AOD496A 30V N-Channel MOSFET General Description Product Summary The AOD496A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. ID (at VGS=10V) VDS 30V 57A RDS(ON) (at VGS=10V) < 9mΩ RDS(ON) (at VGS = 4.5V) < 14mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D Bottom View D D S G G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Continuous Drain Current C V A 100 11 IDSM TA=70°C ±20 40 IDM TA=25°C Units V 57 ID TC=100°C Maximum 30 A 9 Avalanche Current C IAS, IAR 20 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 20 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 4: Nov 2011 2.3 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.5 TJ, TSTG Symbol t ≤ 10s W 25 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 50 PD TC=100°C -55 to 175 Typ 18 44 2.4 °C Max 22 55 3 Units °C/W °C/W °C/W Page 1 of 6 AOD496A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±20V VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 100 ±100 nA 1.75 2.2 V 7.4 9 11 13 VGS=4.5V, ID=20A 11 14 VGS=10V, ID=20A Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=20A 43 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 Gate Threshold Voltage Units V 1 VGS(th) Coss Max 30 VDS=30V, VGS=0V IGSS RDS(ON) Typ VGS=0V, VDS=15V, f=1MHz mΩ mΩ S 1 V 50 A 770 pF 240 pF 77 pF 0.8 1.6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 14.8 18 nC Qg(4.5V) Total Gate Charge 7.1 9 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 0.4 2.2 nC 3.1 nC 5 ns 3 ns 18 ns 3 ns 11 ns nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 23 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 4: Nov 2011 www.aosmd.com Page 2 of 6 AOD496A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 60 10V 6V VDS=5V 50 80 4.5V 7V 40 ID (A) 60 ID(A) 4V 30 40 20 3.5V 20 125°C 10 VGS=3.0V 25°C 0 0 0 1 2 3 4 0 5 16 2 3 4 5 Normalized On-Resistance 2 14 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 12 10 8 VGS=10V 6 4 1.8 VGS=10V ID=20A 1.6 17 5 2 10 =4.5V 1.4 1.2 VGS ID=20A 1 0.8 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 30 1.0E+02 ID=20A 1.0E+01 25 40 20 IS (A) RDS(ON) (mΩ Ω) 1.0E+00 125°C 15 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 10 1.0E-04 25°C 1.0E-05 5 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 4: Nov 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOD496A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1200 VDS=15V ID=20A 1000 8 Capacitance (pF) VGS (Volts) Ciss 6 4 2 600 Coss 400 200 0 Crss 0 0 4 8 12 Qg (nC) Figure 7: Gate-Charge Characteristics 16 0 RDS(ON) 10µs 100µs 10.0 1ms 10ms DC 1.0 TJ(Max)=175°C TC=25°C 0.1 Power (W) 10µs 100.0 30 160 TJ(Max)=175°C TC=25°C 120 17 5 2 10 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18Junction-toFigure 10: Single Pulse Power Rating Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 200 1000.0 ID (Amps) 800 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=3°C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 4: Nov 2011 www.aosmd.com Page 4 of 6 AOD496A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 TA=25°C TA=150°C 10 TA=100°C TA=125°C Power Dissipation (W) IAR (A) Peak Avalanche Current 100 50 40 30 20 10 1 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 125 150 TCASE (° °C) Figure 13: Power De-rating (Note F) 10000 60 TA=25°C 50 1000 40 Power (W) Current rating ID(A) 175 30 17 5 2 10 100 20 10 10 1 0 0 Zθ JA Normalized Transient Thermal Resistance 10 1 25 50 75 100 125 150 TCASE (° °C) Figure 14: Current De-rating (Note F) 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 0.00001 175 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=55°C/W 40 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 4: Nov 2011 www.aosmd.com Page 5 of 6 AOD496A Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 4: Nov 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6