SKM25GAH125D Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 39 A Tc = 80 °C 27 A 25 A ICnom ICRM SEMITRANS® 6 IGBT Modules SKM25GAH125D tpsc Tj ICRM = 2xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V 50 A -20 ... 20 V 10 µs -55 ... 150 °C Tc = 25 °C 47 A Tc = 80 °C 32 A 40 A Tj = 125 °C Inverse diode IF Tj = 150 °C IFnom Target Data Features • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x Icnom • Fast & soft inverse CAL diodes • Large clearance (10 mm) and creepage distances (20 mm) • Isolated copper baseplate using DBC Technology (Direct Copper Bonding) • UL recognized, file no. E63532 Typical Applications* • • • • VGES DC/DC – converter Brake chopper Switched reluctance motor DC – motor IFRM IFRM = 2xIFnom 80 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 410 A -40 ... 150 °C Tc = 25 °C 47 A Tc = 80 °C 32 A 40 A Tj Freewheeling diode IF Tj = 150 °C IFnom IFRM IFRM = 2xIFnom 80 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 410 A -40 ... 150 °C Tj Module It(RMS) Tterminal = 80 °C Tstg Visol AC sinus 50 Hz, t = 1 min 100 A -40 ... 125 °C 4000 V Characteristics Symbol IGBT VCE(sat) VCE0 Conditions IC = 25 A VGE = 15 V chiplevel chiplevel rCE VGE = 15 V chiplevel VGE(th) VGE=VCE, IC = 1 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V min. typ. max. Unit Tj = 25 °C 3.20 3.70 V Tj = 125 °C 3.60 4.20 V Tj = 25 °C 1.5 1.75 V Tj = 125 °C 1.7 1.95 V Tj = 25 °C 68.00 78.00 m 76.00 90.00 m 5.5 6.5 V Tj = 25 °C 0.1 0.3 mA f = 1 MHz 1.65 nF f = 1 MHz 0.25 nF f = 1 MHz Tj = 125 °C 4.5 mA 0.11 nF QG VGE = - 8 V...+ 20 V 221 nC RGint Tj = 25 °C 0.00 GAH © by SEMIKRON Rev. 1 – 05.12.2012 1 SKM25GAH125D Characteristics Symbol td(on) tr Eon td(off) tf Conditions VCC = 600 V IC = 25 A VGE = ±15 V RG on = 16 RG off = 16 Eoff SEMITRANS® 6 IGBT Modules SKM25GAH125D Target Data Rth(j-c) IRRM Features • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x Icnom • Fast & soft inverse CAL diodes • Large clearance (10 mm) and creepage distances (20 mm) • Isolated copper baseplate using DBC Technology (Direct Copper Bonding) • UL recognized, file no. E63532 Qrr Err Rth(j-c) rF • • • • IRRM DC/DC – converter Brake chopper Switched reluctance motor DC – motor chiplevel IF = 25 A VGE = ±15 V VCC = 600 V per diode Freewheeling diode VF = VEC IF = 40 A VGE = 0 V chiplevel VF0 chiplevel Typical Applications* Qrr Err Rth(j-c) typ. chiplevel max. Unit 25 Tj = 125 °C 19 ns Tj = 125 °C 3.9 mJ Tj = 125 °C 184 ns Tj = 125 °C 8 ns Tj = 125 °C 1.6 mJ per IGBT Inverse diode VF = VEC IF = 40 A VGE = 0 V chiplevel VF0 chiplevel rF min. Tj = 125 °C ns 0.56 K/W Tj = 25 °C 2.13 2.65 V Tj = 125 °C 1.94 2.46 V Tj = 25 °C 1.1 1.45 V Tj = 125 °C 0.85 1.2 V Tj = 25 °C 25.7 30.0 m Tj = 125 °C 27.1 31.4 m Tj = 125 °C A Tj = 125 °C µC Tj = 125 °C mJ 1 K/W Tj = 25 °C 2.00 2.5 V Tj = 125 °C 1.8 2.3 V Tj = 25 °C 1.1 1.45 V Tj = 125 °C 1.18 1.2 V Tj = 25 °C 22.5 30.0 m 27.1 31.4 m Tj = 125 °C IF = 25 A Tj = 125 °C di/dtoff = 2500 A/µs T = 125 °C j VGE = ±15 V Tj = 125 °C VCC = 600 V per Diode 50 A 4 µC 1.1 mJ 1 K/W 60 nH Module LCE RCC'+EE' terminal-chip Rth(c-s) per module Ms to heat sink M6 TC = 25 °C m TC = 125 °C m 4 0.05 K/W 5 Nm Mt Nm Nm w 175 g GAH 2 Rev. 1 – 05.12.2012 © by SEMIKRON SKM25GAH125D Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 6: Typ. gate charge characteristic Fig. 7: Typ. switching times vs. IC © by SEMIKRON Rev. 1 – 05.12.2012 3 SKM25GAH125D Fig. 8: Typ. switching times vs. gate resistor RG 4 Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Rev. 1 – 05.12.2012 © by SEMIKRON SKM25GAH125D SEMITRANS 6 GAH This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 1 – 05.12.2012 5