AON7423 20V P-Channel MOSFET General Description The AON7423 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . This device is ideal for load switch and battery protection applications. Product Summary VDS ID (at VGS=-4.5V) -20V -50A RDS(ON) (at VGS=-4.5V) < 5mΩ RDS(ON) (at VGS=-2.5V) < 6.5mΩ RDS(ON) (at VGS=-1.8V) < 8.5mΩ RDS(ON) (at VGS=-1.5V) < 11mΩ 100% UIS Tested 100% Rg Tested D Top View 1 8 2 7 3 6 4 5 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C TA=25°C V A -200 -28 IDSM A -22.5 Avalanche Current C IAS, IAR 60 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 180 mJ Power Dissipation B Junction and Storage Temperature Range 6.2 Steady-State Steady-State RθJA RθJC W 4 TJ, TSTG Symbol t ≤ 10s W 33 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 PD TC=100°C TA=25°C Power Dissipation A 1/6 ±8 -39 IDM TA=70°C Units V -50 ID TC=100°C Maximum -20 -55 to 150 Typ 16 45 1.1 °C Max 20 55 1.5 Units °C/W °C/W °C/W www.freescale.net.cn AON7423 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V -20 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.2 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -200 TJ=55°C -5 nA -0.9 V 3.95 5 5.7 7.2 VGS=-2.5V, ID=-20A 4.9 6.5 VGS=-1.8V, ID=-20A 6.1 8.5 mΩ VGS=-1.5V, ID=-20A 7.7 11 mΩ A gFS Forward Transconductance VDS=-5V, ID=-20A 110 VSD Diode Forward Voltage IS=-1A,VGS=0V -0.5 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge µA ±100 TJ=125°C Coss Units -0.5 VGS=-4.5V, ID=-20A Static Drain-Source On-Resistance Max V VDS=-20V, VGS=0V IDSS RDS(ON) Typ VGS=-4.5V, VDS=-10V, ID=-20A mΩ mΩ S -1 V -50 A 5626 pF 928 pF 716 pF 3 6 70 100 Ω nC 9.2 nC Qgd Gate Drain Charge 18.4 nC tD(on) Turn-On DelayTime 18 ns tr Turn-On Rise Time 52 ns 285 ns 123 ns 78 ns nC tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=-4.5V, VDS=-10V, RL=0.5Ω, RGEN=3Ω IF=-20A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs 495 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn AON7423 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 -2.0V VDS=-5V -2.5V 80 80 -4.5V -1.5V 60 -ID(A) -ID (A) 60 40 40 125°C 25°C 20 20 VGS=-1.0V 0 0 0 1 2 3 4 0 5 10 1 1.5 2 2.5 3 8 6 4 VGS=-2.5V 2 VGS=-4.5V Normalized On-Resistance 1.8 VGS=-1.5V VGS=-1.8V RDS(ON) (mΩ Ω) 0.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=-4.5V ID=-20A 1.6 VGS=-2.5V ID=-20A 1.4 17 5 2 VGS=-1.5V 10 1.2 1 VGS=-1.8V ID=-20A ID=-20A 0.8 0 0 5 0 10 15 20 25 30 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 1.0E+01 15 ID=-20A 1.0E+00 12 40 9 125°C 6 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 3 25°C 0 1.0E-05 0.0 0 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 -IS (A) RDS(ON) (mΩ Ω) 1.0E-01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON7423 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 7000 5 VDS=-10V ID=-20A Ciss 6000 Capacitance (pF) -VGS (Volts) 4 3 2 5000 4000 3000 Coss 2000 1 1000 0 0 20 40 60 Qg (nC) Figure 7: Gate-Charge Characteristics 80 0 10µs RDS(ON) limited 10µs 20 10.0 DC 1.0 TJ(Max)=150°C TC=25°C 0.1 TJ(Max)=150°C TC=25°C 160 100µs 1ms 10ms Power (W) 100.0 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics 200 1000.0 ID (Amps) Crss 0 17 5 2 10 120 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18Junction-toFigure 10: Single Pulse Power Rating Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.5°C/W 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AON7423 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 TA=100°C TA=25°C 100 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=150°C TA=125°C 10 1 80 60 40 20 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 10000 60 TA=25°C 50 1000 40 Power (W) Current rating ID(A) 150 30 17 5 2 10 100 20 10 10 1 0 0 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) 150 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 0.00001 0.001 Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 40 RθJA=55°C/W 0.1 0.01 PD Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AON7423 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgs Vds Qgd + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 6/6 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.freescale.net.cn