UNISONIC TECHNOLOGIES CO., LTD UTD420 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS(ON) = 28mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain *Pb-free plating product number: UTD420L 1.Gate 3.Source ORDERING INFORMATION Ordering Number Normal Lead Free Plating UTD420-TN3-R UTD420L-TN3-R UTD420-TN3-T UTD420L-TN3-T www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd Package TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tube 1 of 6 QW-R502-188.A UTD420 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 10 A Pulsed Drain Current IDM 30 A Avalanche Current IAR 15 A Repetitive Avalanche Energy (L=0.1mH) EAR 36 mJ Power Dissipation (TC=25°C) PD 60 W Junction Temperature TJ +175 ℃ Strong Temperature TSTG -55 ~ +175 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL θJA Junction-to-Ambient MIN TYP 40 MAX 50 UNIT ℃/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Body Leakage Current ON CHARACTERISTICS Gate Threshold Voltage On State Drain Current Static Drain-Source On-Resistance SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS =0 V, ID =250µA VDS =24V, VGS =0 V VDS =0 V, VGS = ±20V 30 VGS(TH) ID(ON) VDS =VGS, ID =250 µA VDS =5V, VGS =4.5V VGS =10V, ID =10A VGS =4.5V, ID =7A 1 40 RDS(ON) DYNAMIC PARAMETERS Input Capacitance CISS VDS =15 V, VGS =0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS =15V, VGS =10V, ID =10A Gate Source Charge QGS Gate Drain Charge QGD Turn-ON Delay Time tD(ON) VGS=10V,VDS=15V,RL=1.5Ω, Turn-ON Rise Time tR RGEN =3Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=1A,VGS=0V Maximum Continuous Drain-Source IS Diode Forward Current Body Diode Reverse Recovery Time tRR IF=10 A, dI/dt=100A/µs Body Diode Reverse Recovery QRR IF=10 A, dI/dt=100A/µs Charge Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300us, duty cycle 0.5% max. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 100 V µA nA 1.8 3 21 32.5 28 42 710 120 72 850 pF pF pF 14.4 2.6 2.7 5.6 2.4 15.6 2.2 18 nC nC nC ns ns ns ns 0.75 1 V 10 A 21 ns 13.4 4.4 V A mΩ mΩ nC 2 of 5 QW-R502-188.A Normalized On-Resistance Drain to Source OnResistance,RDS(ON) (mΩ) Drain Current,ID (A) Drain Current,ID (A) Reverse Drain Current,IS (A) Drain to Source OnResistance,RDS(ON) (mΩ) UTD420 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Power MOSFET TYPICAL CHARACTERISTICS QW-R502-188.A 3 of 5 UTD420 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Capacitance (pF) Gate to Source Voltage,VGS (V) Drain Current,ID (A) RDS(ON) Limited 1ms 100μs 10ms 1s 10s 1.0 TJ(Max)=150℃ TA=25℃ 40 30 20 DC 1 10 Drain to Source Voltage,VDS (V) TJ(Max)=150℃ TA=25℃ 10 100 0 0.001 0.01 1 10 0.1 Pulse Width (s) 100 1000 Normalized Transient Thermal Resistance,ZθJA 0.1 0.1 Single Pulse Power Rating Junctionto-Ambient (Note F) 50 10μs 0.1s 10.0 60 Power (W) 100.0 Maximum Forward Biased Safe Operating Area (Note F) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-188.A UTD420 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-188.A