502-191.D UT4411 TYPICAL CHARACTERISTICS On-Region Characteristics 30 -10V -5V -6V 25 VDS=-5V -4.5V 25 20 -4V 15 -3.5V 10 5 15 10 125 25 0 0 1 2 3 4 Drain to Source Voltage, -VDS (V) 0 5 On-Resistance vs. Drain Current and Gate Voltage 60 1 2 3 4 Gate to Source Voltage, -VGS (V) ID=-7.5A 55 VGS=-4.5V 50 45 40 35 30 25 VGS=-10V 20 15 5 On-Resistance vs. Junction Temperature 1.60 Normalized On-Resistance Drain to Source On-Resistance, RDS(ON) (mΩ) 20 5 VGS=-3.0V 0 VGS=-10V 1.40 1.20 VGS=-4.5V 1.00 0.80 10 0 5 10 15 20 Drain Current, -ID (A) 25 0 On-Resistance vs. Gate-Source Voltage 80 1.0E+01 ID=-7.5A 70 Reverse Drain Current, -IS (A) Drain to Source On-Resistance, RDS(ON) (mΩ) Transfer Characteristics 30 Drain Current, -ID (A) Drain Current, -ID (A) Power MOSFET 60 50 125 40 25 30 20 10 0 3 4 5 6 8 9 7 Gate to Source Voltage, -VGS (V) 10 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 25 75 100 125 150 50 Junction Temperature ( ) 175 Body-Diode Characteristics 1.0E+00 125 1.0E-01 1.0E-02 1.0E-03 25 1.0E-04 1.0E-05 1.0E-06 0.0 1.0 0.4 0.6 0.2 0.8 Body Diode Forward Voltage, -VSD (V) 3 of 5 QW-R502-191.D UT4411 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Capacitance (pF) Gate to Source Voltage, -VGS (V) 100.0 Maximum Forward Biased Safe Operating Area (Note E) RDS(ON) Limited 10.0 100μs 10ms 0.1s TJ(Max)=150℃ TA=25℃ 10μs 30 1ms 20 1s 10s 1.0 40 Single Pulse Power Rating Junctionto-Ambient (Note E) 10 DC 1 10 100 Drain to Source Voltage,-VDS (V) 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Normalized Transient Thermal Resistance,ZθJA 0.1 0.1 TJ(Max)=150℃ TA=25℃ UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-191.D UT4411 Power MOSFET TYPICAL CHARACTERISTICS (Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-191.D