Datasheet

AOD4T60P/AOI4T60P
600V,4A N-Channel MOSFET
General Description
Product Summary
• Trench Power AlphaMOS-II technology
• Low RDS(ON)
• Low Ciss and Crss
• High Current Capability
• RoHS and Halogen Free Compliant
VDS @ Tj,max
700V
IDM
16A
RDS(ON),max
< 2.1Ω
Qg,typ
8.3nC
Eoss @ 400V
1.6µJ
Applications
100% UIS Tested
100% Rg Tested
• General Lighting for LED and CCFL
• AC/DC Power supplies for Industrial, Consumer, and
Telecom
TO-252
DPAK
Top View
TO-251A
IPAK
Top View
Bottom View
D
Bottom View
D
D
G
S
S
G
D
G
S
S
D
G
G
S
AOI4T60P
AOD4T60P
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOD4T60P
AOI4T60P
TO-252
TO-251A
Tape & Reel
Tube
2500
4000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
TC=100°C
Pulsed Drain Current C
Avalanche Current C
L=1mH
Maximum
600
Units
V
±30
V
4
ID
A
2.4
IDM
16
IAR
4
A
Repetitive avalanche energy C
EAR
8
mJ
Single pulsed avalanche energy H
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25°C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
EAS
203
50
5
83
0.7
-55 to 150
mJ
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Symbol
RθJA
Maximum Case-to-sink A
RθCS
Maximum Junction-to-CaseD,F
RθJC
Rev.1.0: May 2014
V/ns
Typical
Maximum
Units
40
50
°C/W
1.25
0.5
1.5
°C/W
°C/W
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Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
600
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=150°C
700
ID=250µA, VGS=0V
0.55
VDS=600V, VGS=0V
1
10
Gate-Body leakage current
VDS=0V, VGS=±30V
VDS=5V, ID=250µA
RDS(ON)
VGS=10V, ID=2A
gFS
Forward Transconductance
VDS=40V, ID=2A
3.2
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.78
IS
ISM
±100
nA
5
V
1.75
2.1
Ω
1
V
Maximum Body-Diode Continuous Current
4
A
Maximum Body-Diode Pulsed Current C
16
A
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
related I
Crss
Effective output capacitance, time
related J
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=100V, f=1MHz
Gate Source Charge
Qgd
S
522
pF
22
pF
20
pF
32
pF
2
pF
2.9
Ω
VGS=0V, VDS=0 to 480V, f=1MHz
VGS=0V, VDS=100V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
3
µA
4.2
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Co(tr)
V/ oC
VDS=480V, TJ=125°C
Gate Threshold Voltage
Static Drain-Source On-Resistance
IGSS
VGS(th)
V
8.3
VGS=10V, VDS=480V, ID=4A
15
nC
3.4
nC
Gate Drain Charge
1.9
nC
tD(on)
Turn-On DelayTime
21
ns
tr
Turn-On Rise Time
19
ns
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=300V, ID=4A,
RG=25Ω
25
ns
tf
trr
Turn-Off Fall Time
11
ns
IF=4A,dI/dt=100A/µs,VDS=100V
309
Qrr
Body Diode Reverse Recovery Charge IF=4A,dI/dt=100A/µs,VDS=100V
2.7
ns
µC
Body Diode Reverse Recovery Time
A. The value of R qJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedance from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=2.6A, VDD=150V, RG=10Ω, Starting TJ=25°C.
I. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: May 2014
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
9
7.5
VDS=40V
10V
-55°C
10
7V
6.5V
4.5
3
ID(A)
ID (A)
6
125°C
1
6V
25°C
1.5
VGS=5.5V
0
0.1
0
5
10
15
20
25
30
2
4
VDS (Volts)
Figure 1: On-Region Characteristics
Normalized On-Resistance
4
RDS(ON) (Ω)
8
10
3
5
3
VGS=10V
2
1
2.5
0
1.5
3
4.5
6
7.5
1.5
1
0.5
0
-100
9
1E+02
1.2
1E+01
1.1
1E+00
IS (A)
1.3
0
50
100
150
200
125°C
1E-01
0.9
1E-02
0.8
1E-03
0.7
-100
-50
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1
VGS=10V
ID=2A
2
0
BVDSS (Normalized)
6
VGS(Volts)
Figure 2: Transfer Characteristics
25°C
1E-04
-50
0
50
100
150
200
TJ (°C)
Figure 5: Break Down vs. Junction Temperature
Rev.1.0: May 2014
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
15
VDS=480V
ID=4A
1000
Capacitance (pF)
VGS (Volts)
12
9
6
Ciss
100
Coss
10
3
Crss
0
1
0
3
6
9
12
15
0.1
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
100
1000
VDS (Volts)
Figure 8: Capacitance Characteristics
100
5
4
10
3
Eoss
2
10µs
RDS(ON)
limited
100µs
ID (Amps)
Eoss(uJ)
1
1
1ms
DC
10ms
0.1
1
TJ(Max)=150°C
TC=25°C
0.01
0
0
100
200
300
400
500
1
600
100
1000
VDS(Volts)
Figure 10: Maximum Forward Biased Safe Operating
Area (Note F)
VDS (Volts)
Figure 9: Coss stored Energy
90
5
75
4
Current rating ID(A)
Power Dissipation (W)
10
60
45
30
3
2
1
15
0
0
0
25
50
75
100
125
150
25
50
75
100
125
150
TCASE (°C)
Figure 12: Current De-rating (Note F)
TCASE (°C)
Figure 11: Power De-rating (Note B)
Rev.1.0: May 2014
0
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Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
500
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TA=25°C
400
600
Power (W)
Power (W)
800
400
300
200
100
200
0
0.0001
0.001
0.01
0.1
1
0
0.0001
10
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-toAmbient (Note G)
Pulse Width (s)
Figure 13: Single Pulse Power Rating Junction-toCase (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Single Pulse
0.01
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note F)
ZθJA Normalized Transient
Thermal Resistance
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.1
PD
Single Pulse
0.01
Ton
T
0.001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
Rev.1.0: May 2014
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: May 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6