Datasheet

AOD484
30V N-Channel MOSFET
General Description
Features
The AOD484 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
VDS (V) = 30V
ID = 25 A (VGS = 10V)
RDS(ON) < 15 mΩ (VGS = 10V)
RDS(ON) < 23 mΩ (VGS = 4.5V)
100% UIS Tested
100% Rg Tested
TO252
DPAK
Top View
D
Bottom View
D
D
G
S
S
G
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current G
VGS
TC=25°C
TC=100°C
Avalanche Current C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
C
V
ID
20
80
IAR
15
A
EAR
33
mJ
2.1
W
1.3
-55 to 175
Symbol
Alpha & Omega Semiconductor, Ltd.
W
25
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
A
50
PDSM
Junction and Storage Temperature Range
Maximum Junction-to-Case B
±20
IDM
PD
TA=25°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Units
V
25
Pulsed Drain Current C
Repetitive avalanche energy L=0.3mH
TC=25°C
Maximum
30
RθJA
RθJC
Typ
17
55
2.3
°C
Max
25
60
3
Units
°C/W
°C/W
°C/W
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AOD484
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250uA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
80
TJ=55°C
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=15A
5
±100
nA
2.5
V
12.1
15
A
19
18.5
Forward Transconductance
VDS=5V, ID=20A
26
VSD
Diode Forward Voltage
IS=1A, VGS=0V
0.71
IS
Maximum Body-Diode Continuous Current
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
938
VGS=0V, VDS=15V, f=1MHz
µA
1.5
gFS
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Units
V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
30
VDS=24V, VGS=0V
IDSS
RDS(ON)
Typ
mΩ
23
mΩ
1
V
21
A
S
1220
pF
142
pF
99
pF
1.2
1.8
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
17.5
21
nC
Qg(4.5V) Total Gate Charge
8.4
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
3
nC
4.1
nC
5
ns
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
12
ns
19
ns
6
ns
IF=20A, dI/dt=100A/µs
19
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
10
21
12
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
25 s it.
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and
25is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
60
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
30
a maximum junction temperature of TJ(MAX)=175°C.
2.5
G. The maximum current is limited by package.
1.6air environment with TA=25°C. The SOA
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev5: Aug. 2009
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AOD484
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
20
8V
10V
70
VDS=5V
4.5V
60
15
6V
ID(A)
ID (A)
50
40
30
10
125°C
3.5V
25°C
5
20
VGS=3V
-40°C
10
0
0
0
1
2
3
4
0
5
0.5
25
1.5
2
2.5
Normalized On-Resistance
VGS=4.5V
15
10
3
3.5
500
150
60
1.6
20
RDS(ON) (mΩ )
1
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Figure 1: On-Region Characteristics
VGS=10V
5
VGS=10V
ID=20A
1.4
1.2
VGS=4.5V
ID=15A
1
0.8
0
0
4
8
12
16
0.6
20
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-25
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
40
1.0E+01
ID=20A
1.0E+00
35
1.0E-01
125°C
IS (A)
RDS(ON) (mΩ )
30
125°C
25
25°C
1.0E-02
-40°C
1.0E-03
20
1.0E-04
25°C
15
1.0E-05
10
0.0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOD484
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
10
Ciss
Capacitance (pF)
VGS (Volts)
1200
VDS=20V
ID=20A
8
6
4
1000
800
600
Coss
400
Crss
2
200
0
0
5
10
15
0
20
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000.0
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
TJ(Max)=175°C
TC=25°C
10.0
DC
1ms
10ms
TJ(Max)=175°C, T C=25°C
1.0
Power (W)
10µs
100µs
120
80
40
0
0.0001
0.1
0.1
1
30
500
150
60
160
100.0
ID (Amps)
10
200
RDS(ON)
limited
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Zθ JC Normalized Transient
Thermal Resistance
5
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3°C/W
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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AOD484
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
30
L ⋅ ID
BV − VDD
25
TA=25°C
tA =
35
20
Power Dissipation (W)
ID(A), Peak Avalanche Current
40
TA=150°C
15
10
30
20
10
5
0
0.000001
0
0.00001
0.0001
0.001
0
25
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
50
75
100
30
150
175
500
150
60
40
TA=25°C
25
30
20
Power (W)
Current rating ID(A)
125
TCASE (°C)
Figure 13: Power De-rating (Note B)
15
20
10
10
5
0
0.001
0
0
25
50
75
100
125
150
175
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
TCASE (°C)
Figure 14: Current De-rating (Note B)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PD
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
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AOD484
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
Vgs
Vgs
+ Vdd
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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