UNISONIC TECHNOLOGIES CO., LTD UT4430 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT4430 uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for applications, such as high-side DC/DC conversion, notebook and sever. FEATURES * VDS(V)=30V * ID=18A (VGS = 10V) * RDS(ON) < 5.5mΩ @ VGS=10V, ID=18A * RDS(ON) < 7.5mΩ @ VGS=4.5V, ID=15A SYMBOL ORDERING INFORMATION Ordering Number Note: UT4430G-S08-R Pin Assignment: G: Gate Package D: Drain SOP-8 S: Source 1 S 2 S Pin Assignment 3 4 5 6 S G D D 7 D 8 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-333.C UT4430 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (TA=25°C) (Note 2) t≤10s ID 18 A Pulsed Drain Current (Note 3) IDM 80 A Avalanche Current (Note 3) IAR 30 A Repetitive avalanche energy (Note 3) L=0.3mH EAR 135 mJ Power Dissipation (TA=25°C) PD 3 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Surface mounted on 1 in2 copper pad of FR4 board. 3. Pulse width limited by TJ(MAX) THERMAL DATA PARAMETER Junction to Ambient (Note) Note: Surface mounted on 1 in2 copper pad of FR4 board SYMBOL θJA MIN TYP 59 MAX 75 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage SYMBOL Drain-Source On-State Resistance RDS(ON) TEST CONDITIONS BVDSS IDSS IGSS VGS=0V, ID=250µA VDS=30V,VGS=0V VGS=±20V, VDS=0V 30 VGS(TH) VD S=VGS, ID=250µA VGS=10V, ID=18A VGS=4.5V, ID=15A 1 DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VDS=15V, VGS=0 V, f=1MHz Reverse Transfer Capacitance CRSS Gate Resistance RG VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VGS=10V,VDS=15V, RL=0.83Ω, RGEN=3Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge QG VGS=10 V, VDS=15 V, ID=18 A Gate Source Charge QGS Gate Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=1 A, VGS=0 V Diode Continuous Forward Current IS Reverse Recovery Time tRR IF=18A, dI/dt=100A/μs Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP 1.8 4.7 6.2 MAX UNIT 1 100 V µA nA 2.5 5.5 7.5 V mΩ mΩ 4660 6060 7270 425 638 960 240 355 530 0.2 0.45 0.9 pF pF pF Ω 12 8 51.5 8.8 103 18 15 16 12 70 14 124 ns ns ns ns nC nC nC 0.7 1 4.5 44 30 V A ns nC 80 33.5 22 2 of 5 QW-R502-333.C UT4430 Power MOSFET SWITCHING TIME TEST CIRCUIT Unclamped Inductive Switching (UIS) Waveforms Unclamped Inductive Switching (UIS) Test Circuit L VDS E AR = 1/ 2LI2AR ID VGS VDS + VDC VGS VDD - RG BVDSS IAR ID DUT VGS VGS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R502-333.C UT4430 Power MOSFET SWITCHING TIME TEST CIRCUIT Diode Recovery Test Circuit Diode Recovery Waveforms VDS + ∫ QRR = - Idt DUT VGS VDS - ISD L ISD + VGS VDC - UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw dI/dt tRR IRM VDD IG IF VDD VDS 4 of 5 QW-R502-333.C UT4430 Power MOSFET TYPICAL CHARACTERISTICS 300 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 Drain Current, ID (µA) Drain Current, ID (µA) 250 200 150 100 200 150 100 50 50 0 0 0 2.0 1.5 1.0 0.5 Gate Threshold Voltage, VTH (V) Drain Current, ID (A) Drain Current, ID (A) 0 5 10 15 20 25 30 35 Drain-Source Breakdown Voltage, BVDSS(V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-333.C