UTC-IC UD4606L-S08-R

UNISONIC TECHNOLOGIES CO., LTD
UD4606
Power MOSFET
DUAL ENHANCEMENT MODE
(N-CHANNEL/P-CHANNEL)
„
DESCRIPTION
The UTC UD4606 provides excellent RDS(ON) and low gate
charge by using advanced trench technology MOSFETs. The
complementary MOSFETs may be help to form a level shifted high
side switch and also for lots of other applications.
„
DIP-8
FEATURES
* N-Channel: 30V/6.9A
SOP-8
RDS(ON) = 22.5 mΩ (typ.) @VGS =10V
RDS(ON) = 34.5 mΩ (typ.) @VGS=4.5V
* P-Channel: -30V/-6A
RDS(ON) = 28 mΩ (typ.) @VGS= -10V
RDS(ON) = 44 mΩ (typ.) @VGS= -4.5V
* Reliable and rugged
„
SYMBOL
„
ORDERING INFORMATION
Ordering Number
Lead Free Plating
Halogen Free
UD4606L-D08-T
UD4606G-D08-T
UD4606L-S08-R
UD4606G-S08-R
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
Package
DIP-8
SOP-8
Pin Assignment
Packing
1 2 3 4 5 6 7 8
S1 G1 S2 G2 D2 D2 D1 D1
Tube
S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel
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UD4606
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Power MOSFET
PIN CONFIGURATION
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www.unisonic.com.tw
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UD4606
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Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified)
N-CHANNEL
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note2)
Pulsed Drain Current (Note2)
SYMBOL
VDSS
VGSS
ID
IDM
DIP-8
SOP-8
Power Dissipation
Junction Temperature
Storage Temperature
RATINGS
30
±20
6.9
30
2.5
2
+150
-55 ~ +150
PD
TJ
TSTG
UNIT
V
V
A
A
W
W
°С
°С
P-CHANNEL
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 2)
Pulsed Drain Current (Note 2)
RATINGS
UNIT
-30
V
±20
V
-6
A
-30
A
DIP-8
2.5
W
Power Dissipation
PD
SOP-8
2
W
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Surface Mounted on 1in 2 pad area, t≤10sec
„
SYMBOL
VDSS
VGSS
ID
IDM
THERMAL DATA
PARAMETER
DIP-8
Junction to Ambient (Note)
SOP-8
Note: Surface Mounted on 1in 2 pad area, t≤10sec
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
MIN
TYP
74
67
MAX
110
80
UNIT
°С/W
°С/W
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ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
N-CHANNEL
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
SYMBOL
Drain-Source On-State Resistance
RDS(ON)
TEST CONDITIONS
MIN
BVDSS
IDSS
IGSS
VGS=0V, ID=250uA
VDS=24V, VGS=0V
VDS=0V, VGS=±20V
30
VGS(TH)
VDS=VGS, ID=250uA
VGS=10V, ID=6.9A
VGS=4.5V, ID=5A
1
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V,VDS=15V,f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
tD(ON)
VDS=15V, VGS=10V, RG=3Ω,
Turn-ON Rise Time
tR
RL=2.2Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
Total Gate Charge (Note2)
QG
VDS=15V, VGS=10V, ID=6.9A
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
IS=1A, VGS=0V
Diode Continuous Forward Current (Note3)
IS
Reverse Recovery Time
tRR
IDS=6.9A, dI/dt=100A/μs
Reverse Recovery Charge
QRR
TYP
1.9
22.5
34.5
MAX UNIT
1
100
V
uA
nA
3
28
42
V
mΩ
mΩ
680
102
77
pF
pF
pF
4.6
4.1
20.6
5.2
13.8
1.82
3.2
ns
ns
ns
ns
nC
nC
nC
0.76
1
3
V
A
ns
nC
16.5
7.8
P-CHANNEL
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note2)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
Total Gate Charge (Note2)
Gate-Source Charge
Gate-Drain Charge
SYMBOL
MIN
BVDSS
IDSS
IGSS
VGS=0V, ID=-250uA
VDS=-24V, VGS=0V
VDS=0V, VGS=±20V
-30
VGS(TH)
VDS=VGS, ID=-250uA
VGS=-10V, ID=-6A
VGS=-4.5V, ID=-5A
-1.2
RDS(ON)
CISS
COSS
CRSS
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
VGS=0V,VDS=-15V,f=1.0MHz
VDS=-15V, VGS=-10V,
RG=3Ω, RL=2.7Ω
VDS=-15V, VGS=-10V,
ID=-6A
TYP
-2
28
44
MAX UNIT
-1
±100
V
uA
nA
-2.4
35
58
V
mΩ
mΩ
920
190
122
pF
pF
pF
7.7
5.7
20.2
9.5
18.5
2.7
4.5
ns
ns
ns
ns
nC
nC
nC
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ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
IS=-1A, VGS=0V
Diode Continuous Forward Current (Note3)
IS
Reverse Recovery Time
tRR
IDS=-6A, dI/dt=100A/μs
Reverse Recovery Charge
QRR
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300µs, duty cycle ≤2%.
2
3. Surface Mounted on 1in pad area, t≤10sec.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
-0.76
-1
-4.2
20
8.8
V
A
ns
nC
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TYPICAL CHARACTERISTICS
Drain Current,ID (A)
Drain Current,ID (A)
N-CHANNEL
On-Resistance vs. Drain Current
and Gate Voltage
60
Capacitance Characteristics
1000
f=1MHZ
VGS=0V
900
50
800
700
VGS=4.5V
40
CISS
600
500
30
400
300
20
VGS=10V
200
COSS
100
10
0
10
15
Drain Current,ID (A)
20
0
5
25
10
15
20
Drain to Source Voltage,VDS (V)
30
Reverse Drain Current,IS (A)
5
Drain to Source OnResistance,RDS(ON) (mΩ)
0
CRSS
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TYPICAL CHARACTERISTICS(Cont.)
„
Gate- Charge Characteristics
40
VDS=15V
ID=6.9A
8
TJ(Max)=150℃
TA=25℃
30
Power (W)
Gate to Source Voltage,VGS (V)
10
Single Pulse Power Rating Junctionto-Ambient
6
4
20
10
2
0
0
4
6
8
10
Gate Charge,QG (nC)
12
0.001
14
0.01
0.1
1
10
Pulse Width (s)
100
1000
Normalized Transient Thermal
Resistance,ZθJA
2
Drain Current,ID (A)
0
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Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
„
P-CHANNEL
On-Region Characteristics
-10V
Drain Current,-ID (A)
25
-6V
Transfer Characteristics
30
-4.5V
VDS=-5V
-5V
20
25
Drain Current,-ID (A)
30
-4V
15
10
-3.5V
5
VGS=-3V
20
15
10
125℃
5
0
25℃
0
0
1
2
3
4
Drain to Source Voltage,-VDS (V)
5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Gate to Source Voltage,-VGS (V)
On-Resistance vs. Drain Current
and Gate Voltage
60
Capacitance Characteristics
1500
50
1250
VGS=-4.5V
45
Capacitance (pF)
Drain to Source OnResistance,RDS(ON) (mΩ)
55
40
35
VGS=-10V
30
25
20
CISS
1000
750
500
COSS
250
15
CRSS
0
10
10
15
20
Drain Current,-ID (A)
0
25
5
10
15
20
30
25
Drain to Source Voltage,-VDS (V)
Reverse Drain Current,-IS (A)
5
Drain to Source OnResistance,RDS(ON) (mΩ)
0
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Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
„
Gate-Charge Characteristics
40
VDS=-15V
ID=-6A
8
TJ(Max)=150℃
TA=25℃
30
Power (W)
Gate to Source Voltage,-VGS (V)
10
6
4
20
10
2
0
100.0
10.0
4
8
16
12
Gate Charge,-QG (nC)
100μs
1ms
10μs
10ms
1s
DC
0.1
0.1
10s
1
0.1
10
Pulse Width (s)
100
1000
Normalized Maximum Transient
Thermal Impedance
Maximum Forward Biased Safe
Operating Area
TJ(Max)=150℃
RDS(ON) Limited
TA=25℃
0.1s
1.0
0
0.001 0.01
20
10
Normalized Transient Thermal
Resistance,ZθJA
0
Drain Current,-ID (A)
Single Pulse Power Rating Junctionto-Ambient
1
D=TON/T
TJ,PK=TA+PDM.Z
θJA.RθJA
RθJA=62.5℃/W
In descending order
D=0.5,0.3,0.1,0.05,0.
02,0.01,single pulse
PD
0.1
TON
Single Pulse
T
0.01
1
10
100
Drain to Source Voltage,-VDS (V)
0.000010.00010.001 0.01 0.1
1 10
100 1000
Pulse Width (s)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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