Datasheet

AOE6930
30V Dual Asymmetric N-Channel AlphaMOS
General Description
Product Summary
Q1
Q2
• Bottom Source Technology
• Very Low RDS(ON)
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
VDS
30V
30V
ID (at VGS=10V)
22A
85A
RDS(ON) (at VGS=10V)
< 4.3mΩ < 0.83mΩ
RDS(ON) (at VGS=4.5V)
< 7.0mΩ < 1.05mΩ
Applications
100% UIS Tested
100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL
• Non-Isolated DC/DC Converters in Telecom and Industrial
DFN 5X6E
D2/S1
G2
G1
PIN1 S1/D2
S2
D1
G1
S1/D2
D1
8
1
2 Q1
Q2
S2
3
7
G2 8
G2
1 G1
2 S1/D2
D2/S1
D2/S1 7
6 D2/S1
D2/S1 6
3
D1
5
D2/S1 5
4
D1
S2
D1
D1
D1 4
D1
PIN
Bottom View
Top View
Bottom View
Top View
D2/S1
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOE6930
DFN 5x6E
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
Max Q2
30
Units
V
±20
±12
V
22
85
22
85
88
340
ID
TC=100°C
C
IDM
TA=25°C
Avalanche energy
L=0.01mH
VDS Spike
10µs
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
C
48
IAS
50
80
A
EAS
13
32
mJ
V
PD
PDSM
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case (Note)
Note: Bottom S2, D1.
60
19
VSPIKE
TA=25°C
t ≤ 10s
Steady-State
Steady-State
A
22 G
IDSM
TA=70°C
Avalanche Current C
Rev.2.0 : June 2015
Max Q1
30
36
36
24
75
9.6
30
4.1
5
2.6
3.2
A
W
W
TJ, TSTG
-55 to 150
°C
Symbol
Typ Q1 Typ Q2 Max Q1 Max Q2
23
20
30
25
45
40
60
50
4
1.25
5.2
1.65
Units
°C/W
°C/W
°C/W
RθJA
RθJC
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Page 1 of 10
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
V
1
TJ=55°C
5
1.3
VGS=10V, ID=20A
±100
nA
2.1
V
3.5
4.3
5.0
6.2
7.0
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
5.2
gFS
Forward Transconductance
VDS=5V, ID=20A
85
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current G
TJ=125°C
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
f=1MHz
0.2
µA
1.7
RDS(ON)
Coss
Units
30
VDS=30V, VGS=0V
IDSS
Max
mΩ
mΩ
S
1
V
22
A
1075
pF
480
pF
55
pF
1.0
2.0
Ω
SWITCHING PARAMETERS
Total Gate Charge
Qg(10V)
15
25
nC
Qg(4.5V)
Total Gate Charge
7
15
nC
Qgs
Gate Source Charge
2.5
nC
Qgd
Gate Drain Charge
2.5
nC
Qgs
Gate Source Charge
2.5
nC
Qgd
Gate Drain Charge
2.5
nC
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=15V, ID=20A
VGS=4.5V, VDS=15V, ID=20A
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
4.5
ns
4
ns
19
ns
3
ns
IF=20A, dI/dt=500A/µs
12.5
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
21.5
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0 : June 2015
www.aosmd.com
Page 2 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
80
VDS=5V
3.5V
60
60
4.5V
3V
ID (A)
ID (A)
10V
40
20
40
125°C
25°C
20
VGS=2.5V
0
0
0
1
2
3
4
0
5
1
3
4
5
VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
1.6
7
6
Normalized On-Resistance
VGS=4.5V
5
RDS(ON) (mΩ)
2
4
3
VGS=10V
2
1
VGS=10V
ID=20A
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
0
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature (Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
12
1.0E+01
10
1.0E+00
8
1.0E-01
IS (A)
RDS(ON) (mΩ)
ID=20A
125°C
6
125°C
1.0E-02
25°C
4
1.0E-03
25°C
2
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.2.0 : June 2015
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
VDS=15V
ID=20A
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
1000
Coss
500
2
Crss
0
0
0
5
10
15
20
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
25
30
400
TJ(Max)=150°C
TC=25°C
10µs
100.0
300
10µs
RDS(ON)
limited
100µs
1ms
10ms
1.0
0.0
0.01
200
DC
TJ(Max)=150°C
TC=25°C
0.1
Power (W)
ID (Amps)
15
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
10.0
10
100
0.1
1
10
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
100
0
0.0001 0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=5.2°C/W
1
0.1
PDM
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2.0 : June 2015
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Page 4 of 10
30
30
25
25
20
20
Current rating ID (A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10
5
15
10
0
5
0
0
25
50
75
100
125
150
0
TCASE (°C)
Figure 12: Power De-rating (Note F)
25
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=60°C/W
0.1
0.01
PDM
Single Pulse
Ton
0.001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.2.0 : June 2015
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Page 5 of 10
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250µA, VGS=0V
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±12V
Gate Threshold Voltage
VDS=VGS, ID=250µA
V
1
TJ=55°C
5
1.2
VGS=10V, ID=30A
±100
nA
1.9
V
0.65
0.83
0.95
1.2
1.05
Static Drain-Source On-Resistance
VGS=4.5V, ID=30A
0.8
gFS
Forward Transconductance
VDS=5V, ID=20A
278
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.65
IS
Maximum Body-Diode Continuous Current G
TJ=125°C
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
f=1MHz
mΩ
mΩ
S
1
V
85
A
5560
pF
1670
pF
200
pF
1.0
2.0
Ω
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
95
150
nC
Qg(4.5V)
Total Gate Charge
42
65
Qgs
Gate Source Charge
VGS=10V, VDS=15V, ID=20A
Qgd
Gate Drain Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
VGS=4.5V, VDS=15V, ID=20A
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
IF=20A, dI/dt=500A/µs
0.2
µA
1.5
RDS(ON)
Coss
Units
30
VDS=30V, VGS=0V
IDSS
Max
11.5
nC
nC
12
nC
11.5
nC
12
nC
12.5
ns
27
ns
66.5
ns
13
ns
23
ns
nC
72.5
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0 : June 2015
www.aosmd.com
Page 6 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
80
2.5V
VDS=5V
2.2V
60
4.5V
10V
ID (A)
ID (A)
60
40
2.1V
20
125°C
40
25°C
20
VGS=2V
0
0
0
1
2
3
4
0
5
1
3
4
5
VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
1.8
Normalized On-Resistance
2.0
1.5
RDS(ON) (mΩ)
2
VGS=4.5V
1.0
0.5
VGS=10V
1.6
VGS=10V
ID=20A
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
0.0
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature (Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
2
1.0E+01
ID=20A
1.0E+00
125°C
1.0E-01
125°C
IS (A)
RDS(ON) (mΩ)
1.5
1
1.0E-02
25°C
1.0E-03
0.5
25°C
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.2.0 : June 2015
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 7 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8000
VDS=15V
ID=20A
7000
Ciss
8
Capacitance (pF)
VGS (Volts)
6000
6
4
2
5000
4000
3000
Coss
2000
Crss
1000
0
0
0
20
40
60
80
100
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
500
1000.0
100.0
10
TJ(Max)=150°C
TC=25°C
10µs
10µs
RDS(ON)
limited
400
1ms
10ms
DC
1.0
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
Power (W)
ID (Amps)
100µs
10.0
300
200
100
0.1
1
10
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
100
0
0.0001 0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=1.65°C/W
1
0.1
PDM
Single Pulse
Ton
0.01
1E-05
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2.0 : June 2015
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Page 8 of 10
100
100
80
80
Current rating ID (A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
40
20
60
40
20
0
0
0
25
50
75
100
125
150
0
TCASE (°C)
Figure 12: Power De-rating (Note F)
25
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=50°C/W
0.1
PDM
0.01
Single Pulse
Ton
0.001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.2.0 : June 2015
www.aosmd.com
Page 9 of 10
Figure
A: Gate
Charge
Circuit
& Waveforms
Gate
Charge
Test Test
Circuit
& Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Figure B: Resistive
Resistive Switching
Switching Test
Test Circuit
Circuit && Waveforms
Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Figure C: Unclamped
Unclamped Inductive
Inductive Switching
Switching (UIS)
(UIS)Test
TestCircuit
Circuit&&Waveforms
Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Figure
D: Diode
Recovery
Test Circuit
& Waveforms
Diode
Recovery
Test Circuit
& Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.2.0 : June 2015
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 10 of 10