BDX64 – A – B – C PNP SILICON DARLINGTON POWER TRANSISTOR The BDX64, BDX64A, BDX64B and BDX64C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary NPN are BDX65, BDX65A, BDX65B, BDX65C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCEV Collector-EmitterVoltage VEBO Emitter-Base Voltage IC Collector Current IB PT TJ TS Base Current Power Dissipation Junction Temperature Storage Temperature VBE=-1.5 V Value BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C IC(RMS) ICM @ TC = 25° Unit -60 -80 -100 -120 -60 -80 -100 -120 -5.0 -12 -16 0.2 117 A W -55 to +200 °C Value Unit 1.5 °C/W V V V A THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case 24/10/2012 COMSET SEMICONDUCTORS 1|4 BDX64 – A – B – C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Collector-Emitter Breakdown Voltage (*) IC=-0.1 A IB=0 L=25mH ICEO Collector Cutoff Current VCE=-30 V VCE=-40 V VCE=-50 V VCE=-60 V IEBO Emitter Cutoff Current VBE=-5 V VCEO(SUS) BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C VCBO=-60 V VCBO=-40 V TCASE=200°C ICBO Collector-Base Cutoff Current VCE(SAT) Collector-Emitter saturation Voltage (*) IC=-5.0 A IB=-20 mA VF Forward Voltage (pulse method) IF=5 A VBE Base-Emitter Voltage (*) IC=-5.0 A VCE=-3V 24/10/2012 Unit -60 -80 -100 -120 - - - V -1.0 mA - - -5.0 mA - - 0.2 - - 2 - - 0.2 - - 2 - - 0.2 - - 2 - - 0.2 BDX64B VCBO=-120 V VCBO=-70 V TCASE=200° Max BDX64A VCBO=-100 V VCBO=-60 V TCASE=200°C Typ BDX64 VCBO=-80 V VCBO=-50 V TCASE=200°C Min BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C COMSET SEMICONDUCTORS - 2 - - -2 V - 1.8 - V - - -2.5 V 2|4 BDX64 – A – B – C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Fhfe Cut-off frequency -VCE=3 V -IC=5 A fT Transition Frequency VCE=-3 V IC=-5 A f=1 MHz -VCE=-3 V -IC=-1 A hFE -VCE=-3 V -IC=-5 A D.C. current gain (*) -VCE=-3 V -IC=-12 A BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C Min Typ Max Unit - 80 - kHz - 7 - MHz - 1500 - 1000 - - - 750 - - (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 24/10/2012 COMSET SEMICONDUCTORS 3|4 BDX64 – A – B – C MECHANICAL DATA CASE TO-3 DIMENSIONS (mm) A B C D F G N P R U V min max 11 0.97 1.5 8.32 19 10.70 16.50 25 4 38.50 30 13.10 1.15 1.65 8.92 20 11.1 17.20 26 4.09 39.30 30.30 Pin 1 : Pin 2 : Case : Base Emitter Collector Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 24/10/2012 [email protected] COMSET SEMICONDUCTORS 4|4