V I S H AY I N T E R T E C H N O L O G Y, I N C . Trench Field Stop IGBT and FRED Pt® Gen4 Diode The Ideal Match Trench Field Stop IGBT www.vishay.com FRED Pt® Gen4 Diode VMN-MS6997-1411 V I S H AY I N T E R T E C H N O L O G Y, I N C . New Trench IGBT and FRED Pt® Gen4 Chips • • • • • • • • • Both platforms are available as sawn or unsawn wafers Trench construction: small IGBT chips feature low VCE(on) Thin wafers: Low Rth and ohmic losses Spike-free IGBT turn-off and ultrasoft recovery diode combined for maximum performance IGBT and diodes are designed for matching operation in applications and are offered as a kit on request Trench PT devices are optimized for low switching frequencies to 1 kHz Trench FS IGBTs offer 6 µs short-circuit rating and high operating temperatures to +175 °C Feature collector current ratings from 30 A to 240 A Breakdown voltages of 600 V and 650 V for increased reliability 200 A, 600 V IGBT Chip Turn-Off VISHAY VCE BEST COMPETITOR VCE VISHAY IC BEST COMPETITOR IC 600 VCE (V) / IC (A) 500 400 300 200 100 0 0 -100 50 100 150 200 250 300 350 400 Time (ns) To learn more about our IGBT platforms visit: www.vishay.com/die-wafer/igbt/ www.vishay.com/die-wafer/fred_pt_gen4/ www.vishay.com/ref/igbtplatforms For technical questions contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000