SHENZHENFREESCALE AO4948

AO4948
30V Dual N-Channel MOSFET
General Description
The AO4948 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs
make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A
monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further.
Features
FET1(N-Channel)
VDS= 30V
FET2(N-Channel)
30V
ID= 8.8A (VGS=10V)
8A (VGS=10V)
RDS(ON)
RDS(ON)
< 16mΩ (VGS=10V)
< 19mΩ (VGS=10V)
< 22mΩ (VGS=4.5V)
< 28mΩ (VGS=4.5V)
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
Top View
S1
D1
D1
D1
D2
G1
S2
G2
D2
G2
D2
G1
S2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max FET1
Drain-Source Voltage
VDS
30
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
±20
±20
V
8.8
8
7.1
6.5
IDM
60
40
IAS, IAR
21
13
A
EAS, EAR
66
25
mJ
2
2
1.3
1.3
ID
TA=70°C
C
Avalanche energy L=0.3mH
C
TA=25°C
PD
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
1/8
Units
V
VGS
TA=25°C
Avalanche Current C
Power Dissipation B
Max FET2
30
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
-55 to 150
Typ
48
74
32
A
W
°C
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
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AO4948
30V Dual N-Channel MOSFET
FET1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250uA, VGS=0V
Typ
30
0.1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.1
ID(ON)
On state drain current
VGS=10V, VDS=5V
60
TJ=125°C
VGS=10V, ID=8.8A
20
100
nA
2.2
V
13.3
16
20
25
22
mΩ
0.5
V
3.5
A
1600
pF
A
Static Drain-Source On-Resistance
VGS=4.5V, ID=7A
18
gFS
Forward Transconductance
VDS=5V, ID=8.8A
29
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode + Schottky Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
0.41
1267
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
308
pF
118
pF
1.3
2.0
21
30
Qg(4.5V) Total Gate Charge
10.4
Gate Source Charge
Qgd
Gate Drain Charge
VGS=10V, VDS=15V, ID=8.8A
Ω
nC
nC
3
nC
3.6
nC
5.2
ns
3.8
ns
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=8.8A, dI/dt=300A/µs
11.2
Qrr
Body Diode Reverse Recovery Charge IF=8.8A, dI/dt=300A/µs
10.5
VGS=10V, VDS=15V, RL=1.7Ω,
RGEN=3Ω
mΩ
S
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
mA
1.65
RDS(ON)
TJ=125°C
Units
V
VDS=30V, VGS=0V
IDSS
Coss
Max
21.2
ns
4.4
ns
15
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
2/8
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AO4948
30V Dual N-Channel MOSFET
FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
100
10V
VDS=5V
5V
6V
25
80
4.5V
7V
20
ID(A)
ID (A)
60
4V
15
40
10
3.5V
20
5
VGS=3V
25°C
0
0
0
1
2
3
4
1
5
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
2
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
1.8
Normalized On-Resistance
20
18
RDS(ON) (mΩ
Ω)
125°C
VGS=4.5V
16
14
12
VGS=10V
10
VGS=10V
ID=8.8A
1.6
1.4
17
5
2
VGS=4.5V10
1.2
ID=7A
1
0.8
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
40
ID=8.8A
35
1.0E+01
30
1.0E+00
25
125°C
20
15
IS (A)
RDS(ON) (mΩ
Ω)
125°C
40
1.0E-01
25°C
1.0E-02
1.0E-03
25°C
10
1.0E-04
5
1.0E-05
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/8
4
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AO4948
30V Dual N-Channel MOSFET
FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2000
VDS=15V
ID=8.8A
1500
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
1000
Coss
500
2
0
5
10
15
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
25
100.0
5
10 V (Volts)
15
20
25
DS
Figure 8: Capacitance Characteristics
30
1000
1ms
10ms
TJ(Max)=150°C
TA=25°C
100
Power (W)
100µs
1.0
0.1
TA=25°C
10µs
RDS(ON)
limited
10.0
ID (Amps)
Crss
0
0
10
10s
DC
1
0.0
0.01
0.1
1
VDS (Volts)
10
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
100
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
4/8
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
100
1000
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AO4948
30V Dual N-Channel MOSFET
FET2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
ID=250µA, VGS=0V
VDS=30V, VGS=0V
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±16V
VGS(th)
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=8A
ID(ON)
Min
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS
Maximum Body-Diode Continuous Current
VGS=4.5V, ID=4A
VDS=5V, ID=8A
IS=1A,VGS=0V
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
µA
10
µA
1.8
2.4
V
15.5
19
21
25
18.6
28
mΩ
1
V
2.5
A
pF
40
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
5
1.2
Units
V
1
TJ=125°C
Static Drain-Source On-Resistance
Max
30
TJ=55°C
RDS(ON)
Coss
Typ
A
30
0.75
mΩ
S
600
740
888
77
110
145
pF
50
82
115
pF
0.5
1.1
1.7
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
12
15
18
nC
Qg(4.5V) Total Gate Charge
6
7.5
9
nC
2
2.5
3
nC
2
3
5
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
VGS=10V, VDS=15V, ID=8A
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
5
ns
3.5
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
19
ns
3.5
ns
trr
Body Diode Reverse Recovery Time
IF=8A, dI/dt=500A/µs
6
8
10
Qrr
Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs
14
18
22
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
5/8
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AO4948
30V Dual N-Channel MOSFET
FET2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
30
10V
VDS=5V
4V
25
25
3.5V
5V
20
ID(A)
ID (A)
20
3V
15
10
10
VGS=2.5V
5
125°C
5
25°C
0
0
0
1
2
3
4
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
1
5
1.5
2
2.5
3
3.5
4
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
30
Normalized On-Resistance
1.6
25
RDS(ON) (mΩ
Ω)
15
VGS=4.5V
20
15
VGS=10V
10
VGS=10V
ID=8A
1.4
17
5
VGS=4.5V
2
ID=4A
10
1.2
1
0.8
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
40
ID=8A
1.0E+01
35
40
1.0E+00
25
125°C
-IS (A)
RDS(ON) (mΩ
Ω)
30
1.0E-01
125°C
1.0E-02
20
1.0E-03
15
25°C
10
1.0E-04
1.0E-05
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
6/8
25°C
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AO4948
30V Dual N-Channel MOSFET
FET2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1200
VDS=15V
ID=8A
1000
8
Capacitance (pF)
VGS (Volts)
Ciss
6
4
800
600
400
Coss
2
200
0
0
Crss
0
3
6 g (nC)
9
12
Q
Figure 7: Gate-Charge Characteristics
0
15
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
1000
100.0
TA=25°C
10µs
RDS(ON)
100µs
1ms
10ms
1.0
0.1
DC
TJ(Max)=150°C
TA=25°C
100
Power (W)
10.0
-ID (Amps)
30
10
10s
0.0
1
0.01
0.1
1
-VDS (Volts)
10
100
0.00001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.1
0.01
PD
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
7/8
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AO4948
30V Dual N-Channel MOSFET
Gate Charge Test Circuit & W aveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & W aveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & W aveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
8/8
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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