SKM25GD125D Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 39 A Tc = 80 °C 27 A 25 A ICnom ICRM SEMITRANS® 6 IGBT modules SKM25GD125D VGES tpsc Tj ICRM = 2xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V 50 A -20 ... 20 V 10 µs -55 ... 150 °C Tc = 25 °C 47 A Tc = 80 °C 32 A 40 A Tj = 125 °C Inverse diode IF Tj = 150 °C IFnom Target Data Features • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x Icnom • Fast & soft inverse CAL diodes • Large clearance (10 mm) and creepage distances (20 mm) • Isolated copper baseplate using DBC Technology (Direct Copper Bonding) • UL recognized, file no. E63532 Typical Applications* • Three phase inverters for AC motor speed control • Pulse frequencies also above 15 kHz • DC servo and robot drives IFRM IFRM = 2xIFnom 80 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 410 A -40 ... 150 °C Tj Module It(RMS) Tterminal = 80 °C Tstg Visol AC sinus 50 Hz, t = 1 min 100 A -40 ... 125 °C 4000 V Characteristics Symbol IGBT VCE(sat) VCE0 Conditions IC = 25 A VGE = 15 V chiplevel chiplevel rCE VGE = 15 V chiplevel VGE(th) VGE=VCE, IC = 1 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 20 V RGint Tj = 25 °C VCC = 600 V IC = 25 A VGE = ±15 V RG on = 16 RG off = 16 td(on) tr Eon td(off) tf Eoff Rth(j-c) min. typ. max. Unit Tj = 25 °C 3.20 3.70 V Tj = 125 °C 3.60 4.20 V Tj = 25 °C 1.5 1.75 V Tj = 125 °C 1.7 1.95 V Tj = 25 °C 68.00 78.00 m 76.00 90.00 m 5.5 6.5 V Tj = 25 °C 0.1 0.3 mA f = 1 MHz 1.65 nF f = 1 MHz 0.25 nF f = 1 MHz 0.11 nF 221 nC Tj = 125 °C 4.5 mA Tj = 125 °C 0.00 25 ns Tj = 125 °C 19 ns Tj = 125 °C 3.9 mJ Tj = 125 °C 184 ns Tj = 125 °C 8 ns Tj = 125 °C 1.6 mJ per IGBT 0.56 K/W GD © by SEMIKRON Rev. 1 – 05.12.2012 1 SKM25GD125D Characteristics Symbol Conditions Inverse diode VF = VEC IF = 40 A VGE = 0 V chiplevel VF0 chiplevel rF SEMITRANS® 6 IGBT modules SKM25GD125D Target Data IRRM Qrr Err Rth(j-c) • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x Icnom • Fast & soft inverse CAL diodes • Large clearance (10 mm) and creepage distances (20 mm) • Isolated copper baseplate using DBC Technology (Direct Copper Bonding) • UL recognized, file no. E63532 typ. max. Unit Tj = 25 °C 2.13 2.65 V Tj = 125 °C 1.94 2.46 V Tj = 25 °C 1.1 1.45 V Tj = 125 °C 0.85 1.2 V Tj = 25 °C 25.7 30.0 m 27.1 31.4 m Tj = 125 °C IF = 25 A Tj = 125 °C di/dtoff = 2500 A/µs T = 125 °C j VGE = ±15 V T j = 125 °C VCC = 600 V per diode 50 A 4 µC 1.1 mJ 1 K/W Module LCE RCC'+EE' Features chiplevel min. 60 terminal-chip Rth(c-s) per module Ms to heat sink M6 nH TC = 25 °C m TC = 125 °C m 4 0.05 K/W 5 Nm Mt Nm Nm w 175 g Typical Applications* • Three phase inverters for AC motor speed control • Pulse frequencies also above 15 kHz • DC servo and robot drives GD 2 Rev. 1 – 05.12.2012 © by SEMIKRON SKM25GD125D Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 6: Typ. gate charge characteristic Fig. 7: Typ. switching times vs. IC © by SEMIKRON Rev. 1 – 05.12.2012 3 SKM25GD125D Fig. 8: Typ. switching times vs. gate resistor RG 4 Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Rev. 1 – 05.12.2012 © by SEMIKRON SKM25GD125D SEMITRANS 6 GD This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 1 – 05.12.2012 5