AON7406 30V N-Channel MOSFET General Description Product Summary • The AON7406 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in SMPS and general purpose applications. ID (at VGS=10V) VDS 30V 25A RDS(ON) (at VGS=10V) < 17mΩ RDS(ON) (at VGS=4.5V) Typical ESD protection < 23mΩ HBM Class 2 • RoHS and Halogen-Free Compliant 100% UIS Tested 100% Rg Tested DFN 3x3A Top View D Bottom View Top View S S S G D D D D G S Pin 1 Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Continuous Drain Current C V A 50 9 IDSM TA=70°C ±20 15 IDM TA=25°C Units V 25 ID TC=100°C Maximum 30 A 7 Avalanche Current C IAS, IAR 19 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 18 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev.6.0: July 2013 3.1 Steady-State Steady-State RθJA RθJC www.aosmd.com W 2 -55 to 150 TJ, TSTG Symbol t ≤ 10s W 6 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 15.5 PD TC=100°C Typ 30 60 6.6 °C Max 40 75 8 Units °C/W °C/W °C/W Page 1 of 6 AON7406 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±16V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 50 TJ=55°C 10 µA 1.8 2.4 V 14 17 20 24 VGS=4.5V, ID=8A 18 23 mΩ 1 V 15 A Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=9A 40 VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 VGS=10V, ID=9A Output Capacitance Units V 1 Zero Gate Voltage Drain Current Coss Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ mΩ S 600 740 888 pF VGS=0V, VDS=15V, f=1MHz 77 110 145 pF 50 82 115 pF VGS=0V, VDS=0V, f=1MHz 0.5 1.1 1.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 12 15 18 nC Qg(4.5V) Total Gate Charge 6 7.5 9 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=15V, ID=9A VGS=10V, VDS=15V, RL=1.67Ω, RGEN=3Ω 2.5 nC 3 nC 5 ns 3.5 ns 19 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=9A, dI/dt=500A/µs 6 8 10 Qrr Body Diode Reverse Recovery Charge IF=9A, dI/dt=500A/µs 14 18 22 3.5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.6.0: July 2013 www.aosmd.com Page 2 of 6 AON7406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 10V 4V 25 5V 20 3V ID(A) ID (A) 20 15 15 10 10 5 125°C 5 VGS=2.5V 25°C 0 0 0 1 2 3 4 1 5 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 30 Normalized On-Resistance 1.8 25 RDS(ON) (mΩ Ω) VDS=5V 25 VGS=4.5V 20 15 10 VGS=10V 5 1.6 VGS=10V ID=9A 1.4 1.2 VGS=4.5V ID=8A 1 17 5 2 10 0.8 0 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 40 1.0E+02 ID=9A 1.0E+01 35 40 1.0E+00 IS (A) RDS(ON) (mΩ Ω) 30 125°C 25 125°C 1.0E-01 1.0E-02 25°C 20 1.0E-03 15 1.0E-04 25°C 1.0E-05 10 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.6.0: July 2013 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON7406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1200 VDS=15V ID=9A 1000 8 Capacitance (pF) VGS (Volts) Ciss 6 4 2 800 600 400 Coss 200 0 Crss 0 0 3 6 9 12 Qg (nC) Figure 7: Gate-Charge Characteristics 15 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 200 100.0 10µs RDS(ON) limited 10µs 160 TJ(Max)=150°C TC=25°C 120 17 5 2 10 100µs 1.0 1ms 10ms DC TJ(Max)=150°C TC=25°C 0.1 Power (W) ID (Amps) 10.0 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18Junction-toFigure 10: Single Pulse Power Rating Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=8°C/W 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.6.0: July 2013 www.aosmd.com Page 4 of 6 AON7406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 TA=25°C TA=100°C Power Dissipation (W) IAR (A) Peak Avalanche Current 100 TA=150°C 10 TA=125°C 1 16 12 8 4 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 125 TCASE (° °C) Figure 13: Power De-rating (Note F) 10000 30 TA=25°C 25 1000 20 Power (W) Current rating ID(A) 150 15 17 5 2 10 100 10 10 5 1 0 0 25 50 75 100 125 TCASE (° °C) Figure 14: Current De-rating (Note F) 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 0.00001 150 0.001 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.6.0: July 2013 www.aosmd.com Page 5 of 6 AON7406 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev.6.0: July 2013 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6