General Information

V I S H AY I N T E R T E C H N O L O G Y, I N C .
Trench Field Stop IGBT
and
FRED Pt® Gen4 Diode
The Ideal Match
Trench Field
Stop IGBT
www.vishay.com
FRED Pt®
Gen4 Diode
VMN-MS6997-1411
V I S H AY I N T E R T E C H N O L O G Y, I N C .
New Trench IGBT and FRED Pt® Gen4 Chips
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Both platforms are available as sawn or unsawn wafers
Trench construction: small IGBT chips feature low VCE(on)
Thin wafers: Low Rth and ohmic losses
Spike-free IGBT turn-off and ultrasoft recovery diode combined for maximum performance
IGBT and diodes are designed for matching operation in applications and are offered as a kit
on request
Trench PT devices are optimized for low switching
frequencies to 1 kHz
Trench FS IGBTs offer 6 µs short-circuit rating and high
operating temperatures to +175 °C
Feature collector current ratings from 30 A to 240 A
Breakdown voltages of 600 V and 650 V for
increased reliability
200 A, 600 V IGBT Chip Turn-Off
VISHAY VCE
BEST COMPETITOR VCE
VISHAY IC
BEST COMPETITOR IC
600
VCE (V) / IC (A)
500
400
300
200
100
0
0
-100
50
100
150
200
250
300
350
400
Time (ns)
To learn more about our IGBT platforms visit:
www.vishay.com/die-wafer/igbt/
www.vishay.com/die-wafer/fred_pt_gen4/
www.vishay.com/ref/igbtplatforms
For technical questions contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC
DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000