AO4430 30V N-Channel MOSFET General Description Product Summary The AO4430 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. VDS (V) = 30V ID = 18A (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 4.5V) RoHS and Halogen-Free Compliant 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D D Bottom View D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current AF Pulsed Drain Current TA=70°C B TA=25°C Power Dissipation TA=70°C Maximum 30 Units V ±20 V 18 ID 15 IDM 80 A 3 PD W 2.1 Avalanche Current B IAR 30 A Repetitive avalanche energy 0.3mH B EAR 135 mJ Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Rev.6.0: May 2015 Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL www.aosmd.com Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 On state drain current VGS=4.5V, VDS=5V 80 TJ=55°C 100 nA 1.8 2.5 V 4.7 5.5 6.5 8 7.5 A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=15A 6.2 gFS Forward Transconductance VDS=5V, ID=18A 82 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge VGS=10V, VDS=15V, ID=18A mΩ mΩ S 1 V 4.5 A 4660 6060 7270 pF 425 638 960 pF 240 355 530 pF 0.2 0.45 0.9 Ω 80 103 124 nC 37 48 58 nC Qgs Gate Source Charge Qgd Gate Drain Charge 15 tD(on) Turn-On DelayTime 12 18 nC nC 16 ns VGS=10V, VDS=15V, RL=0.83Ω, RGEN=3Ω 8 12 ns 51.5 70 ns 8.8 14 ns IF=18A, dI/dt=100A/µs 33.5 44 22 30 ns nC tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/µs Body Diode Reverse Recovery Time µA 5 VGS=10V, ID=18A Units V VDS=30V, VGS=0V Zero Gate Voltage Drain Current Crss Max 30 IDSS ID(ON) Typ A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.6.0: May 2015 www.aosmd.com Page 2 of 5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 10V 50 50 4.5V VDS=5V 3.5V 40 30 ID(A) ID (A) 40 3.0V 20 125°C 30 20 10 25°C 10 VGS=2.5V 0 0 0 1 2 3 4 5 1 VDS (Volts) Fig 1: On-Region Characteristics 2 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics 7.0 1.6 Normalized On On-Resistance 6.5 VGS=4.5V 6.0 RDS(ON) (mΩ) 1.5 5.5 5.0 VGS=10V 4.5 4.0 3.5 VGS=4.5V ID=18A 1.4 VGS=10V 1.2 1 0.8 0 20 40 60 80 100 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 16 1.0E+02 1.0E+01 1.0E+00 ID=18A IS (A) RDS(ON) (mΩ) 12 125°C 8 4 1.0E-01 125°C 25°C 1.0E-02 1.0E-03 25°C 1.0E-04 0 2 4 6 8 10 1.0E-05 0.0 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Rev.6.0: May 2015 www.aosmd.com 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8000 10 VDS=15V ID=18A Capacitance (pF) VGS (Volts) 8 6 4 2 4000 2000 0 0 20 40 60 80 100 Ciss 6000 Crss 0 120 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100µs 10ms 15 20 25 30 10.0 80 1ms 0.1s 1s 10s DC 1.0 TJ(Max)=150°C =150 C TA=25°C 60 40 20 0 0.001 0.1 0.1 TJ(Max)=150°C TA=25°C 10µs Power (W) ID (Amps) 10 100 RDS(ON) limited 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 5 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10 Coss D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Rev.6.0: May 2015 www.aosmd.com Page 4 of 5 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC Qgs Vds Qgd - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 BVDSS AR Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.6.0: May 2015 L Isd + Vdd trr dI/dt IRM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5