Datasheet

AON7406
30V N-Channel MOSFET
General Description
Product Summary
• The AON7406 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in SMPS and general
purpose applications.
ID (at VGS=10V)
VDS
30V
25A
RDS(ON) (at VGS=10V)
< 17mΩ
RDS(ON) (at VGS=4.5V)
Typical ESD protection
< 23mΩ
HBM Class 2
• RoHS and Halogen-Free Compliant
100% UIS Tested
100% Rg Tested
DFN 3x3A
Top View
D
Bottom View
Top View
S
S
S
G
D
D
D
D
G
S
Pin 1
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
C
V
A
50
9
IDSM
TA=70°C
±20
15
IDM
TA=25°C
Units
V
25
ID
TC=100°C
Maximum
30
A
7
Avalanche Current C
IAS, IAR
19
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
18
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev.6.0: July 2013
3.1
Steady-State
Steady-State
RθJA
RθJC
www.aosmd.com
W
2
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
W
6
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
15.5
PD
TC=100°C
Typ
30
60
6.6
°C
Max
40
75
8
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7406
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±16V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
50
TJ=55°C
10
µA
1.8
2.4
V
14
17
20
24
VGS=4.5V, ID=8A
18
23
mΩ
1
V
15
A
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=9A
40
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.75
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
VGS=10V, ID=9A
Output Capacitance
Units
V
1
Zero Gate Voltage Drain Current
Coss
Max
30
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
mΩ
S
600
740
888
pF
VGS=0V, VDS=15V, f=1MHz
77
110
145
pF
50
82
115
pF
VGS=0V, VDS=0V, f=1MHz
0.5
1.1
1.7
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
12
15
18
nC
Qg(4.5V) Total Gate Charge
6
7.5
9
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=15V, ID=9A
VGS=10V, VDS=15V, RL=1.67Ω,
RGEN=3Ω
2.5
nC
3
nC
5
ns
3.5
ns
19
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=9A, dI/dt=500A/µs
6
8
10
Qrr
Body Diode Reverse Recovery Charge IF=9A, dI/dt=500A/µs
14
18
22
3.5
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.6.0: July 2013
www.aosmd.com
Page 2 of 6
AON7406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
30
10V
4V
25
5V
20
3V
ID(A)
ID (A)
20
15
15
10
10
5
125°C
5
VGS=2.5V
25°C
0
0
0
1
2
3
4
1
5
1.5
2
2.5
3
3.5
4
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
30
Normalized On-Resistance
1.8
25
RDS(ON) (mΩ
Ω)
VDS=5V
25
VGS=4.5V
20
15
10
VGS=10V
5
1.6
VGS=10V
ID=9A
1.4
1.2
VGS=4.5V
ID=8A
1
17
5
2
10
0.8
0
0
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
40
1.0E+02
ID=9A
1.0E+01
35
40
1.0E+00
IS (A)
RDS(ON) (mΩ
Ω)
30
125°C
25
125°C
1.0E-01
1.0E-02
25°C
20
1.0E-03
15
1.0E-04
25°C
1.0E-05
10
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.6.0: July 2013
4
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON7406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1200
VDS=15V
ID=9A
1000
8
Capacitance (pF)
VGS (Volts)
Ciss
6
4
2
800
600
400
Coss
200
0
Crss
0
0
3
6
9
12
Qg (nC)
Figure 7: Gate-Charge Characteristics
15
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
200
100.0
10µs
RDS(ON)
limited
10µs
160
TJ(Max)=150°C
TC=25°C
120
17
5
2
10
100µs
1.0
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
0.1
Power (W)
ID (Amps)
10.0
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18Junction-toFigure 10: Single Pulse Power Rating
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=8°C/W
1
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.6.0: July 2013
www.aosmd.com
Page 4 of 6
AON7406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
TA=25°C
TA=100°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
100
TA=150°C
10
TA=125°C
1
16
12
8
4
0
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
0
25
50
75
100
125
TCASE (°
°C)
Figure 13: Power De-rating (Note F)
10000
30
TA=25°C
25
1000
20
Power (W)
Current rating ID(A)
150
15
17
5
2
10
100
10
10
5
1
0
0
25
50
75
100
125
TCASE (°
°C)
Figure 14: Current De-rating (Note F)
0.1
10 0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0.00001
150
0.001
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.6.0: July 2013
www.aosmd.com
Page 5 of 6
AON7406
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev.6.0: July 2013
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
www.aosmd.com
Page 6 of 6