AOD482/AOI482 100V N-Channel MOSFET General Description Product Summary The AOD482/AOI482 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 100V 32A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 37mΩ RDS(ON) (at VGS = 4.5V) < 42mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK TopView Top View Bottom View TO-251A IPAK D Bottom View D D D S D G G S S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C Pulsed Drain Current C Continuous Drain Current TA=25°C Maximum 100 Units V ±20 V 22 IDM A 70 5 IDSM TA=70°C S D 32 ID TC=100°C G D A 4 Avalanche Current C IAS, IAR 35 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 61 mJ Power Dissipation B TC=100°C Power Dissipation A TA=70°C TA=25°C Rev 2 : July 2011 2.5 Steady-State Steady-State RθJA RθJC W 1.6 TJ, TSTG Symbol t ≤ 10s W 50 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 100 PD -55 to 175 Typ 14.2 39 0.8 www.aosmd.com °C Max 20 50 1.5 Units °C/W °C/W °C/W Page 1 of 6 AOD482/AOI482 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 Typ Max V VDS=100V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.6 ID(ON) On state drain current VGS=10V, VDS=5V 70 TJ=55°C µA 5 VDS=0V, VGS= ±20V 100 VGS=10V, ID=10A 2.1 2.7 30 37 63 76 VGS=4.5V, ID=10A 32 42 VDS=5V, ID=10A 45 Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance nA V A RDS(ON) TJ=125°C Units mΩ mΩ S 1 V 54 A pF 1300 1630 2000 70 100 130 pF 30 50 70 pF 0.3 0.75 1.1 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 26 34 44 nC Qg(4.5V) Total Gate Charge 14 18 22 nC 4 6 8 nC 9 13 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=50V, ID=10A 5 VGS=10V, VDS=50V, RL=5Ω, RGEN=3Ω 7 ns 7 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/µs 22 32 42 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 140 200 260 29 ns 7 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2 : July 2011 www.aosmd.com Page 2 of 6 AOD482/AOI482 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 VDS=5V 10V 40 40 7V 3.5V 4V 30 ID(A) ID (A) 30 20 20 10 125°C 10 VGS=3V 25°C 0 0 0 1 2 3 4 1 5 2 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 50 4 5 Normalized On-Resistance 2.8 45 RDS(ON) (mΩ ) 3 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 40 VGS=4.5V 35 30 VGS=10V 25 VGS=10V ID=10A 2.4 2 1.6 VGS=4.5V ID=10A 1.2 17 5 2 10 0.8 20 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 80 1.0E+02 ID=10A 1.0E+01 70 40 125°C IS (A) RDS(ON) (mΩ ) 1.0E+00 60 50 1.0E-01 125°C 1.0E-02 40 25°C 1.0E-03 30 1.0E-04 25°C 1.0E-05 20 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 2 : July 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOD482/AOI482 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 VDS=50V ID=10A 2500 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 2000 1500 1000 Crss 500 0 Coss 0 0 5 10 15 20 25 30 35 Qg (nC) Figure 7: Gate-Charge Characteristics 40 0 20 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 200 100.0 TJ(Max)=175°C TC=25°C 10µs 10µs 100µs RDS(ON) limited 1.0 DC 160 1ms 10ms Power (W) 10.0 ID (Amps) 100 TJ(Max)=175°C TC=25°C 0.1 17 5 2 10 120 80 0.0 40 0.01 0.1 1 10 VDS (Volts) 100 1000 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.5°C/W 1 0.1 PD Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 2 : July 2011 www.aosmd.com Page 4 of 6 AOD482/AOI482 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 TA=25°C TA=100°C 100 Power Dissipation (W) IAR (A) Peak Avalanche Current 100 TA=150°C 10 TA=125°C 80 60 40 20 1 0 1 10 100 1000 µs) Time in avalanche, tA (µ Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note F) 10000 40 1000 30 Power (W) Current rating ID(A) TA=25°C 20 17 5 2 10 100 10 10 1 0.00001 0 0 25 50 75 100 125 150 0.001 0.1 10 1000 0 18 175 TCASE (°C) Figure 14: Current De-rating (Note F) Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=50°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 2 : July 2011 www.aosmd.com Page 5 of 6 AOD482/AOI482 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 2 : July 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6