AON7244 60V N-Channel MOSFET General Description Product Summary The AON7244 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 60V 50A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 8.5mΩ RDS(ON) (at VGS = 4.5V) < 12mΩ 100% UIS Tested 100% Rg Tested Top View DFN 3.3x3.3 EP Bottom View D Top View 1 8 2 7 3 6 4 5 G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current V A 160 20 IDSM TA=70°C ±20 39 IDM TA=25°C Units V 50 ID TC=100°C C Maximum 60 A 16 Avalanche Current C IAS, IAR 40 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 80 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 0: July 2011 6.2 Steady-State Steady-State RθJA RθJC www.aosmd.com W 4 TJ, TSTG Symbol t ≤ 10s W 33 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 PD TC=100°C -55 to 150 Typ 16 45 1.1 °C Max 20 55 1.5 Units °C/W °C/W °C/W Page 1 of 6 AON7244 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 160 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=16A 100 nA 2 2.5 V 7 8.5 12 15 9 12 mΩ 1 V 50 A A gFS Forward Transconductance VDS=5V, ID=20A 100 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz µA 5 IGSS Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 60 VDS=60V, VGS=0V VGS(th) RDS(ON) Typ mΩ S 1625 2030 2435 pF 150 215 280 pF 2.5 8.5 14.5 pF 0.4 0.8 1.2 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 20 26 32 nC Qg(4.5V) Total Gate Charge 9 11.5 14 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=30V, ID=20A VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω 6.5 nC 2.5 nC 7.5 ns 2.5 ns 24.5 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 12 18 24 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 45 68 90 1.5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: July 2011 www.aosmd.com Page 2 of 6 AON7244 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V VDS=5V 4V 80 80 4.5V 60 ID(A) ID (A) 60 3.5V 40 40 20 20 VGS=3V 0 0 1 2 3 4 125°C 25°C 0 1 5 14 3 4 5 Normalized On-Resistance 2 12 RDS(ON) (mΩ Ω) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 10 8 6 VGS=10V 4 2 1.8 VGS=10V ID=20A 1.6 17 5 2 10 =4.5V 1.4 1.2 VGS ID=16A 1 0.8 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 20 1.0E+02 ID=20A 1.0E+01 1.0E+00 IS (A) 15 RDS(ON) (mΩ Ω) 40 125°C 10 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 5 25°C 1.0E-04 1.0E-05 0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: July 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON7244 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2400 VDS=30V ID=20A 2000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 1600 1200 800 Coss 400 Crss 0 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 30 0 20 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics 60 200 1000.0 RDS(ON) 100µs 10.0 1ms 10ms DC 1.0 TJ(Max)=150°C TC=25°C 0.1 TJ(Max)=150°C TC=25°C 160 10µs Power (W) 10µs 100.0 ID (Amps) 10 17 5 2 10 120 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18Junction-toFigure 10: Single Pulse Power Rating Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 40 RθJC=1.5°C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: July 2011 www.aosmd.com Page 4 of 6 AON7244 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C 100 TA=150°C TA=125°C 10 1 80 60 40 20 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 125 TCASE (° °C) Figure 13: Power De-rating (Note F) 10000 60 TA=25°C 50 1000 40 Power (W) Current rating ID(A) 150 30 100 20 10 10 1 0 0 25 50 75 100 125 TCASE (° °C) Figure 14: Current De-rating (Note F) 150 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=55°C/W 0.1 0.01 PD Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: July 2011 www.aosmd.com Page 5 of 6 AON7244 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: July 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6