Datasheet

AOD609
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
The AOD609 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low gate
charge. The complementary MOSFETs may be used
in H-bridge, Inverters and other applications.
n-channel
VDS (V) = 40V, ID = 12A (VGS=10V)
RDS(ON)< 30mΩ (VGS=10V)
RDS(ON)< 40mΩ (VGS=4.5V)
p-channel
VDS (V) = -40V, ID = -12A (VGS=-10V)
RDS(ON)< 45mΩ (VGS= -10V)
RDS(ON)< 66mΩ (VGS= -4.5V)
100% UIS Tested!
100% Rg Tested!
-RoHS Compliant
-Halogen Free*
Top View
TO-252-4L
D-PAK
D1/D2
Bottom View
Top View
Drain Connected to
Tab
D1/D2
G1
S2
S1
G1
S2
n-channel
p-channel
Absolute Maximum Ratings T A=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
VDS
Drain-Source Voltage
40
V
Gate-Source Voltage
±20
GS
Continuous Drain
Current B,H
TC=25°C
TC=100°C
G2
S1
G2
Max p-channel
-40
V
±20
12
-12
12
-12
30
-30
Pulsed Drain Current B
ID
IDM
Avalanche Current C
IAR
14
-20
Repetitive avalanche energy L=0.1mHC
EAR
9.8
20
27
30
14
15
2
2
1.3
1.3
-55 to 175
-55 to 175
Power Dissipation
Power Dissipation
TC=25°C
TC=100°C
TA=25°C
TA=70°C
Junction and Storage Temperature Range
PD
PDSM
TJ, TSTG
Thermal Characteristics: n-channel and p-channel
Parameter
t ≤ 10s
Maximum Junction-to-Ambient A,D
Steady-State
Maximum Junction-to-Ambient A,D
Steady-State
Maximum Junction-to-Lead C
t ≤ 10s
Maximum Junction-to-Ambient A,D
Steady-State
Maximum Junction-to-Ambient A,D
Steady-State
Maximum Junction-to-Lead C
Alpha & Omega Semiconductor, Ltd.
Symbol
RθJA
RθJC
RθJA
RθJC
Units
V
A
mJ
W
W
°C
Device
n-ch
n-ch
n-ch
Typ
17.4
50
4
Max
25
60
5.5
Units
°C/W
°C/W
°C/W
p-ch
p-ch
p-ch
16.7
50
3.5
25
60
5
°C/W
°C/W
°C/W
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AOD609
N Channel Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250µA, VGS=0V
1
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.7
ID(ON)
On state drain current
VGS=10V, VDS=5V
30
TJ=55°C
±100
3
24
30
37
46
VGS=4.5V, I D=8A
31
40
VDS=5V, ID=12A
25
VGS=10V, I D=12A
TJ=125°C
gFS
Forward Transconductance
VSD
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge
Qgs
Gate Source Charge
5
2.5
Static Drain-Source On-Resistance
nA
V
mΩ
S
0.76
516
VGS=0V, VDS=20V, f=1MHz
µA
A
1
V
2
A
650
pF
82
pF
43
pF
Ω
VGS=0V, VDS=0V, f=1MHz
4.6
6.9
VGS=10V, VDS=20V,
ID=12A
8.3
10.8
2.3
nC
1.6
nC
6.4
ns
3.6
ns
16.2
ns
6.6
ns
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=12A, dI/dt=100A/µs
18
Body Diode Reverse Recovery Charge
IF=12A, dI/dt=100A/µs
10
Qrr
Units
V
VDS=40V, VGS=0V
Zero Gate Voltage Drain Current
IS
Max
40
IDSS
RDS(ON)
Typ
VGS=10V, VDS=20V, RL=1.4Ω,
RGEN=3Ω
24
nC
ns
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are based
on TJ(MAX)=150°C, using the steady state junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation lim
for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep ST
1 2008).
Rev4: Aug 2009
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD609
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
30
30
10V
5V
25
VDS=5V
25
4.5V
20
4V
ID(A)
ID (A)
20
15
10
15
125°C
10
VGS=3.5V
25°C
5
5
0
0
1
2
3
4
0
5
2
VDS (Volts)
Fig 1: On-Region Characteristics
3
3.5
4
4.5
VGS(Volts)
Figure 2: Transfer Characteristics
36
1.8
34
Normalized On-Resistance
VGS=4.5V
32
RDS(ON) (mΩ)
2.5
30
28
VGS=10V
26
24
22
20
1.6
VGS=10V
ID=12A
1.4
1.2
VGS=4.5V
ID=8A
1
0.8
0.6
0
5
10
15
20
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-25
0
25
50
75
100
125
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
90
100
ID=12A
10
1
125°C
50
25°C
30
IS (A)
RDS(ON) (mΩ)
70
0.1
125°C
25°C
0.01
0.001
0.0001
0.0
10
3
4
5
6
7
8
9
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOD609
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
800
10
VDS=20V
ID= 12A
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
600
400
Crss
200
Coss
0
0
0
2
4
6
8
0
10
10
20
30
40
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000
100
TJ(Max)=150°C
TA=25°C
10µs
100µs
1
RDS(ON)
limited
0.1
TJ(Max)=150°C
TA=25°C
1ms
10ms
0.1s
1s
10s
DC
100
Power (W)
ID (Amps)
10
0.01
0.1
1
10
10
1
0.00001
100
VDS (Volts)
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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AOD609
G ate C harge Test C ircuit & W ave form
Vgs
Qg
10V
+
+ V ds
VDC
-
Qgd
Qgs
V DC
-
DU T
Vgs
Ig
C harge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (U IS) Test Circuit & W aveform s
L
2
E AR = 1/2 LIAR
Vds
BVD SS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VD C
-
Rg
Id
DU T
Vgs
Vgs
D iode R ecovery Test C ircuit & W aveform s
Q rr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
L
Isd
+ Vdd
Alpha & Omega Semiconductor, Ltd.
-
t rr
dI/dt
I RM
Vdd
VD C
Ig
IF
Vds
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AOD609
P-Channel Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID= -250µA, VGS=0V
-40
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID= -250µA
-1.7
On state drain current
VGS= -10V, VDS= -5V
-30
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS= -1A,VGS=0V
Maximum Body-Diode Continuous Current
Output Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg (-10V) Total Gate Charge
Qg (-4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Qrr
nA
-3
V
A
36
45
65
VGS= -4.5V, I D= -8A
51
66
VDS= -5V, I D= -12A
22
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
-2
±100
52
VGS= -10V, I D= -12A
-0.76
900
VGS=0V, VDS= -20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS= -10V, VDS= -20V,
ID= -12A
µA
-5
VGS(th)
Crss
Units
V
TJ=55°C
ID(ON)
Coss
Max
-1
VDS= -40V, VGS=0V
IDSS
IS
Typ
mΩ
S
-1
V
-2
A
1125
pF
97
pF
68
pF
14
Ω
16.2
21
nC
7.2
9.4
nC
3.8
nC
Gate Drain Charge
3.5
nC
Turn-On DelayTime
6.2
ns
VGS= -10V, VDS= -20V, RL=1.4Ω,
RGEN=3Ω
8.4
ns
44.8
ns
41.2
IF= -12A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF= -12A, dI/dt=100A/µs
21
ns
27
ns
nC
14
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are
based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep ST
1 2008).
Rev4: Aug 2009
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD609
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
30
30
VDS=-5V
-10V
25
-4V
-4.5V
20
-ID(A)
20
-ID (A)
25
-5V
15
VGS=-3.5V
10
15
125°C
10
5
25°C
5
0
0
0
1
2
3
4
5
1.5
-VDS (Volts)
Fig 12: On-Region Characteristics
2.5
3
3.5
4
4.5
-VGS(Volts)
Figure 13: Transfer Characteristics
1.7
65
Normalized On-Resistance
60
VGS=-4.5V
55
RDS(ON) (mΩ)
2
50
45
VGS=-10V
40
35
VGS=-10V
ID=-12A
1.5
1.3
1.1
VGS=-4.5V
ID=-8A
0.9
0.7
30
0
-50
5
10
15
20
-ID (A)
Figure 14: On-Resistance vs. Drain Current and
Gate Voltage
-25
0
25
50
75
100
125
150
Temperature (°C)
Figure 15: On-Resistance vs. Junction
Temperature
100
130
ID=-12A
10
110
-IS (A)
RDS(ON) (mΩ)
1
90
125°C
70
25°C
0.01
0.001
25°C
50
125°C
0.1
0.0001
30
0.0
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 16: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 17: Body-Diode Characteristics
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AOD609
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10
1200
Capacitance (pF)
8
-VGS (Volts)
1400
VDS=-20V
ID= -12A
6
4
Ciss
1000
800
600
Crss
400
2
Coss
200
0
0
0
3
6
9
12
15
Qg (nC)
Figure 18: Gate-Charge Characteristics
0
18
10
20
30
-VDS (Volts)
Figure 19: Capacitance Characteristics
1000
100
TJ(Max)=150°C
TA=25°C
10µs
100µs
1
RDS(ON)
limited
0.1
TJ(Max)=150°C
TA=25°C
1ms
10ms
0.1s
1s
10s
DC
Power (W)
10
-ID (Amps)
40
0.01
0.1
1
10
100
10
1
0.00001
100
0.001
0.1
10
1000
-VDS (Volts)
Pulse Width (s)
Figure 21: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 20: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 22: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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AOD609
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgs
Vds
Qgd
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
t off
t on
td(on)
Vgs
-
DUT
Vgs
t d(off)
tr
tf
90%
Vdd
VDC
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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