Datasheet

AO4430
30V N-Channel MOSFET
General Description
Product Summary
The AO4430 uses advanced trench technology to provide
excellent RDS(ON), shoot-through immunity, body diode
characteristics and ultra-low gate resistance. This device is
ideally suited for use as a low side switch in Notebook CPU
core power conversion.
VDS (V) = 30V
ID = 18A (VGS = 10V)
RDS(ON) < 5.5mΩ (VGS = 10V)
RDS(ON) < 7.5mΩ (VGS = 4.5V)
RoHS and Halogen-Free Compliant
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
D
Bottom View
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current AF
Pulsed Drain Current
TA=70°C
B
TA=25°C
Power Dissipation
TA=70°C
Maximum
30
Units
V
±20
V
18
ID
15
IDM
80
A
3
PD
W
2.1
Avalanche Current B
IAR
30
A
Repetitive avalanche energy 0.3mH B
EAR
135
mJ
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Rev.6.0: May 2015
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
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Typ
31
59
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
1
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
On state drain current
VGS=4.5V, VDS=5V
80
TJ=55°C
100
nA
1.8
2.5
V
4.7
5.5
6.5
8
7.5
A
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=15A
6.2
gFS
Forward Transconductance
VDS=5V, ID=18A
82
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=15V, ID=18A
mΩ
mΩ
S
1
V
4.5
A
4660
6060
7270
pF
425
638
960
pF
240
355
530
pF
0.2
0.45
0.9
Ω
80
103
124
nC
37
48
58
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
15
tD(on)
Turn-On DelayTime
12
18
nC
nC
16
ns
VGS=10V, VDS=15V, RL=0.83Ω,
RGEN=3Ω
8
12
ns
51.5
70
ns
8.8
14
ns
IF=18A, dI/dt=100A/µs
33.5
44
22
30
ns
nC
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
µA
5
VGS=10V, ID=18A
Units
V
VDS=30V, VGS=0V
Zero Gate Voltage Drain Current
Crss
Max
30
IDSS
ID(ON)
Typ
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.6.0: May 2015
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Page 2 of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
10V
50
50
4.5V
VDS=5V
3.5V
40
30
ID(A)
ID (A)
40
3.0V
20
125°C
30
20
10
25°C
10
VGS=2.5V
0
0
0
1
2
3
4
5
1
VDS (Volts)
Fig 1: On-Region Characteristics
2
2.5
3
3.5
VGS(Volts)
Figure 2: Transfer Characteristics
7.0
1.6
Normalized On
On-Resistance
6.5
VGS=4.5V
6.0
RDS(ON) (mΩ)
1.5
5.5
5.0
VGS=10V
4.5
4.0
3.5
VGS=4.5V
ID=18A
1.4
VGS=10V
1.2
1
0.8
0
20
40
60
80
100
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
16
1.0E+02
1.0E+01
1.0E+00
ID=18A
IS (A)
RDS(ON) (mΩ)
12
125°C
8
4
1.0E-01
125°C
25°C
1.0E-02
1.0E-03
25°C
1.0E-04
0
2
4
6
8
10
1.0E-05
0.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Rev.6.0: May 2015
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0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
Page 3 of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
8000
10
VDS=15V
ID=18A
Capacitance (pF)
VGS (Volts)
8
6
4
2
4000
2000
0
0
20
40
60
80
100
Ciss
6000
Crss
0
120
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
100µs
10ms
15
20
25
30
10.0
80
1ms
0.1s
1s
10s
DC
1.0
TJ(Max)=150°C
=150 C
TA=25°C
60
40
20
0
0.001
0.1
0.1
TJ(Max)=150°C
TA=25°C
10µs
Power (W)
ID (Amps)
10
100
RDS(ON)
limited
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
5
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10
Coss
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Rev.6.0: May 2015
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Page 4 of 5
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
Qgs
Vds
Qgd
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
BVDSS
AR
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev.6.0: May 2015
L
Isd
+ Vdd
trr
dI/dt
IRM
Vdd
VDC
-
IF
Vds
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Page 5 of 5