AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 700V@150℃ 10A RDS(ON) (at VGS=10V) < 0.75Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT10N60L & AOTF10N60L & AOB10N60L Top View TO-220 TO-263 D2PAK TO-220F D D G D AOT10N60 G S G AOTF10N60 D S S Absolute Maximum Ratings TA=25°C unless otherwise noted AOT10N60/AOB10N60 Parameter Symbol Drain-Source Voltage VDS 600 Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current TC=100°C C S G AOB10N60 AOTF10N60 ±30 ID Units V V 10 10* 7.2 7.2* A IDM 36 Avalanche Current C IAR 4.4 A Repetitive avalanche energy C EAR 290 mJ Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC EAS 580 45 5 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D TJ, TSTG dv/dt PD 50 W 2 0.4 -55 to 150 W/ oC °C 300 °C AOT10N60/AOB10N60 65 AOTF10N60 65 Units °C/W 0.5 0.5 -2.5 °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev.8.0: March 2014 250 TL Symbol RθJA RθCS mJ V/ns www.aosmd.com Page 1 of 6 AOT10N60/AOB10N60/AOTF10N60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C ID=250µA, VGS=0V V V/ oC 0.65 VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5A gFS Forward Transconductance VDS=40V, ID=5A VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM ±100 µA 4 4.5 nΑ V 0.6 0.75 Ω 1 V Maximum Body-Diode Continuous Current 10 A Maximum Body-Diode Pulsed Current 36 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss 700 Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=480V, ID=10A 3 15 S 0.73 1100 1320 1600 pF 105 130 160 pF 7.5 9.3 11 pF 3 3.8 6 Ω 31 40 nC 6 10 nC 14.4 20 nC 28 35 ns 66 80 ns 76 95 ns 64 80 ns ns µC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=10A,dI/dt=100A/µs,VDS=100V 290 350 Qrr Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=100V 3.9 4.7 Body Diode Reverse Recovery Time VGS=10V, VDS=300V, ID=10A, RG=25Ω A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=4.4A, VDD=150V, RG=25Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.8.0: March 2014 www.aosmd.com Page 2 of 6 AOT10N60/AOB10N60/AOTF10N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 100 10V VDS=40V 6.5V 16 -55°C 10 12 ID(A) ID (A) 6V 125°C 8 1 4 25°C VGS=5.5V 0 0.1 0 5 10 15 20 25 30 2 4 VDS (Volts) Fig 1: On-Region Characteristics 8 10 3 Normalized On-Resistance 1.4 1.2 RDS(ON) (Ω) 6 VGS(Volts) Figure 2: Transfer Characteristics 1.0 0.8 VGS=10V 0.6 0.4 0 4 8 12 16 20 2.5 VGS=10V ID=5A 2 1.5 1 0.5 0 -100 24 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 1.2 40 1.0E+00 125°C IS (A) BVDSS (Normalized) 1.0E+01 1.1 1 1.0E-01 1.0E-02 25°C 1.0E-03 0.9 1.0E-04 0.8 -100 1.0E-05 -50 0 50 100 150 200 TJ (°C) Figure 5:Break Down vs. Junction Temperature Rev.8.0: March 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOT10N60/AOB10N60/AOTF10N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 15 VDS=480V ID=10A 12 Ciss Capacitance (pF) VGS (Volts) 1000 9 6 Coss 100 10 3 Crss 1 0 0 10 20 30 40 0.1 50 1 10 100 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100 100 10µs RDS(ON) limited 1ms 1 10ms DC 0.1 10 100µs TJ(Max)=150°C TC=25°C ID (Amps) ID (Amps) 10 RDS(ON) limited 1 1ms TJ(Max)=150°C TC=25°C 0.1 0.01 10µs 100µs 10ms 0.1s 1s DC 0.01 1 10 100 1000 1 10 100 1000 VDS (Volts) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT10N60/AOB10N60 (Note F) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF10N60 (Note F) 12 Current rating ID(A) 10 8 6 4 2 0 0 25 50 75 100 125 150 TCASE (°C) Figure 11: Current De-rating (Note B) Rev.8.0: March 2014 www.aosmd.com Page 4 of 6 AOT10N60/AOB10N60/AOTF10N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton 0.01 T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance for AOT10N60/AOB10N60 (Note F) ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF10N60 (Note F) Rev.8.0: March 2014 www.aosmd.com Page 5 of 6 AOT10N60/AOB10N60/AOTF10N60 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.8.0: March 2014 L Isd + Vdd trr dI/dt IRM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6