Vishay Intertechnology, Inc. TRENCH IGBT + FRED Pt ® GEN4 DIODE CHIPS 600 V TRENCH PUNCH THROUGH IGBT Very Low VCE, Optimized for fSW Below 1 kHz, Special for TIG Welding 650 V H/U HYPERFAST GEN4 FRED Pt DIODE Ultrasoft Recovery, Low IRRM and QRR, Low VF, Polyimide Passivation, Extended 650 V Breakdown 650 V, TRENCH FIELD STOP IGBT Low VCE and Low EOFF, Short Circuit Rated, Extended 650 V Breakdown for Solar Inverters and UPS 600 V H/U HYPERFAST GEN4 FRED Pt DIODE Ultrasoft Recovery, Low IRRM and QRR, Very Low VF , Polyimide Passivation 600 V, TRENCH FIELD STOP IGBT Low VCE and Low EOFF, Short Circuit Rated, Optimized for fSW 8 kHz to 20 kHz Motor Inverters DUAL P-CHANNELS www.vishay.com V I S H AY I N T E R T E C H N O L O G Y, I N C . TRENCH IGBT + FRED Pt® GEN4 DIODE CHIPS Focus Products Trench Punch Through IGBT Chips, L-Type, 600 V, 200 A Series VS-GC200A060LC/B Technology Speed BVCES (V) ICE (A) VCE typ. (V) Operating Temperature max. (°C) Die Size X (mm) Die Size Y (mm) PT-TIGBT L 600 200 1.36 150 12.7 10.3 600 V, 200 A, trench punch through IGBT, very low VCE, low turn-off losses, easy paralleling, optimized for low conduction losses and switching frequency up to 1 kHz Trench Field Stop IGBT Chips, T-type, 600 V Series VS-GC030C060TC/B Technology Speed BVCES (V) ICE (A) VCE typ. (V) Operating Temperature max. (°C) Die Size X (mm) Die Size Y (mm) FS-TIGBT T 600 30 1.5 175 3.5 4.3 600 V, 30 A trench field stop IGBT, low VCE, low turn-off losses, short circuit rated, positive VCE temperature coefficient for easy paralleling, optimized for hard switching operation 8 kHz to 20 kHz VS-GC200C060TC/B FS-TIGBT T 600 200 1.45 175 9.8 10.3 600 V, 200 A trench field stop IGBT, low VCE, low turn-off losses, short circuit rated, positive VCE temperature coefficient for easy paralleling, optimized for hard switching operation 8 kHz to 20 kHz VS-GC240C060TC/B FS-TIGBT T 600 240 1.4 175 12.7 10.3 600 V, 240 A trench field stop IGBT, low VCE, low turn-off losses, short circuit rated, positive VCE temperature coefficient for easy paralleling, optimized for hard switching operation 8 kHz to 20 kHz Trench Field Stop IGBT Chips, T-type, 650 V Series VS-GC030C065TC/B Technology Speed BVCES (V) ICE (A) VCE typ. (V) Operating Temperature max. (°C) Die Size X (mm) Die Size Y (mm) FS-TIGBT T 650 30 1.65 175 3.5 4.3 650 V, 30 A trench field stop IGBT, low VCE, low turn-off losses, short circuit rated, positive VCE temperature coefficient for easy paralleling, optimized for hard switching operation 8 kHz to 20 kHz VS-GC200C065TC/B FS-TIGBT T 650 200 1.6 175 9.8 10.3 650 V, 200 A trench field stop IGBT, low VCE, low turn-off losses, short circuit rated, positive VCE temperature coefficient for easy paralleling, optimized for hard switching operation 8 kHz to 20 kHz VS-GC240C065TC/B FS-TIGBT T 650 240 1.55 175 12.7 10.3 650 V, 240 A trench field stop IGBT, low VCE, low turn-off losses, short circuit rated, positive VCE temperature coefficient for easy paralleling, optimized for hard switching operation 8 kHz to 20 kHz 600 V Hyperfast / Ultrafast Gen4 FRED Pt® Chips, Ultrasoft Recovery Diode Series VS-4FD081H06A6BC/RC/PC/FC Technology Speed BVCES (V) ICE (A) VCE typ. (V) Operating Temperature max. (°C) Die Size X (mm) Die Size Y (mm) FRED Pt Gen4 H 600 12 1.65 175 2.06 2.06 600 V, 12 A, hyperfast Gen4 FRED Pt technology, ultrasoft recovery, low IRRM and QRR, very low VF, polyimide passivated chip for high reliability standard VS-4FD081U06A6BC/RC/PC/FC FRED Pt Gen4 U 600 12 1.4 175 2.06 2.06 600 V, 12 A, ultrafast Gen4 FRED Pt technology, ultrasoft recovery, low IRRM and QRR, very low VF, polyimide passivated chip for high reliability standard VS-4FD121H06A6BC/RC/PC/FC FRED Pt Gen4 H 600 20 1.7 175 3.07 2.43 600 V, 20 A, hyperfast Gen4 FRED Pt technology, ultrasoft recovery, low IRRM and QRR, very low VF, polyimide passivated chip for high reliability standard VS-4FD121U06A6BC/RC/PC/FC FRED Pt Gen4 U 600 20 1.4 175 3.07 2.43 600 V, 20 A, ultrafast Gen4 FRED Pt technology, ultrasoft recovery, low IRRM and QRR, very low VF, polyimide passivated chip for high reliability standard VS-4FD156H06A6BC/RC/PC/FC FRED Pt Gen4 H 600 30 1.65 175 3.96 2.59 600 V, 30 A, hyperfast Gen4 FRED Pt technology, ultrasoft recovery, low IRRM and QRR, very low VF, polyimide passivated chip for high reliability standard VS-4FD156U06A6BC/RC/PC/FC FRED Pt Gen4 U 600 30 1.4 175 3.96 2.59 600 V, 30 A, ultrafast Gen4 FRED Pt technology, ultrasoft recovery, low IRRM and QRR, very low VF, polyimide passivated chip for high reliability standard VS-4FD198H06A6BC/RC/PC/FC FRED Pt Gen4 H 600 50 1.65 175 5.03 3.35 600 V, 50 A, hyperfast Gen4 FRED Pt technology, ultrasoft recovery, low IRRM and QRR, very low VF, polyimide passivated chip for high reliability standard THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V I S H AY I N T E R T E C H N O L O G Y, I N C . TRENCH IGBT + FRED Pt® GEN4 DIODE CHIPS Focus Products 600 V Hyperfast / Ultrafast Gen4 FRED Pt® Chips, Ultrasoft Recovery Diode (continued) Series VS-4FD198U06A6BC/RC/PC/FC Technology Speed BVCES (V) ICE (A) VCE typ. (V) Operating Temperature max. (°C) Die Size X (mm) Die Size Y (mm) U 600 50 1.4 175 5.03 3.35 FRED Pt Gen4 600 V, 50 A, ultrafast Gen4 FRED Pt technology, ultrasoft recovery, low IRRM and QRR, very low VF, polyimide passivated chip for high reliability standard VS-4FD235H06A6BC/RC/PC/FC FRED Pt Gen4 H 600 75 1.65 175 5.99 4.14 600 V, 75 A, hyperfast Gen4 FRED Pt technology, ultrasoft recovery, low IRRM and QRR, very low VF, polyimide passivated chip for high reliability standard VS-4FD235U06A6BC/RC/PC/FC FRED Pt Gen4 U 600 75 1.4 175 5.99 4.14 600 V, 75 A, ultrafast Gen4 FRED Pt technology, ultrasoft recovery, low IRRM and QRR, very low VF, polyimide passivated chip for high reliability standard VS-4FD282H06A6BC/RC/PC/FC FRED Pt Gen4 H 600 100 1.65 175 4.42 7.16 600 V, 100 A, hyperfast Gen4 FRED Pt technology, ultrasoft recovery, low IRRM and QRR, very low VF, polyimide passivated chip for high reliability standard VS-4FD282U06A6BC/RC/PC/FC FRED Pt Gen4 U 600 100 1.4 175 4.42 7.16 600 V, 100 A, ultrafast Gen4 FRED Pt technology, ultrasoft recovery, low IRRM and QRR, very low VF, polyimide passivated chip for high reliability standard VS-4FD378H06A6BC/RC/PC/FC FRED Pt Gen4 H 600 200 1.6 175 9.6 6.04 600 V, 200 A, hyperfast Gen4 FRED Pt technology, ultrasoft recovery, low IRRM and QRR, very low VF, polyimide passivated chip for high reliability standard VS-4FD378U06A6BC/RC/PC/FC FRED Pt Gen4 U 600 200 1.45 175 9.6 6.04 600 V, 200 A, ultrafast Gen4 FRED Pt technology, ultrasoft recovery, low IRRM and QRR, very low VF, polyimide passivated chip for high reliability standard VS-4FD447H06A6BC/RC/PC/FC FRED Pt Gen4 H 600 250 1.6 175 6.73 11.35 600 V, 250 A, hyperfast Gen4 FRED Pt technology, ultrasoft recovery, low IRRM and QRR, very low VF, polyimide passivated chip for high reliability standard VS-4FD447U06A6BC/RC/PC/FC FRED Pt Gen4 U 600 250 1.4 175 6.73 11.35 600 V, 250 A, ultrafast Gen4 FRED Pt technology, ultrasoft recovery, low IRRM and QRR, very low VF, polyimide passivated chip for high reliability standard 650 V Hyperfast / Ultrafast Gen4 FRED Pt® Chips, Ultrasoft Recovery Diode Series VS-4FD121H07A6BC/RC/PC/FC Technology Speed BVCES (V) ICE (A) VCE typ. (V) Operating Temperature max. (°C) Die Size X (mm) Die Size Y (mm) FRED Pt Gen4 H 650 20 1.84 175 3.07 2.43 650 V, 20 A, hyperfast Gen4 FRED Pt technology, ultrasoft recovery, low IRRM and QRR, very low VF, polyimide passivated chip for high reliability standard VS-4FD121U07A6BC/RC/PC/FC FRED Pt Gen4 U 650 20 1.48 175 3.07 2.43 650 V, 20 A, ultrafast Gen4 FRED Pt technology, ultrasoft recovery, low IRRM and QRR, very low VF, polyimide passivated chip for high reliability standard VS-4FD156H07A6BC/RC/PC/FC FRED Pt Gen4 H 650 30 1.79 175 3.96 2.59 650 V, 30 A, hyperfast Gen4 FRED Pt technology, ultrasoft recovery, low IRRM and QRR, very low VF, polyimide passivated chip for high reliability standard VS-4FD156U07A6BC/RC/PC/FC FRED Pt Gen4 U 650 30 1.48 175 3.96 2.59 650 V, 30 A, ultrafast Gen4 FRED Pt technology, ultrasoft recovery, low IRRM and QRR, very low VF, polyimide passivated chip for high reliability standard VS-4FD198H07A6BC/RC/PC/FC FRED Pt Gen4 H 600 50 1.79 175 5.03 3.35 600 V, 50 A, hyperfast Gen4 FRED Pt technology, ultrasoft recovery, low IRRM and QRR, very low VF, polyimide passivated chip for high reliability standard VS-4FD198U07A6BC/RC/PC/FC FRED Pt Gen4 U 600 50 1.48 175 5.03 3.35 600 V, 50 A, ultrafast Gen4 FRED Pt technology, ultrasoft recovery, low IRRM and QRR, very low VF, polyimide passivated chip for high reliability standard VS-4FD235H07A6BC/RC/PC/FC FRED Pt Gen4 H 600 75 1.79 175 5.99 4.14 600 V, 75 A, hyperfast Gen4 FRED Pt technology, ultrasoft recovery, low IRRM and QRR, very low VF, polyimide passivated chip for high reliability standard VS-4FD235U07A6BC/RC/PC/FC FRED Pt Gen4 U 600 75 1.48 175 5.99 4.14 600 V, 75 A, ultrafast Gen4 FRED Pt technology, ultrasoft recovery, low IRRM and QRR, very low VF, polyimide passivated chip for high reliability standard VS-4FD282H07A6BC/RC/PC/FC FRED Pt Gen4 H 650 100 1.79 175 4.42 7.16 650 V, 100 A, hyperfast Gen4 FRED Pt technology, ultrasoft recovery, low IRRM and QRR, very low VF, polyimide passivated chip for high reliability standard VS-4FD282U07A6BC/RC/PC/FC FRED Pt Gen4 U 650 100 1.48 175 4.42 7.16 650 V, 100 A, ultrafast Gen4 FRED Pt technology, ultrasoft recovery, low IRRM and QRR, very low VF, polyimide passivated chip for high reliability standard VS-4FD378H07A6BC/RC/PC/FC FRED Pt Gen4 H 650 200 1.74 175 9.6 6.04 650 V, 200 A, hyperfast Gen4 FRED Pt technology, ultrasoft recovery, low IRRM and QRR, very low VF, polyimide passivated chip for high reliability standard VS-4FD378U07A6BC/RC/PC/FC FRED Pt Gen4 U 650 200 1.53 175 9.6 6.04 650 V, 200 A, ultrafast Gen4 FRED Pt technology, ultrasoft recovery, low IRRM and QRR, very low VF, polyimide passivated chip for high reliability standard THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VISHAY TRENCH IGBT + FRED Pt® GEN4 DIODE CHIPS = THE IDEAL MATCH Advantages of Vishay Trench IGBT + FRED Pt® Gen4 Diode Chips • Trench construction: small IGBT chips feature low VCEON • Thin wafers: low Rth and ohmic losses • Spike-free IGBT turn-off and ultrasoft recovery diode combine for maximum performance • IGBTs and diodes are designed to operate together and are offered as a kit upon request For the Following Applications • • • • Single and three-phase motor drives, air conditioning UPS, solar inverters Electric vehicles and battery chargers Welding machines Efficient and low-EMI solution for motor drives Lowest losses for TIG output inverters Extended voltage margins without compromise Useful Links • IGBT landing page www.vishay.com/ref/igbtplatforms A WORLD OF SOLUTIONS VMN-MS6973-1409