SHENZHENFREESCALE AON7423

AON7423
20V P-Channel MOSFET
General Description
The AON7423 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low R DS(ON) . This device is ideal for load switch and battery protection applications.
Product Summary
VDS
ID (at VGS=-4.5V)
-20V
-50A
RDS(ON) (at VGS=-4.5V)
< 5mΩ
RDS(ON) (at VGS=-2.5V)
< 6.5mΩ
RDS(ON) (at VGS=-1.8V)
< 8.5mΩ
RDS(ON) (at VGS=-1.5V)
< 11mΩ
100% UIS Tested
100% Rg Tested
D
Top View
1
8
2
7
3
6
4
5
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
C
TA=25°C
V
A
-200
-28
IDSM
A
-22.5
Avalanche Current C
IAS, IAR
60
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
180
mJ
Power Dissipation B
Junction and Storage Temperature Range
6.2
Steady-State
Steady-State
RθJA
RθJC
W
4
TJ, TSTG
Symbol
t ≤ 10s
W
33
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
83
PD
TC=100°C
TA=25°C
Power Dissipation A
1/6
±8
-39
IDM
TA=70°C
Units
V
-50
ID
TC=100°C
Maximum
-20
-55 to 150
Typ
16
45
1.1
°C
Max
20
55
1.5
Units
°C/W
°C/W
°C/W
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AON7423
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=-250µA, VGS=0V
-20
-1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±8V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.2
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-200
TJ=55°C
-5
nA
-0.9
V
3.95
5
5.7
7.2
VGS=-2.5V, ID=-20A
4.9
6.5
VGS=-1.8V, ID=-20A
6.1
8.5
mΩ
VGS=-1.5V, ID=-20A
7.7
11
mΩ
A
gFS
Forward Transconductance
VDS=-5V, ID=-20A
110
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
-0.5
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
µA
±100
TJ=125°C
Coss
Units
-0.5
VGS=-4.5V, ID=-20A
Static Drain-Source On-Resistance
Max
V
VDS=-20V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=-4.5V, VDS=-10V, ID=-20A
mΩ
mΩ
S
-1
V
-50
A
5626
pF
928
pF
716
pF
3
6
70
100
Ω
nC
9.2
nC
Qgd
Gate Drain Charge
18.4
nC
tD(on)
Turn-On DelayTime
18
ns
tr
Turn-On Rise Time
52
ns
285
ns
123
ns
78
ns
nC
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Qrr
VGS=-4.5V, VDS=-10V, RL=0.5Ω,
RGEN=3Ω
IF=-20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs
495
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2/6
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AON7423
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
-2.0V
VDS=-5V
-2.5V
80
80
-4.5V
-1.5V
60
-ID(A)
-ID (A)
60
40
40
125°C
25°C
20
20
VGS=-1.0V
0
0
0
1
2
3
4
0
5
10
1
1.5
2
2.5
3
8
6
4
VGS=-2.5V
2
VGS=-4.5V
Normalized On-Resistance
1.8
VGS=-1.5V
VGS=-1.8V
RDS(ON) (mΩ
Ω)
0.5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=-4.5V
ID=-20A
1.6
VGS=-2.5V
ID=-20A
1.4
17
5
2
VGS=-1.5V
10
1.2
1
VGS=-1.8V
ID=-20A
ID=-20A
0.8
0
0
5
0
10
15
20
25
30
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
1.0E+01
15
ID=-20A
1.0E+00
12
40
9
125°C
6
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
3
25°C
0
1.0E-05
0.0
0
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/6
-IS (A)
RDS(ON) (mΩ
Ω)
1.0E-01
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON7423
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
7000
5
VDS=-10V
ID=-20A
Ciss
6000
Capacitance (pF)
-VGS (Volts)
4
3
2
5000
4000
3000
Coss
2000
1
1000
0
0
20
40
60
Qg (nC)
Figure 7: Gate-Charge Characteristics
80
0
10µs
RDS(ON)
limited
10µs
20
10.0
DC
1.0
TJ(Max)=150°C
TC=25°C
0.1
TJ(Max)=150°C
TC=25°C
160
100µs
1ms
10ms
Power (W)
100.0
5
10
15
-VDS (Volts)
Figure 8: Capacitance Characteristics
200
1000.0
ID (Amps)
Crss
0
17
5
2
10
120
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18Junction-toFigure 10: Single Pulse Power Rating
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.5°C/W
1
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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AON7423
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
TA=100°C
TA=25°C
100
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=150°C
TA=125°C
10
1
80
60
40
20
0
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
0
25
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
60
TA=25°C
50
1000
40
Power (W)
Current rating ID(A)
150
30
17
5
2
10
100
20
10
10
1
0
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
0.1
10 0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0.00001
0.001
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
40
RθJA=55°C/W
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
5/6
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AON7423
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgs
Vds
Qgd
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
6/6
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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