Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2N3055
NPN SILICON TRANSISTOR
SILICON NPN TRANSISTORS

DESCRIPTION
The UTC 2N3055 is a silicon NPN transistor in TO-3 metal
case. It is intended for power switching circuits, series and shunt
regulators, output stages and high fidelity amplifiers.

ORDERING INFORMATION
Ordering Number
2N3055L-T30-Y
Note: Pin Assignment: B: Base E: Emitter

MARKING

PIN CONFIGURATION
Package
TO-3
Pin Assignment
1
2
3
E
B
C
Packing
Tray
C: Case
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2N3055

NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS ( TA=25C ,unless otherwise specified )
PARAMETERS
SYMBOL
VALUE
UNITS
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
7
V
Collector-Emitter Voltage
VCEV
70
V
Collector Current
IC
15
A
Collector Peak Current(1)
ICM
15
A
Base Current
IB
7
A
Base Peak Current(1)
IBM
15
A
Total Dissipation at TA=25C
PD
115
W
Max. Operating Junction Temperature
TJ
200
C
Storage Temperature
TSTG
-65 to 200
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Collector-Emitter Sustaining
Voltage
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
SYMBOL
Collector Cut-off Current (TA=150C)
ICEX
Emitter Cut-off Current
ON CHARACTERISTICS
IEBO
DC Current Gain(note)
hFE
Collector-Emitter Saturation Voltage
TEST CONDITIONS
VCEO(sus)
IC=200mA, IB=0V
60
VCER(sus)
ICEO
IC=0.2 A, RBE=100 Ohms
VCE=30V, IB=0
VCE=100V, VBE(off)=1.5V
VCE=100V, VBE(off)=1.5V
VBE=7V, IC=0
70
IC=4A, VCE=4V
IC=10A, VCE=4V
IC=4A, IB=400mA
IC=10A, IB=3.3A
IC=4A, VCE=4V
20
5
VCE(sat)
Base-Emitter On Voltage
VBE(on)
SECOND BREAKDOWN
Second Breakdown Collector with
Is/b
VCE=60V, T=1.0s, Non-repetitive
Base Forward Biased
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product
fT
IC=0.5A, VCE=10V, f=1MHz
Small-Signal Current Gain
hFE
IC=1A, VCE=4V, f=1kHz
Small-Signal Current Gain
fHFE
IC=1A, VCE=4V, f=1.0kHz
Cut-off Frequency
Note: Pulse Test: Puls Width ≤ 300μs, Duty Cycle ≤ 2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
V
0.7
1.0
5.0
5.0
70
1.1
3.0
1.5
2.87
2.5
15
10
V
mA
mA
mA
mA
V
V
V
A
MHz
120
kHz
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2N3055
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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