UNISONIC TECHNOLOGIES CO., LTD UT4392 Power MOSFET 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT4392 uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for being used in such applications: high-Side DC/DC Conversion, notebook and sever. FEATURES * VDS(V)=30V * ID=12.5 A (VGS=10V) * High Density Cell Design for Ultra Low On-resistance * RDS(ON)<11.5mΩ@VGS=10V * RDS(ON)<16.5mΩ@VGS=4.5V SYMBOL D D D D S S G S ORDERING INFORMATION Ordering Number Note: UT4392G-S08-R Pin Assignment: G: Gate Package D: Drain SOP-8 S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 S 2 S Pin Assignment 3 4 5 6 S G D D 7 D 8 D Packing Tape Reel 1 of 5 QW-R502-312-C UT4392 Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R502-312.C UT4392 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 12.5 A Pulsed Drain Current IDM 50 A Power Dissipation(TA =25°C) PD 3.0 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL MIN Junction to Ambient (PCB mounted) θJA Junction to Case θJC Notes: 1. Pulse width limited by the Maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. TYP MAX 50 25 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified.) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate-Threshold Voltage On State Drain Current (Note 1) Static Drain-Source On-Resistance(Note 1) SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS =0 V, ID =250 µA VDS =24 V, VGS =0 V VGS = ±20 V, VDS=0 V 30 VGS(TH) ID(ON) VDS =VGS, IDS =250 µA VDS ≥ 5V, VGS = 10V VGS =10 V, ID =12.5 A VGS =4.5 V, ID =10 A 1 30 RDS(ON) DYNAMIC PARAMETERS Input Capacitance CISS VDS =15 V, VGS =0 V, Output Capacitance COSS f=1.0MHz, (Note 2) Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS =15V, VGS =10 V, Gate Source Charge QGS ID =12.5A, (Note 2) Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=15V,ID=1 A,VGEN=10 V RG=6 Ω, RL=15 Ω, (Note 3) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS =2.7 A, VGS =0V Maximum Body-Diode Continuous Current IS (Note 4,5) Notes: 1. Pulse Test: PW ≤300μS, Duty Cycle ≤2% 2. For DESIGN AID ONLY, not subject to production testing. 3. Switching time is essentially independent of operating temperature. 4. Pulse width limited by the Maximum junction temperature. 5. Surface Mounted on FR4 Board, t ≤ 10 sec. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1.0 ±100 1.8 9 13 V µA nA 3 V A 11.5 mΩ 16.5 mΩ 2134 343 134 pF pF pF 26 6 5 17 3.5 40 6 nC nC nC ns ns ns ns 0.85 1.3 2.7 V A 3 of 4 QW-R502-312.C UT4392 TYPICAL CHARACTERISTICS 3.0 Body-Diode Continuous Current vs. Source to Drain Voltage 12 2.5 2.0 1.5 1 0.5 0 Drain-Source On-State Resistance Characteristics 14 Drain Current, ID (A) Body-Diode Continuous Current, IS (A) Power MOSFET VGS=10V ID=12.5A 10 8 VGS=4.5V ID=10A 6 4 2 0 0 0.2 0.4 0.6 0.8 0 Source to Drain Voltage, VSD (V) 100 150 200 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 400 Drain Current,ID (µA) 250 Drain Current,ID (µA) 50 Drain to Source Voltage, VDS (mV) 200 150 100 50 350 300 250 200 150 100 50 0 0 0.5 1.0 1.5 Gate Threshold Voltage,VTH (V) 2.0 0 0 30 40 10 20 Drain-Source Breakdown Voltage,BVDSS(V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-312.C