AOD420 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD420 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS (V) = 30V ID = 10A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 42mΩ (VGS = 4.5V) -RoHS Compliant -Halogen Free* 100% UIS Tested! 100% Rg Tested! TO-252 D-PAK Top View D Bottom View D G S S G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Maximum 30 Units V ±20 V 10 TC=100°C ID 10 IDM 30 Avalanche Current C IAR 15 A Repetitive avalanche energy L=0.1mH C TC=25°C EAR 36 mJ Pulsed Drain Current C Power Dissipation B TC=100°C Power Dissipation A TA=70°C TA=25°C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case B 60 PD 2.5 TJ, TSTG A t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. W 1.6 -55 to 175 Symbol A W 30 PDSM Junction and Storage Temperature Range A RθJA RθJC Typ 16.7 40 1.9 °C Max 25 50 2.5 Units °C/W °C/W °C/W www.aosmd.com AOD420 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 30 5 Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1 On state drain current VGS=4.5V, VDS=5V 40 VGS=10V, ID=10A 100 nA 3 V 21 28 31 40 42 A Static Drain-Source On-Resistance VGS=4.5V, ID=7A 32.5 gFS Forward Transconductance VDS=5V, ID=10A 15.6 VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance 710 VGS=0V, VDS=15V, f=1MHz mΩ 1 V 10 A 850 pF 120 1.1 mΩ S pF 72 VGS=0V, VDS=0V, f=1MHz µA 1.8 RDS(ON) Crss Units 1 TJ=55°C IGSS Coss Max V VDS=24V, VGS=0V VGS(th) ID(ON) Typ pF 3.6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 14.4 18 nC Qg(4.5V) Total Gate Charge 7 8.4 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, ID=10A VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω 2.6 nC 2.7 nC 5.6 ns 2.4 ns 15.6 ns 2.2 ns trr Body Diode Reverse Recovery Time IF=10A, dI/dt=100A/µs 13.4 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs 4.4 21 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any a given application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev5: Oct 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 20 10V 5V 7V 40 VDS=5V 16 4.5V 30 12 ID(A) ID (A) 4V 125°C 8 20 VGS=3.5V 10 25°C 4 3.0V 0 0 0 1 2 3 4 1.5 5 2 50 3.5 4 1.8 Normalized On-Resistance 45 40 RDS(ON) (mΩ ) 3 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 35 VGS=4.5V 30 25 20 VGS=10V 15 10 ID=10A 1.6 VGS=10V 1.4 VGS=4.5V 1.2 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1.0E+01 1.0E+00 50 ID=10A 1.0E-01 40 IS (A) RDS(ON) (mΩ ) 2.5 125°C 125°C 1.0E-02 25°C 30 25°C 1.0E-03 20 1.0E-04 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOD420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 VDS=15V ID=10A 800 Capacitance (pF) VGS (Volts) 8 6 4 2 600 400 Coss 0 0 4 8 12 16 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 60 RDS(ON) limited 1ms 10ms 10.0 100µs 0.1s 1s 1.0 10s TJ(Max)=150°C TA=25°C 1 10 1 20 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) D=Ton/T TJ,PK =TA+PDM.ZθJA.RθJA RθJA=50°C/W 30 0 0.001 100 VDS (Volts) 10 40 10 DC 0.1 0.1 TJ(Max)=150°C TA=25°C 50 Power (W) ID (Amps) Crss 200 0 Zθ JA Normalized Transient Thermal Resistance Ciss 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD420 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com