datasheet

SEMiX703GAL126HDs
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 25 °C
Tj = 150 °C
1200
V
Tc = 25 °C
642
A
Tc = 80 °C
449
A
450
A
ICnom
ICRM
SEMiX® 3s
Trench IGBT Modules
SEMiX703GAL126HDs
VGES
tpsc
Tj
ICRM = 2xICnom
VCC = 600 V
VGE ≤ 20 V
VCES ≤ 1200 V
900
A
-20 ... 20
V
10
µs
-40 ... 150
°C
Tc = 25 °C
561
A
Tc = 80 °C
384
A
450
A
Tj = 125 °C
Inverse diode
IF
Tj = 150 °C
IFnom
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperatur limited to TC=125°C
max.
• Not for new design
IFRM
IFRM = 2xIFnom
900
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
2900
A
-40 ... 150
°C
Tc = 25 °C
533
A
Tc = 80 °C
367
A
450
A
Tj
Freewheeling diode
IF
Tj = 150 °C
IFnom
IFRM
IFRM = 2xIFnom
900
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
2900
A
-40 ... 150
°C
Tj
Module
It(RMS)
Tterminal = 80 °C
Tstg
Visol
AC sinus 50Hz, t = 1 min
600
A
-40 ... 125
°C
4000
V
Characteristics
Symbol
IGBT
VCE(sat)
VCE0
Conditions
IC = 450 A
VGE = 15 V
chiplevel
chiplevel
min.
typ.
max.
Unit
Tj = 25 °C
1.7
2.10
V
Tj = 125 °C
2.0
2.45
V
Tj = 25 °C
1
1.2
V
Tj = 125 °C
0.9
1.1
V
Tj = 25 °C
1.6
2.0
m
2.4
3.0
m
5.8
6.5
V
5
mA
rCE
VGE = 15 V
chiplevel
VGE(th)
VGE=VCE, IC = 18 mA
ICES
VGE = 0 V
VCE = 1200 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
Tj = 125 °C
5
Tj = 25 °C
Tj = 125 °C
mA
f = 1 MHz
32.3
nF
f = 1 MHz
1.69
nF
f = 1 MHz
1.46
nF
QG
VGE = - 8 V...+ 15 V
3600
nC
RGint
Tj = 25 °C
1.67

GAL
© by SEMIKRON
Rev. 2 – 03.07.2013
1
SEMiX703GAL126HDs
Characteristics
Symbol
td(on)
tr
Eon
td(off)
tf
Conditions
VCC = 600 V
IC = 450 A
VGE = ±15 V
RG on = 1.6 
RG off = 1.6 
Eoff
SEMiX® 3s
Trench IGBT Modules
SEMiX703GAL126HDs
Rth(j-c)
IRRM
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperatur limited to TC=125°C
max.
• Not for new design
Qrr
Err
Rth(j-c)
chiplevel
IRRM
Qrr
Err
Rth(j-c)
max.
chiplevel
Unit
310
ns
Tj = 125 °C
60
ns
Tj = 125 °C
32
mJ
Tj = 125 °C
680
ns
Tj = 125 °C
135
ns
Tj = 125 °C
68
mJ
0.061
K/W
Tj = 25 °C
1.6
1.80
V
Tj = 125 °C
1.6
1.8
V
V
Tj = 25 °C
0.9
1
1.1
Tj = 125 °C
0.7
0.8
0.9
V
Tj = 25 °C
1.1
1.3
1.6
m
1.6
1.8
2.0
m
Tj = 125 °C
IF = 450 A
Tj = 125 °C
di/dtoff = 8500 A/µs T = 125 °C
j
VGE = -15 V
Tj = 125 °C
VCC = 600 V
per diode
Freewheeling diode
VF = VEC IF = 450 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
typ.
per IGBT
Inverse diode
VF = VEC IF = 450 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
min.
Tj = 125 °C
580
A
130
µC
60
mJ
0.11
K/W
Tj = 25 °C
1.7
1.91
V
Tj = 125 °C
1.7
1.9
V
V
Tj = 25 °C
0.9
1
1.1
Tj = 125 °C
0.7
0.8
0.9
V
Tj = 25 °C
1.3
1.5
1.8
m
2.1
2.3
m
Tj = 125 °C
IF = 450 A
Tj = 125 °C
di/dtoff = 8500 A/µs T = 125 °C
j
VGE = -15 V
Tj = 125 °C
VCC = 600 V
per diode
1.8
580
A
130
µC
60
mJ
0.11
K/W
Module
LCE
RCC'+EE'
20
res., terminal-chip
Rth(c-s)
per module
Ms
to heat sink (M5)
TC = 25 °C
0.7
m
TC = 125 °C
1
m
0.04
to terminals (M6)
Mt
nH
K/W
3
5
2.5
5
Nm
Nm
Nm
w
300
g
Temperature Sensor
R100
B100/125
Tc=100°C (R25=5 k)
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
493 ± 5%

3550
±2%
K
GAL
2
Rev. 2 – 03.07.2013
© by SEMIKRON
SEMiX703GAL126HDs
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 2 – 03.07.2013
3
SEMiX703GAL126HDs
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 2 – 03.07.2013
© by SEMIKRON
SEMiX703GAL126HDs
SEMiX 3s
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 2 – 03.07.2013
5