SHENZHENFREESCALE AO6804A

AO6804A
20V Dual P-Channel MOSFET
General Description
The AO6804A uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications.
Product Summary
VDS = 20V
ID = 5.0A
(VGS = 4.5V)
RDS(ON) < 28mΩ (VGS = 4.5V)
RDS(ON) < 30mΩ (VGS = 4.0V)
RDS(ON) < 34mΩ (VGS = 3.1V)
RDS(ON) < 39mΩ (VGS = 2.5V)
D1
11
Top View
S1
1
6
G1
D2
11
Rg
D1/D2
2
5
D1/D2
S2
3
4
G2
Rg
G2
G1
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
Gate-Source Voltage
TA=25°C
Continuous Drain
A
Current
Pulsed Drain Current
Power Dissipation A
B
TA=25°C
Junction and Storage Temperature Range
1/5
C
±12
V
ID
4
IDM
25
W
0.8
TJ, TSTG
Symbol
t ≤ 10s
Steady State
Steady State
A
1.3
PD
TA=70°C
Maximum Junction-to-Lead
Units
V
5
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
A
Maximum Junction-to-Ambient
20
Maximum
VGS
S2
RθJA
RθJL
-55 to 150
Typ
76
118
54
°C
Max
95
150
68
Units
°C/W
°C/W
°C/W
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AO6804A
20V Dual P-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID = 250µA, VGS = 0V
TJ = 55°C
5
±10
υA
1
V
18
23
28
26
33
40
VGS = 4.0V, ID = 4.5A
19
24
30
mΩ
VGS = 3.1V, ID = 4.5A
20
27
34
mΩ
VGS = 2.5V, ID = 4.0A
21
30
39
mΩ
1
V
1.3
A
225
pF
VDS = 0V, VGS = ±10V
Gate Threshold Voltage
VDS = VGS ID = 250µA
0.5
ID(ON)
On state drain current
VGS = 4.5V, VDS = 5V
25
VGS = 4.5V, ID = 5.0A
TJ=125°C
gFS
Forward Transconductance
VDS = 5V, ID = 5.0A
VSD
Diode Forward Voltage
IS = 1A,VGS = 0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
µA
0.7
Gate-Body leakage current
Crss
Units
V
1
IGSS
Static Drain-Source On-Resistance
Max
20
VDS = 20V, VGS = 0V
VGS(th)
RDS(ON)
Typ
A
18
0.65
180
VGS=0V, VDS=10V, f=1MHz
mΩ
S
95
pF
18
pF
VGS=0V, VDS=0V, f=1MHz
2.7
4
5.6
7.5
VGS= 4.5V, VDS= 10V, ID= 5A
0.85
nC
SWITCHING PARAMETERS
Total Gate Charge
Qg
kΩ
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
1.7
nC
tD(on)
Turn-On DelayTime
172
ns
tr
Turn-On Rise Time
368
ns
tD(off)
Turn-Off DelayTime
2.94
υs
tf
trr
Qrr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
VGS=10V, VDS=10V, RL=2.0Ω,
RGEN=3Ω
IF=5A, dI/dt=100A/µs
I
Body Diode Reverse Recovery Charge F=5A, dI/dt=100A/µs
2.5
32
3.2
43
υs
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. in
any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using < 300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
Rev2: Nov. 2010
2/5
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AO6804A
20V Dual P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
25
4.5V
3V
20
VDS= 5V
2.5V
20
1.8V
15
ID(A)
ID (A)
15
2V
10
10
5
25°C
5
VGS=1.5V
125°C
-40°C
0
0
0
1
2
3
4
5
0
0.5
32
1.5
2
2.5
3
Normalized On-Resistance
1.6
30
VGS= 2.5V
RDS(ON) (mΩ )
1
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Figure 1: On-Region Characteristics
28
VGS= 3.1V
26
24
VGS= 4.0V
VGS= 4.5V
ID= 5A
1.4
1.2
1.0
0.8
VGS= 4.5V
22
0.6
0
2
4
I6F=-6.5A, 8dI/dt=100A/µs
10
-50
80
0
25
50
75
100 125 150 175
1E+01
ID= 5.0A
1E+00
70
1E-01
IS (A)
60
RDS(ON) (mΩ )
-25
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
125°C
1E-02
1E-03
25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
40
125°C
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
AOS DOES NOT ASSUME ANY LIABILITY ARISING
1E-04
-40°C
OUT OF
PRODUCT DESIGN,
30 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
25°C
1E-05
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
20
1E-06
-40°C
10
1
3/5
2
3
4
5
6
7
8
9
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO6804A
20V Dual P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
5
VDS= 10V
ID= 5A
Capacitance (pF)
VGS (Volts)
4
3
2
Ciss
100
Coss
Crss
1
0
10
0
1
2
3
4
5
6
7
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
1000
100
TJ(Max)=150°C
TA=25°C
10µs
ID (Amps)
100µs
1
RDS(ON)
limited
1ms
10ms
100ms
100
Power (W)
10
0.1
1
TJ(Max)=150°C
TA=25°C
DC
0.01
0.1
10s
0.1
0.00001
dI/dt=100A/µs
IF=-6.5A,
10
100
1
VDS (Volts)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=150°C/W
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
PD
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH
0.01APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY
WITHOUT
Single
Pulse NOTICE.
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
4/5
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AO6804A
20V Dual P-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
Vgs
10%
Vgs
td(on)
tr
td(off)
ton
tf
toff
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
5/5
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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