UTC-IC 2N2955

UTC 2N2955
SILICON PNP TRANSISTOR
SILICON PNP TRANSISTORS
The UTC 2N2955 is a silicon PNP transistor in TO-3
metal case. It is intended for power switching circuits,
series and shunt regulators, output stages and high fidelity
amplifiers.
TO-3
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETERS
SYMBOL
VALUE
UNITS
VCBO
VCEO
VEBO
VCEV
Ic
ICM
IB
IBM
Ptot
TSTG
Tj
100
60
7
70
15
15
7
15
115
-65 to 200
200
V
V
V
V
A
A
A
A
W
°C
°C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current(1)
Base Current
Base Peak Current(1)
Total Dissipation at Ta=25°C
Storage Temperature
Max. Operating Junction Temperature
ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Collector-Emitter Sustaining
Voltage
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
ON CHARACTERISTICS
DC Current Gain(note)
Collector-Emitter Saturation Voltage
UTC
SYMBOL
TEST CONDITIONS
MIN
VCEO(sus)
Ic=200mA, IB=0V
60
VCER(sus)
ICEO
ICEX
Ic=0.2 A, RBE=100 Ohms
VCE=30V,IB=0
VCE=100V,VBE(off)=1.5V.
VCE=100V,VBE(off)=1.5V,
Ta=150°C
VBE=7V,IC=0
70
Ic=4A,VCE=4V,
Ic=10A,VCE=4V
Ic=4A,IB=400mA
Ic=10A,IB=3.3A
20
5
IEBO
hFE
VCE(sat)
UNISONIC TECHNOLOGIES
TYP
MAX
UNIT
V
0.7
1.0
5.0
5.0
V
mA
mA
mA
70
1.1
3.0
CO. LTD
V
1
QW-R205-004,A
UTC 2N2955
SILICON PNP TRANSISTOR
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Base-Emitter On Voltage
VBE(on)
Ic=4A,VCE=4V
SECOND BREAKDOWN
Second Breakdown Collector with
Is/b
VCE=60V,T=1.0s, Non-repetitive 2.87
Base Forward Biased
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product
fT
Ic=0.5A,VCE=10V,f=1MHz
2.5
Small-Signal Current Gain
hFE
Ic=1A,VCE=4V,f=1kHz
15
Small-Signal Current Gain
fHFE
Ic=1A,VCE=4V
10
Cut-off Frequency
F=1.0kHz
Note(1):Pulse Test: Puls Width<=300µs, Duty Cycle<=2%
UTC
UNISONIC TECHNOLOGIES
TYP
MAX
UNIT
1.5
V
A
MHz
120
kHz
CO. LTD
2
QW-R205-004,A