AOD484 30V N-Channel MOSFET General Description The AOD484 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Features VDS (V) = 30V ID = 25 A (VGS = 10V) RDS(ON) < 15 mΩ (VGS = 10V) RDS(ON) < 23 mΩ (VGS = 4.5V) D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain G Current TC=100°C C Repetitive avalanche energy L=0.3mH TC=25°C Power Dissipation B C A Junction and Storage Temperature Range Maximum Junction-to-Case 1/6 B V ID 20 80 IAR 15 A EAR 33 mJ W 25 2.1 W 1.3 -55 to 175 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State A 50 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient ±20 IDM PD TC=100°C TA=25°C Power Dissipation Units V 25 Pulsed Drain Current C Avalanche Current Maximum 30 RθJA RθJC Typ 17 55 2.3 °C Max 25 60 3 Units °C/W °C/W °C/W www.freescale.net.cn AOD484 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250uA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 80 TJ=55°C VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=15A 5 ±100 nA 2.5 V 12.1 15 A 19 18.5 Forward Transconductance VDS=5V, ID=20A 26 VSD Diode Forward Voltage IS=1A, VGS=0V 0.71 IS Maximum Body-Diode Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 938 VGS=0V, VDS=15V, f=1MHz µA 1.5 gFS DYNAMIC PARAMETERS Ciss Input Capacitance Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=24V, VGS=0V IDSS RDS(ON) Typ mΩ 23 mΩ 1 V 21 A S 1220 pF 142 pF 99 pF 1.2 1.8 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 17.5 21 nC Qg(4.5V) Total Gate Charge 8.4 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 3 nC 4.1 nC 5 ns VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 12 ns 19 ns 6 ns IF=20A, dI/dt=100A/µs 19 Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 10 21 12 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends 25 s it. on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and 25is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. 60 F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming 30 a maximum junction temperature of TJ(MAX)=175°C. 2.5 G. The maximum current is limited by package. 1.6air environment with TA=25°C. The SOA H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still curve provides a single pulse rating. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev5: Aug. 2009 2/6 www.freescale.net.cn AOD484 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 20 8V 10V 70 VDS=5V 4.5V 60 15 6V ID(A) ID (A) 50 40 30 10 125°C 3.5V 25°C 5 20 VGS=3V -40°C 10 0 0 0 1 2 3 4 0 5 0.5 25 1.5 2 2.5 Normalized On-Resistance VGS=4.5V 15 10 3 3.5 500 150 60 1.6 20 RDS(ON) (mΩ ) 1 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics VGS=10V 5 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=15A 1 0.8 0 0 4 8 12 16 0.6 20 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 40 1.0E+01 ID=20A 1.0E+00 35 1.0E-01 125°C IS (A) RDS(ON) (mΩ ) 30 125°C 25 25°C 1.0E-02 -40°C 1.0E-03 20 1.0E-04 25°C 15 1.0E-05 10 0.0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/6 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AOD484 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 10 Ciss Capacitance (pF) VGS (Volts) 1200 VDS=20V ID=20A 8 6 4 1000 800 600 Coss 400 Crss 2 200 0 0 5 10 15 0 20 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000.0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=175°C TC=25°C 10.0 DC 1ms 10ms TJ(Max)=175°C, T C=25°C 1.0 Power (W) 10µs 100µs 120 80 40 0 0.0001 0.1 0.1 1 30 500 150 60 160 100.0 ID (Amps) 10 200 RDS(ON) limited 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 Zθ JC Normalized Transient Thermal Resistance 5 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3°C/W 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AOD484 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 30 L ⋅ ID BV − VDD 25 TA=25°C tA = 35 20 Power Dissipation (W) ID(A), Peak Avalanche Current 40 TA=150°C 15 10 30 20 10 5 0 0.000001 0 0.00001 0.0001 0.001 0 25 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 50 75 100 30 150 175 500 150 60 40 TA=25°C 25 30 20 Power (W) Current rating ID(A) 125 TCASE (°C) Figure 13: Power De-rating (Note B) 15 20 10 10 5 0 0.001 0 0 25 50 75 100 125 150 175 Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note B) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PD Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AOD484 30V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id Vgs Vgs + Vdd I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig 6/6 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn