Datasheet

AON6996
30V Dual Asymmetric N-Channel MOSFET
General Description
Product Summary
Q1
30V
Q2
30V
ID (at VGS=10V)
50A
60A
RDS(ON) (at VGS=10V)
< 5.2mΩ
< 3.9mΩ
RDS(ON) (at VGS=4.5V)
< 8.6mΩ
< 5mΩ
VDS
• Trench Power αMOS Technology
• Low RDS(ON)
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Applications
100% UIS Tested
100% Rg Tested
• DC/DC Converters in Computing
• Isolated DC/DC Converters in Telecom and Industrial
Top View
DFN5X6D Punch
Top View
Bottom View
Bottom View
Q2: SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
PIN1
PIN1
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AON6996
DFN 5x6D
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
Pulsed Drain Current C
TA=25°C
Continuous Drain
Avalanche Current
±20
±12
V
50
60
IDM
C
Avalanche energy
L=0.01mH
VDS Spike
10µs
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
C
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
18
IAS
38
48
A
EAS
7
12
mJ
VSPIKE
36
36
V
21
22
8.3
8.6
3.1
3.1
2
2
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
A
23
PDSM
Junction and Storage Temperature Range
38
120
19
PD
TA=25°C
31
100
15
IDSM
TA=70°C
Rev.2.0: June 2015
Units
V
ID
TC=100°C
Current
Max Q2
30
VGS
TC=25°C
Continuous Drain
Current
Max Q1
30
RθJA
RθJC
A
W
W
-55 to 150
Typ Q1
30
50
4.6
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Typ Q2
30
50
4.4
Max Q1
40
65
6
°C
Max Q2
40
65
5.8
Units
°C/W
°C/W
°C/W
Page 1 of 10
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
V
1
TJ=55°C
5
1.4
VGS=10V, ID=20A
±100
nA
2.2
V
4.3
5.2
6.3
7.6
8.6
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
6.8
gFS
Forward Transconductance
VDS=5V, ID=20A
67
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=125°C
0.71
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
f=1MHz
0.6
µA
1.8
RDS(ON)
Coss
Units
30
VDS=30V, VGS=0V
IDSS
Max
mΩ
mΩ
S
1
V
20
A
820
pF
340
pF
40
pF
1.2
1.8
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
13
Qg(4.5V) Total Gate Charge
6.1
nC
2
nC
VGS=10V, VDS=15V, ID=20A
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
2.4
nC
tD(on)
Turn-On DelayTime
6.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
2.5
ns
IF=20A, dI/dt=500A/µs
11
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
19
ns
nC
Body Diode Reverse Recovery Time
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
16.5
ns
17
ns
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: June 2015
www.aosmd.com
Page 2 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
70
4V
60
4.5V
50
50
3.5V
10V
40
ID(A)
ID (A)
VDS=5V
60
30
20
125°C
40
30
25°C
20
VGS=3V
10
10
0
0
0
1
2
3
4
0
5
1
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
10
Normalized On-Resistance
1.8
8
RDS(ON) (mΩ)
2
VGS=4.5V
6
4
VGS=10V
2
1.6
VGS=10V
ID=20A
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
0
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
20
1.0E+01
ID=20A
1.0E+00
125°C
1.0E-01
12
IS (A)
RDS(ON) (mΩ)
16
125°C
1.0E-02
8
25°C
1.0E-03
4
1.0E-04
25°C
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.2.0: June 2015
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1200
VDS=15V
ID=20A
1000
Capacitance (pF)
VGS (Volts)
8
6
4
2
800
600
Coss
400
200
0
Crss
0
0
5
10
15
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
15
20
25
30
500
10µs
RDS(ON)
limited
10µs
100µs
1ms
10ms
DC
1.0
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
TJ(Max)=150°C
TC=25°C
400
Power (W)
100.0
10.0
5
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
ID (Amps)
Ciss
300
200
100
0.1
1
10
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
1E-05 0.0001 0.001
100
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=6°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2.0: June 2015
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Page 4 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
60
50
Current rating ID(A)
Power Dissipation (W)
20
15
10
5
40
30
20
10
0
0
0
25
50
75
100
125
150
0
25
TCASE (°C)
Figure 12: Power De-rating (Note F)
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=65°C/W
0.1
0.01
PD
Single Pulse
Ton
0.001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.2.0: June 2015
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Page 5 of 10
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=10mA, VGS=0V
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±12V
Gate Threshold Voltage
VDS=VGS, ID=250µA
V
0.5
TJ=55°C
100
1.1
VGS=10V, ID=20A
±100
nA
1.9
V
3.2
3.9
4.6
5.6
4
5
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS=5V, ID=20A
125
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.53
IS
Maximum Body-Diode Continuous Current
TJ=125°C
VGS=4.5V, ID=20A
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
f=1MHz
0.9
mA
1.5
RDS(ON)
Coss
Units
30
VDS=30V, VGS=0V
IDSS
Max
mΩ
mΩ
S
0.7
V
30
A
1350
pF
450
pF
60
pF
1.8
2.7
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
23
Qg(4.5V) Total Gate Charge
10.5
nC
4
nC
VGS=10V, VDS=15V, ID=20A
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
3
nC
tD(on)
Turn-On DelayTime
6.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
3.5
ns
IF=20A, dI/dt=500A/µs
13
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
22
ns
nC
Body Diode Reverse Recovery Time
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
2.5
ns
26
ns
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: June 2015
www.aosmd.com
Page 6 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
80
VDS=5V
3V
4.5V
60
60
125°C
2.5V
ID(A)
ID (A)
10V
40
40
25°C
20
20
VGS=2V
0
0
0
1
2
3
4
0
5
1
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
8
Normalized On-Resistance
1.8
6
RDS(ON) (mΩ)
2
VGS=4.5V
4
VGS=10V
2
1.6
VGS=10V
ID=20A
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
0
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
10
1.0E+01
ID=20A
1.0E-01
6
125°C
IS (A)
RDS(ON) (mΩ)
125°C
1.0E+00
8
25°C
1.0E-02
4
1.0E-03
25°C
2
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.2.0: June 2015
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 7 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2000
VDS=15V
ID=20A
8
Ciss
Capacitance (pF)
VGS (Volts)
1500
6
4
1000
2
Coss
500
Crss
0
0
0
5
10
15
20
25
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
RDS(ON)
limited
20
25
30
10µs
100µs
1ms
10ms
DC
1.0
300
200
100
TJ(Max)=150°C
TC=25°C
0.0
0.01
TJ(Max)=150°C
TC=25°C
400
Power (W)
ID (Amps)
10µs
0.1
ZθJC Normalized Transient
Thermal Resistance
15
500
10.0
10
10
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
100.0
5
0.1
1
10
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
1E-05 0.0001 0.001
100
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=5.8°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2.0: June 2015
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Page 8 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
80
20
Current rating ID(A)
Power Dissipation (W)
60
15
10
5
40
20
0
0
0
25
50
75
100
125
150
0
TCASE (°C)
Figure 12: Power De-rating (Note F)
25
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=65°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.2.0: June 2015
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Page 9 of 10
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.2.0: June 2015
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 10 of 10