AOS Semiconductor Product Reliability Report AOD482, rev C Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOD482. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOD482 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: The AOD482 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. -RoHS Compliant -Halogen Free Details refer to the datasheet. II. Die / Package Information: AOD482 Standard sub-micron 100V N channel MOSFET Package Type 3 leads TO252 Lead Frame Bare Cu Die Attach Soft solder Bond wire Al wire Mold Material Epoxy resin with silica filler Moisture Level Up to Level 1 * Note * based on info provided by assembler and mold compound supplier Process 2 III. Result of Reliability Stress for AOD482 Test Item Test Condition Time Point MSL Precondition 168hr 85°c /85%RH +3 cycle reflow@260°c Temp = 150°c , Vgs=100% of Vgsmax - HTGB HTRB HAST Pressure Pot Temperature Cycle Temp = 150°c , Vds=80% of Vdsmax 168hrs 500 hrs 1000 hrs 168hrs 500 hrs 1000 hrs Lot Attribution 15 lots 5 lots 2 lots (Note A*) Total Sample size 0 JESD22A113 539pcs 0 JESD22A108 0 JESD22A108 550pcs 0 JESD22A110 0 JESD22A102 0 JESD22A104 77 pcs / lot 77 pcs / lot 130 +/- 2°c , 85%RH, 33.3 psi, Vgs = 100% of Vgs max 121°c , 29.7psi, RH=100% 100 hrs 10 lots 96 hrs (Note A*) 12 lots 55 pcs / lot 924pcs (Note A*) 77 pcs / lot -65°c to 150°c , air to air, 250 / 500 cycles 15 lots (Note A*) Reference Standard 2629pcs 539pcs 5 lots 2 lots (Note A*) Number of Failures 1155pcs 77 pcs / lot Note A: The reliability data presents the available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 5 MTTF = 27263 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion device hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] 9 = 1.83 x 10 / [2x (5x2x77x500 +2x2x77x1000) x (258)] = 5 9 8 MTTF = 10 / FIT = 1.95 x 10 hrs = 22306 years Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C Tuse Af 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 3