AO4948 30V Dual N-Channel MOSFET General Description The AO4948 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. Features FET1(N-Channel) VDS= 30V FET2(N-Channel) 30V ID= 8.8A (VGS=10V) 8A (VGS=10V) RDS(ON) RDS(ON) < 16mΩ (VGS=10V) < 19mΩ (VGS=10V) < 22mΩ (VGS=4.5V) < 28mΩ (VGS=4.5V) SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Top View S1 D1 D1 D1 D2 G1 S2 G2 D2 G2 D2 G1 S2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max FET1 Drain-Source Voltage VDS 30 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current ±20 ±20 V 8.8 8 7.1 6.5 IDM 60 40 IAS, IAR 21 13 A EAS, EAR 66 25 mJ 2 2 1.3 1.3 ID TA=70°C C Avalanche energy L=0.3mH C TA=25°C PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 1/8 Units V VGS TA=25°C Avalanche Current C Power Dissipation B Max FET2 30 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL -55 to 150 Typ 48 74 32 A W °C Max 62.5 90 40 Units °C/W °C/W °C/W www.freescale.net.cn AO4948 30V Dual N-Channel MOSFET FET1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250uA, VGS=0V Typ 30 0.1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.1 ID(ON) On state drain current VGS=10V, VDS=5V 60 TJ=125°C VGS=10V, ID=8.8A 20 100 nA 2.2 V 13.3 16 20 25 22 mΩ 0.5 V 3.5 A 1600 pF A Static Drain-Source On-Resistance VGS=4.5V, ID=7A 18 gFS Forward Transconductance VDS=5V, ID=8.8A 29 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode + Schottky Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 0.41 1267 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 308 pF 118 pF 1.3 2.0 21 30 Qg(4.5V) Total Gate Charge 10.4 Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=15V, ID=8.8A Ω nC nC 3 nC 3.6 nC 5.2 ns 3.8 ns tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=8.8A, dI/dt=300A/µs 11.2 Qrr Body Diode Reverse Recovery Charge IF=8.8A, dI/dt=300A/µs 10.5 VGS=10V, VDS=15V, RL=1.7Ω, RGEN=3Ω mΩ S SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs mA 1.65 RDS(ON) TJ=125°C Units V VDS=30V, VGS=0V IDSS Coss Max 21.2 ns 4.4 ns 15 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 2/8 www.freescale.net.cn AO4948 30V Dual N-Channel MOSFET FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 100 10V VDS=5V 5V 6V 25 80 4.5V 7V 20 ID(A) ID (A) 60 4V 15 40 10 3.5V 20 5 VGS=3V 25°C 0 0 0 1 2 3 4 1 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.8 Normalized On-Resistance 20 18 RDS(ON) (mΩ Ω) 125°C VGS=4.5V 16 14 12 VGS=10V 10 VGS=10V ID=8.8A 1.6 1.4 17 5 2 VGS=4.5V10 1.2 ID=7A 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 40 ID=8.8A 35 1.0E+01 30 1.0E+00 25 125°C 20 15 IS (A) RDS(ON) (mΩ Ω) 125°C 40 1.0E-01 25°C 1.0E-02 1.0E-03 25°C 10 1.0E-04 5 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/8 4 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO4948 30V Dual N-Channel MOSFET FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2000 VDS=15V ID=8.8A 1500 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 1000 Coss 500 2 0 5 10 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics 0 25 100.0 5 10 V (Volts) 15 20 25 DS Figure 8: Capacitance Characteristics 30 1000 1ms 10ms TJ(Max)=150°C TA=25°C 100 Power (W) 100µs 1.0 0.1 TA=25°C 10µs RDS(ON) limited 10.0 ID (Amps) Crss 0 0 10 10s DC 1 0.0 0.01 0.1 1 VDS (Volts) 10 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 4/8 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 100 1000 www.freescale.net.cn AO4948 30V Dual N-Channel MOSFET FET2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±16V VGS(th) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=8A ID(ON) Min gFS Forward Transconductance VSD Diode Forward Voltage IS Maximum Body-Diode Continuous Current VGS=4.5V, ID=4A VDS=5V, ID=8A IS=1A,VGS=0V Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz µA 10 µA 1.8 2.4 V 15.5 19 21 25 18.6 28 mΩ 1 V 2.5 A pF 40 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance 5 1.2 Units V 1 TJ=125°C Static Drain-Source On-Resistance Max 30 TJ=55°C RDS(ON) Coss Typ A 30 0.75 mΩ S 600 740 888 77 110 145 pF 50 82 115 pF 0.5 1.1 1.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 12 15 18 nC Qg(4.5V) Total Gate Charge 6 7.5 9 nC 2 2.5 3 nC 2 3 5 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time VGS=10V, VDS=15V, ID=8A VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 5 ns 3.5 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 19 ns 3.5 ns trr Body Diode Reverse Recovery Time IF=8A, dI/dt=500A/µs 6 8 10 Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs 14 18 22 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 5/8 www.freescale.net.cn AO4948 30V Dual N-Channel MOSFET FET2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 10V VDS=5V 4V 25 25 3.5V 5V 20 ID(A) ID (A) 20 3V 15 10 10 VGS=2.5V 5 125°C 5 25°C 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1 5 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 30 Normalized On-Resistance 1.6 25 RDS(ON) (mΩ Ω) 15 VGS=4.5V 20 15 VGS=10V 10 VGS=10V ID=8A 1.4 17 5 VGS=4.5V 2 ID=4A 10 1.2 1 0.8 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 40 ID=8A 1.0E+01 35 40 1.0E+00 25 125°C -IS (A) RDS(ON) (mΩ Ω) 30 1.0E-01 125°C 1.0E-02 20 1.0E-03 15 25°C 10 1.0E-04 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 6/8 25°C 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO4948 30V Dual N-Channel MOSFET FET2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1200 VDS=15V ID=8A 1000 8 Capacitance (pF) VGS (Volts) Ciss 6 4 800 600 400 Coss 2 200 0 0 Crss 0 3 6 g (nC) 9 12 Q Figure 7: Gate-Charge Characteristics 0 15 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 1000 100.0 TA=25°C 10µs RDS(ON) 100µs 1ms 10ms 1.0 0.1 DC TJ(Max)=150°C TA=25°C 100 Power (W) 10.0 -ID (Amps) 30 10 10s 0.0 1 0.01 0.1 1 -VDS (Volts) 10 100 0.00001 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 0.01 PD Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 7/8 www.freescale.net.cn AO4948 30V Dual N-Channel MOSFET Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & W aveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & W aveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 8/8 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn