ISL43110, ISL43111 ® Data Sheet October 2002 Low-Voltage, Single Supply, SPST, High Performance Analog Switches Features The Intersil ISL4311X are precision, high performance analog switches that are fully specified for 3.3V, 5V, and 12V operation, and feature improved leakage, Icc, and switching time specifications. • Available in SOT-23 Packaging Designed to operate from a single +2.4V to +12V supply, the low supply current (1µA Max over the temperature and voltage ranges) and low leakage currents (1nA) make these switches ideal for battery powered applications. Low RON and fast switching speeds over a wide operating supply range increase these devices usefulness in industrial equipment, portable instruments, and as input signal multiplexers for new generation, low supply voltage data converters. Some of the smallest packages are available alleviating board space limitations, and making Intersil’s newest line of low-voltage switches an ideal solution. The ISL4311X are single-pole/single-throw (SPST) switches, with the ISL43110 being normally open (NO), and the ISL43111 being normally closed (NC). TABLE 1. FEATURES AT A GLANCE ISL43110 ISL43111 1 1 Configuration NO NC 3.3V RON 15Ω 15Ω 55ns / 28ns 55ns / 28ns 3.3V tON / tOFF 11Ω 11Ω 45ns / 20ns 45ns / 20ns 7Ω 7Ω 37ns / 21ns 37ns / 21ns 5V RON 5V tON / tOFF 12V RON 12V tON / tOFF Packages • Fully Specified at 3.3V, 5V, and 12V Supplies • Single Supply Operation. . . . . . . . . . . . . . . . . +2.4V to +12V • ON Resistance (RON Max). . . . . . . . . . . . . 20Ω (V+ = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Ω (V+ = 12V) • RON Flatness . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5Ω • Charge Injection (Max) . . . . . . . . . . . . . . . . . . . . . . . . . . 10pC • Low Power Consumption (PD Max). . . . . . . . . . . . . . . .<5µW • Low Leakage Current (Max at 85oC) . 10nA (Off Leakage) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20nA (On Leakage) • Fast Switching Action - tON (Max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80ns - tOFF (Max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50ns • Minimum 2000V ESD Protection per Method 3015.7 • TTL, CMOS Compatible Applications • Battery Powered, Handheld, and Portable Equipment - Cellular/Mobile Phones, Pagers - Laptops, Notebooks, Palmtops, PDAs Table 1 summarizes the performance of this family. For similar performance ±5V supply versions, see the ISL43112/13 data sheet. Number of Switches FN6028.1 8 Ld SOIC, 5 Ld SOT-23 • Communications Systems - Radios - PBX, PABX • Test Equipment - Logic and Spectrum Analyzers - Portable Meters, DVM, DMM • Medical Equipment - Ultrasound, MRI, CAT SCAN - Electrocardiograph, Blood Analyzer • Heads-Up Displays • Audio and Video Switching Ordering Information PART NO. (BRAND) TEMP. RANGE (oC) PACKAGE PKG. NO. ISL43110IB -40 to 85 8 Ld SOIC M8.15 ISL43110IB-T -40 to 85 Tape and Reel M8.15 ISL43110IH-T (110I) -40 to 85 5 Ld SOT-23, Tape P5.064 and Reel ISL43111IB -40 to 85 8 Ld SOIC M8.15 ISL43111IB-T -40 to 85 Tape and Reel M8.15 ISL43111IH-T (111I) -40 to 85 5 Ld SOT-23, Tape P5.064 and Reel 1 • General Purpose Circuits - +3V/+5V DACs and ADCs - Sample and Hold Circuits - Digital Filters - Operational Amplifier Gain Switching Networks - High Frequency Analog Switching - High Speed Multiplexing - Integrator Reset Circuits Related Literature • Tech Brief TB363 “Guidelines for Handling and Processing Moisture Sensitive Surface Mount Devices (SMDs)” CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil and Design is a registered trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2002, All Rights Reserved ISL43110, ISL43111 Pinouts (Note 1) ISL43110 (SOIC) TOP VIEW COM 1 ISL43110 (SOT-23) TOP VIEW 8 NO N.C. 2 7 GND N.C. 3 6 IN V+ 4 5 N.C. NO N.C. 3 6 IN V+ 4 5 N.C. 5 V+ COM 1 7 GND 2 4 IN ISL43111 (SOT-23) TOP VIEW 8 NC N.C. 2 GND 3 ISL43111 (SOIC) TOP VIEW COM 1 5 V+ COM 1 NC 2 4 IN GND 3 NOTE: 1. Switches Shown for Logic “0” Input. Pin Descriptions PIN V+ Truth Table FUNCTION GND Ground Connection IN Digital Control Input COM LOGIC ISL43110 ISL43111 0 OFF ON 1 ON OFF System Power Supply Input (+2.4V to +12V) Analog Switch Common Pin NO Analog Switch Normally Open Pin NC Analog Switch Normally Closed Pin N.C. No Internal Connection 2 NOTE: Logic “0” ≤ 0.8V. Logic “1” ≥ 2.4V. ISL43110, ISL43111 Absolute Maximum Ratings Thermal Information V+ to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to15V Input Voltages IN (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to ((V+) + 0.3V) NO, NC (Note 2) . . . . . . . . . . . . . . . . . . . . . . . -0.3 to ((V+) + 0.3V) Output Voltages COM (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to ((V+) + 0.3V) Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . 20mA Peak Current NO, NC, or COM (Pulsed 1ms, 10% Duty Cycle, Max) . . . . . . . . . . . . . . . . . . . . 30mA ESD Rating (Per MIL-STD-883 Method 3015). . . . . . . . . . . . . >2kV Thermal Resistance (Typical, Note 3) θJA (oC/W) 5 Ld SOT-23 Package . . . . . . . . . . . . . . . . . . . . . . . 225 8 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . 170 Maximum Junction Temperature (Plastic Package) . . . . . . . 150oC Moisture Sensitivity (See Technical Brief TB363) All Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Level 1 Maximum Storage Temperature Range. . . . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC (Lead Tips Only) Operating Conditions Temperature Range ISL4311XIX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 2. Signals on NO, NC, COM, or IN exceeding V+ or GND are clamped by internal diodes. Limit forward diode current to maximum current ratings. 3. θJA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details. Electrical Specifications: 5V Supply Test Conditions: V+ = +4.5V to +5.5V, GND = 0V, VINH = 2.4V, VINL = 0.8V (Note 4), Unless Otherwise Specified TEMP (oC) (NOTE 5) MIN TYP Full 0 - V+ V 25 - 11 20 Ω Full - 15 25 Ω 25 - 1.5 3 Ω Full - 2.5 5 Ω 25 -1 0.01 1 nA Full -10 - 10 nA 25 -1 0.01 1 nA Full -10 - 10 nA 25 -1 0.01 1 nA Full -20 - 20 nA Input Voltage High, VINH Full 2.4 - - V Input Voltage Low, VINL Full - - 0.8 V V+ = 5.5V, VIN = 0V or V+ Full -1 - 1 µA VNO or VNC = 3V, RL = 300Ω, CL = 35pF, VIN = 0 to 3V, See Figure 1 25 - 45 80 ns Full - 50 120 ns 25 - 20 50 ns Full - 28 75 ns PARAMETER TEST CONDITIONS (NOTE 5) MAX UNITS ANALOG SWITCH CHARACTERISTICS Analog Signal Range, VANALOG ON Resistance, RON V+ = 4.5V, ICOM = 1.0mA, VCOM = 3.5V, See Figure 4 RON Flatness, RFLAT(ON) ICOM = 1.0mA, VCOM = 1V, 2V, 3V NO or NC OFF Leakage Current, INO(OFF) or INC(OFF) V+ = 5.5V, VCOM = 1V, 4.5V, VNO or VNC = 4.5V, 1V, Note 6 COM OFF Leakage Current, ICOM(OFF) V+ = 5.5V, VCOM = 4.5V, 1V, VNO or VNC = 1V, 4.5V, Note 6 COM ON Leakage Current, ICOM(ON) V+ = 5.5V, VCOM = 1V, 4.5V, or VNO or VNC = 1V, 4.5V, Note 6 DIGITAL INPUT CHARACTERISTICS Input Current, IINH, IINL DYNAMIC CHARACTERISTICS Turn-ON Time, tON Turn-OFF Time, tOFF VNO or VNC = 3V, RL = 300Ω, CL = 35pF, VIN = 0 to 3V, See Figure 1 Charge Injection, Q CL = 1.0nF, VG = 0V, RG = 0Ω, See Figure 2 25 - 2 10 pC OFF Isolation RL = 50Ω, CL = 15pF, f = 100kHz, See Figure 3 25 - >90 - dB 3 ISL43110, ISL43111 Electrical Specifications: 5V Supply Test Conditions: V+ = +4.5V to +5.5V, GND = 0V, VINH = 2.4V, VINL = 0.8V (Note 4), Unless Otherwise Specified (Continued) TEMP (oC) (NOTE 5) MIN TYP 25 - 60 - dB NO or NC OFF Capacitance, COFF f = 1MHz, VNO or VNC = VCOM = 0V, See Figure 5 25 - 15 - pF COM OFF Capacitance, CCOM(OFF) f = 1MHz, VNO or VNC = VCOM = 0V, See Figure 5 25 - 15 - pF COM ON Capacitance, CCOM(ON) f = 1MHz, VNO or VNC = VCOM = 0V, See Figure 5 25 - 40 - pF Full -1 - 1 µA PARAMETER TEST CONDITIONS Power Supply Rejection Ratio RL = 50Ω, CL = 5pF, f = 1MHz (NOTE 5) MAX UNITS POWER SUPPLY CHARACTERISTICS Positive Supply Current, I+ V+ = 5.5V, VIN = 0V or V+, Switch On or Off NOTES: 4. VIN = input voltage to perform proper function. 5. The algebraic convention, whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. 6. Leakage parameter is 100% tested at high temp, and guaranteed by correlation at 25oC. Electrical Specifications: 12V Supply Test Conditions: V+ = +10.8V to +13V, GND = 0V, VINH = 5V, VINL = 0.8V (Note 4), Unless Otherwise Specified TEMP (oC) (NOTE 5) MIN TYP Full 0 - V+ V 25 - 7 10 Ω Full - 8 15 Ω 25 - 1 3 Ω Full - 1.5 5 Ω 25 -1 - 1 nA Full -10 - 10 nA 25 -1 - 1 nA Full -10 - 10 nA 25 -1 - 1 nA Full -20 - 20 nA Input Voltage High, VINH Full 4 3 - V Input Voltage Low, VINL Full - - 0.8 V V+ = 13V, VIN = 0V or V+ Full -1 - 1 µA VNO or VNC = 10V, RL = 300Ω, CL = 35pF 25 - 37 80 ns Full - 42 120 ns 25 - 21 50 ns Full - 26 75 ns PARAMETER TEST CONDITIONS (NOTE 5) MAX UNITS ANALOG SWITCH CHARACTERISTICS Analog Signal Range, VANALOG ON Resistance, RON V+ = 10.8V, ICOM = 1.0mA, VCOM = 10V RON Flatness, RFLAT(ON) ICOM = 1.0mA, VCOM = 3V, 6V, 9V NO or NC OFF Leakage Current, INO(OFF) or INC(OFF) V+ = 13V, VCOM = 1V, 10V, VNO or VNC = 10V, 1V, Note 6 COM OFF Leakage Current, ICOM(OFF) V+ = 13V, VCOM = 10V, 1V, VNO or VNC = 1V, 10V, Note 6 COM ON Leakage Current, ICOM(ON) V+ = 13V, VCOM = 1V, 10V, or VNO or VNC = 1V, 10V, Note 6 DIGITAL INPUT CHARACTERISTICS Input Current, IINH, IINL DYNAMIC CHARACTERISTICS Turn-ON Time, tON Turn-OFF Time, tOFF VNO or VNC = 10V, RL = 300Ω, CL = 35pF Charge Injection, Q CL = 1.0nF, VG = 0V, RG = 0Ω 25 - 8 20 pC OFF Isolation RL = 50Ω, CL = 15pF, f = 100kHz 25 - >90 - dB Power Supply Rejection Ratio RL = 50Ω, CL = 5pF, f = 1MHz 25 - 67 - dB 25 - 15 - pF NO or NC OFF Capacitance, COFF f = 1MHz, VNO or VNC = VCOM = 0V 4 ISL43110, ISL43111 Electrical Specifications: 12V Supply PARAMETER Test Conditions: V+ = +10.8V to +13V, GND = 0V, VINH = 5V, VINL = 0.8V (Note 4), Unless Otherwise Specified (Continued) TEST CONDITIONS TEMP (oC) (NOTE 5) MIN TYP (NOTE 5) MAX UNITS COM OFF Capacitance, CCOM(OFF) f = 1MHz, VNO or VNC = VCOM = 0V 25 - 15 - pF COM ON Capacitance, CCOM(ON) f = 1MHz, VNO or VNC = VCOM = 0V 25 - 40 - pF Full -1 - 1 µA POWER SUPPLY CHARACTERISTICS Positive Supply Current, I+ V+ = 13V, VIN = 0V or V+, Switch On or Off Electrical Specifications: 3.3V Supply Test Conditions: V+ = +3.0V to +3.6V, GND = 0V, VINH = 2.4V, VINL = 0.8V (Note 4), Unless Otherwise Specified TEMP (oC) (NOTE 5) MIN TYP Full 0 - V+ V 25 - 15 30 Ω Full - 18 40 Ω 25 - 3 5.5 Ω Full - 4 7 Ω 25 -1 - 1 nA Full -10 - 10 nA 25 -1 - 1 nA Full -10 - 10 nA 25 -1 - 1 nA Full -20 - 20 nA Input Voltage High, VINH Full 2.4 - - V Input Voltage Low, VINL Full - - 0.8 V V+ = 3.6V, VIN = 0V or V+ Full -1 - 1 µA VNO or VNC = 1.5V, RL = 300Ω, CL = 35pF, VIN = 0 to 3V 25 - 55 100 ns Full - 70 150 ns 25 - 28 60 ns Full - 35 85 ns PARAMETER TEST CONDITIONS (NOTE 5) MAX UNITS ANALOG SWITCH CHARACTERISTICS Analog Signal Range, VANALOG ON Resistance, RON V+ = 3V, ICOM = 1.0mA, VCOM = 1.5V RON Flatness, RFLAT(ON) ICOM = 1.0mA, VCOM = 0.5V, 1V, 1.5V NO or NC OFF Leakage Current, INO(OFF) or INC(OFF) V+ = 3.6V, VCOM = 1V, 3V, VNO or VNC = 3V, 1V, Note 6 COM OFF Leakage Current, ICOM(OFF) V+ = 3.6V, VCOM = 3V, 1V, VNO or VNC = 1V, 3V, Note 6 COM ON Leakage Current, ICOM(ON) V+ = 3.6V, VCOM = 1V, 3V, or VNO or VNC = 1V, 3V, or floating, Note 6 DIGITAL INPUT CHARACTERISTICS Input Current, IINH, IINL DYNAMIC CHARACTERISTICS Turn-ON Time, tON VNO or VNC = 1.5V, RL = 300Ω, CL = 35pF, VIN = 0 to 3V Turn-OFF Time, tOFF Charge Injection, Q CL = 1.0nF, VG = 0V, RG = 0Ω 25 - 2 10 pC OFF Isolation RL = 50Ω, CL = 15pF, f = 100kHz 25 - >90 - dB Power Supply Rejection Ratio RL = 50Ω, CL = 5pF, f = 1MHz 25 - 58 - dB NO or NC OFF Capacitance, COFF f = 1MHz, VNO or VNC = VCOM = 0V 25 - 15 - pF COM OFF Capacitance, CCOM(OFF) f = 1MHz, VNO or VNC = VCOM = 0V 25 - 15 - pF COM ON Capacitance, CCOM(ON) f = 1MHz, VNO or VNC = VCOM = 0V 25 - 40 - pF Full -1 - 1 µA POWER SUPPLY CHARACTERISTICS Positive Supply Current, I+ V+ = 3.6V, VIN = 0V or V+, Switch On or Off 5 ISL43110, ISL43111 Test Circuits and Waveforms 3V or 5V LOGIC INPUT V+ tr < 20ns tf < 20ns 50% C 0V tOFF SWITCH INPUT SWITCH INPUT COM IN VOUT 90% SWITCH OUTPUT VOUT NO or NC 90% 0V LOGIC INPUT CL 35pF RL 300Ω GND tON Logic input waveform is inverted for switches that have the opposite logic sense. CL includes fixture and stray capacitance. R L -----------------------------V OUT = V (NO or NC) R + R L ( ON ) FIGURE 1B. TEST CIRCUIT FIGURE 1A. MEASUREMENT POINTS FIGURE 1. SWITCHING TIMES V+ SWITCH OUTPUT VOUT ∆VOUT RG ON ON LOGIC INPUT VOUT COM NO or NC VG OFF C GND IN CL LOGIC INPUT Q = ∆VOUT x CL FIGURE 2A. MEASUREMENT POINTS FIGURE 2B. TEST CIRCUIT FIGURE 2. CHARGE INJECTION V+ V+ C C RON = V1/1mA SIGNAL GENERATOR COM NO or NC VCOM IN 0V or V+ 1mA IN V1 COM ANALYZER GND NO or NC GND RL FIGURE 3. OFF ISOLATION TEST CIRCUIT 6 FIGURE 4. RON TEST CIRCUIT 0.8V or VINH ISL43110, ISL43111 Test Circuits and Waveforms (Continued) V+ NO or NC IN IMPEDANCE ANALYZER 0V or V+ COM GND FIGURE 5. CAPACITANCE TEST CIRCUIT Detailed Description The ISL43110 and ISL43111 analog switches offer precise switching capability from a single 2.4V to 12V supply with low on-resistance and high speed operation. The devices are especially well suited to portable battery powered equipment thanks to the low operating supply voltage (2.4V), low power consumption (5µW), low leakage currents (1nA max), and the tiny SOT-23 packaging. High frequency applications also benefit from the wide bandwidth, and the very high off isolation. Supply Sequencing And Overvoltage Protection As with any CMOS device, proper power supply sequencing is required to protect the device from excessive input currents which might permanently damage the IC. All I/O pins contain ESD protection diodes from the pin to V+ and to GND (see Figure 6). To prevent forward biasing these diodes, V+ must be applied before any input signals, and input signal voltages must remain between V+ and GND. If these conditions cannot be guaranteed, then one of the following two protection methods should be employed. Logic inputs can easily be protected by adding a 1kΩ resistor in series with the input (see Figure 6). The resistor limits the input current below the threshold that produces permanent damage, and the sub-microamp input current produces an insignificant voltage drop during normal operation. Adding a series resistor to the switch input defeats the purpose of using a low RON switch, so two small signal diodes can be added in series with the supply pins to provide overvoltage protection for all pins (see Figure 6). These additional diodes limit the analog signal from 1V below V+ to 1V above GND. The low leakage current performance is 7 unaffected by this approach, but the switch resistance may increase, especially at low supply voltages. OPTIONAL PROTECTION DIODE V+ OPTIONAL PROTECTION RESISTOR IN VNO or NC VCOM GND OPTIONAL PROTECTION DIODE FIGURE 6. OVERVOLTAGE PROTECTION Power-Supply Considerations The ISL4311X construction is typical of most CMOS analog switches, except that there are only two supply pins: V+ and GND. Unlike switches with a 13V maximum supply voltage, the ISL4311X 15V maximum supply voltage provides plenty of room for the 10% tolerance of 12V supplies, as well as room for overshoot and noise spikes. The minimum recommended supply voltage is 2.4V. It is important to note that the input signal range, switching times, and on-resistance degrade at lower supply voltages. Refer ISL43110, ISL43111 to the electrical specification tables and Typical Performance Curves for details. response is very consistent over a wide V+ range, and for varying analog signal levels. V+ and GND power the internal CMOS switches and set their analog voltage limits. These supplies also power the internal logic and level shifters. The level shifters convert the input logic levels to switched V+ and GND signals to drive the analog switch gate terminals. An OFF switch acts like a capacitor and passes higher frequencies with less attenuation, resulting in signal feedthrough from a switch’s input to its output. Off Isolation is the resistance to this feedthrough. Figure 16 details the high Off Isolation provided by this family. At 10MHz, off isolation is about 50dB in 50Ω systems, decreasing approximately 20dB per decade as frequency increases. Higher load impedances decrease Off Isolation due to the voltage divider action of the switch OFF impedance and the load impedance. This family of switches cannot be operated with bipolar supplies, because the input switching point becomes negative in this configuration. For a ±5V single SPST switch, see the ISL43112/13 data sheet. Logic-Level Thresholds This switch family is TTL compatible (0.8V and 2.4V) over a supply range of 3V to 11V, and the full temperature range (see Figure 10). At 12V the low temperature VIH level is about 2.5V. This is still below the TTL guaranteed high output minimum level of 2.8V, but noise margin is reduced. For best results with a 12V supply, use a logic family the provides a VOH greater than 3V. The digital input stages draw supply current whenever the digital input voltage is not at one of the supply rails. Driving the digital input signals from GND to V+ with a fast transition time minimizes power dissipation. High-Frequency Performance In 50Ω systems, signal response is reasonably flat to 20MHz, with a -3dB bandwidth exceeding 200MHz (see Figure 15). Figure 15 also illustrates that the frequency Leakage Considerations Reverse ESD protection diodes are internally connected between each analog-signal pin and both V+ and GND. One of these diodes conducts if any analog signal exceeds V+ or GND. Virtually all the analog leakage current comes from the ESD diodes to V+ or GND. Although the ESD diodes on a given signal pin are identical and therefore fairly well balanced, they are reverse biased differently. Each is biased by either V+ or GND and the analog signal. This means their leakages will vary as the signal varies. The difference in the two diode leakages to the V+ and GND pins constitutes the analogsignal-path leakage current. All analog leakage current flows between each pin and one of the supply terminals, not to the other switch terminal. This is why both sides of a given switch can show leakage currents of the same or opposite polarity. There is no connection between the analog-signal paths and V+ or GND. Typical Performance Curves TA = 25oC, Unless Otherwise Specified 20 25 VCOM = (V+) - 1V ICOM = 1mA 85oC 12 25oC 15 V+ = 5V 13 85oC 10 -40oC 25oC 11 85oC 9 25oC 7 -40oC 5 9 5 85oC 7 5 0 3 4 5 V+ = 3.3V -40oC 8 15 RON (Ω) RON (Ω) 20 ICOM = 1mA 16 6 7 8 V+ (V) 9 10 11 FIGURE 7. ON RESISTANCE vs SUPPLY VOLTAGE 8 12 13 3 V+ = 12V 25oC -40oC 0 2 4 6 VCOM (V) 8 10 FIGURE 8. ON RESISTANCE vs SWITCH VOLTAGE 12 ISL43110, ISL43111 Typical Performance Curves TA = 25oC, Unless Otherwise Specified (Continued) 150 3.0 V+ = 12V -40oC 2.5 100 VINH AND VINL (V) Q (pC) VINH 50 V+ = 5V V+ = 3.3V 0 85oC 25oC -40oC VINL 1.5 25oC 85oC 1.0 V+ = 12V -50 2.0 0.5 0 2 4 6 8 10 VCOM (V) 6 5 7 8 V+ (V) 9 10 11 13 VCOM = (V+) - 1V RL = 300Ω 120 12 60 VCOM = (V+) - 1V 130 4 FIGURE 10. DIGITAL SWITCHING POINT vs SUPPLY VOLTAGE FIGURE 9. CHARGE INJECTION vs SWITCH VOLTAGE 140 3 2 12 RL = 300Ω 50 110 90 tOFF (ns) tON (ns) 100 85oC 80 70 40 85oC 30 25oC 25oC 60 50 -40oC 40 30 20 2 3 4 5 6 7 V+ (V) 8 9 10 11 10 12 FIGURE 11. TURN - ON TIME vs SUPPLY VOLTAGE -40oC 2 3 4 5 6 7 V+ (V) 8 9 10 11 12 FIGURE 12. TURN - OFF TIME vs SUPPLY VOLTAGE 40 60 RL = 300Ω V+ = 3.3V RL = 300Ω V+ = 3.3V 35 50 30 tON (ns) tOFF (ns) V+ = 5V 40 V+ = 12V 30 25 V+ = 5V 20 V+ = 12V 20 10 0 15 1 2 3 4 5 6 7 8 9 10 VCOM (V) FIGURE 13. TURN - ON TIME vs SWITCH VOLTAGE 9 11 12 10 0 1 2 3 4 5 6 7 8 9 10 VCOM (V) FIGURE 14. TURN - OFF TIME vs SWITCH VOLTAGE 11 12 ISL43110, ISL43111 10 0 V+ = 3V to 13V 20 RL = 50Ω GAIN V+ = 3.3V -3 30 -6 OFF ISOLATION (dB) V+ = 12V 0 PHASE V+ = 12V PHASE (DEGREES) NORMALIZED GAIN (dB) Typical Performance Curves TA = 25oC, Unless Otherwise Specified (Continued) 20 40 V+ = 3.3V 80 RL = 50Ω VIN = 0.2VP-P to 2.5VP-P (V+ = 3.3V) VIN = 0.2VP-P to 5VP-P (V+ = 12V) 1 60 100 50 60 70 80 90 100 100 10 40 110 1k 600 10k FREQUENCY (MHz) 100k FIGURE 15. FREQUENCY RESPONSE RL = 50Ω V+ = 12V, SWITCH OFF 10 PSRR (dB) 20 V+ = 3.3V, SWITCH OFF 40 V+ = 12V, SWITCH ON 50 60 V+ = 3.3V, SWITCH ON 70 80 0.3 1 10 100 FREQUENCY (MHz) FIGURE 17. PSRR vs FREQUENCY Die Characteristics SUBSTRATE POTENTIAL (POWERED UP): GND TRANSISTOR COUNT: ISL43110: 40 ISL43111: 40 PROCESS: Si Gate CMOS 10 10M FIGURE 16. OFF ISOLATION 0 30 1M FREQUENCY (Hz) 1000 100M 500M ISL43110, ISL43111 Small Outline Plastic Packages (SOIC) M8.15 (JEDEC MS-012-AA ISSUE C) N INDEX AREA 0.25(0.010) M H 8 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE B M E INCHES -B- 1 2 SYMBOL 3 L SEATING PLANE -A- h x 45o A D -C- µa e A1 B 0.25(0.010) M C C A M B S 7. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of Publication Number 95. 8. Dimensioning and tolerancing per ANSI Y14.5M-1982. 9. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006 inch) per side. 10. Dimension “E” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per side. 11. The chamfer on the body is optional. If it is not present, a visual index feature must be located within the crosshatched area. 12. “L” is the length of terminal for soldering to a substrate. 13. “N” is the number of terminal positions. 14. Terminal numbers are shown for reference only. 15. The lead width “B”, as measured 0.36mm (0.014 inch) or greater above the seating plane, shall not exceed a maximum value of 0.61mm (0.024 inch). 16. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact. 11 MILLIMETERS MIN MAX NOTES A 0.0532 0.0688 1.35 1.75 - 0.0040 0.0098 0.10 0.25 - B 0.013 0.020 0.33 0.51 9 C 0.0075 0.0098 0.19 0.25 - D 0.1890 0.1968 4.80 5.00 3 E 0.1497 0.1574 3.80 4.00 4 0.050 BSC 1.27 BSC - H 0.2284 0.2440 5.80 6.20 - h 0.0099 0.0196 0.25 0.50 5 L 0.016 0.050 0.40 1.27 6 8o 0o N NOTES: MAX A1 e 0.10(0.004) MIN α 8 0o 8 7 8o Rev. 0 12/93 ISL43110, ISL43111 Small Outline Transistor Plastic Packages (SOT23-5) P5.064 D 5 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE e1 INCHES SYMBOL L E CL CL e E1 b CL α 0.20 (0.008) M C C CL A A2 A1 SEATING PLANE -C- MIN MAX MILLIMETERS MIN MAX NOTES A 0.036 0.057 0.90 1.45 - A1 0.000 0.0059 0.00 0.15 - A2 0.036 0.051 0.90 1.30 - b 0.0138 0.0196 0.35 0.50 - C 0.0036 0.0078 0.09 0.20 - D 0.111 0.118 2.80 3.00 3 E 0.103 0.118 2.60 3.00 - E1 0.060 0.068 1.50 1.75 3 e 0.0374 Ref 0.95 Ref - e1 0.0748 Ref 1.90 Ref - L 0.004 N α 0.023 0.10 5 0o 0.60 5 10o 0o 4, 5 6 10o 0.10 (0.004) C Rev. 0 10/98 NOTES: 17. Dimensioning and tolerances per ANSI 14.5M-1982. 18. Package conforms to EIAJ SC-74A (1992). 19. Dimensions D and E1 are exclusive of mold flash, protrusions, or gate burrs. 20. Footlength L measured at reference to seating plane. 21. “L” is the length of flat foot surface for soldering to substrate. 22. “N” is the number of terminal positions. 23. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact. All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 12